| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2011: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Research Abstract |
AlInN epitaxial growth was demonstrated by a Single-pass process or a Double-pass process. By the single-pass process, pillar structure InN crystals with Al contained were obtained although the crystals randomly grew (no epitaxial relationship between the crystals and substrate). The result indicated that InN should be grown priorto the AlInN layer growth. By the double-pass process, no film formation occurred by this process. Therefore the Al-In ratios were controlled by the weight ratios of AlI3a n d I n C l3sources. Al-In ratios of the obtained AlInN film were controlled within 0 to 15 % of In in the AlInN films.
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