| Project/Area Number |
23760692
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Material processing/treatments
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
OHDAIRA Keisuke 北陸先端科学技術大学院大学, グリーンデバイス研究センター, 准教授 (40396510)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 瞬間熱処理 / 多結晶シリコン / 太陽電池 / 結晶化 / フラッシュランプアニール |
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| Research Abstract |
This research is regarding the formation of polycrystalline silicon films by flash lamp annealing (FLA), millisecond discharge from Xe lamps, of precursor amorphous silicon films formed on glass substrates for solar cell application. We aimed the establishment of a technology to suppress Si film peeling during FLA without using Cr adhesion layers, which is unfavorable for the realization of high-efficiency solar cells.
We have found that the use of glass substrates coated with textured transparent conductive oxide films results in the formation of poly-Si films without Si film peeling. This also demonstrates the possibility of realizing superstrate-type solar cells by using flash-lamp-crystallized polycrystalline silicon films.
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