Microstructure control of polycrystalline silicon ingot by the vibrating unidirectional solidification method
| Project/Area Number |
23760714
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Metal making engineering
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| Research Institution | Kyushu University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
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| Keywords | 太陽電池 / 多結晶シリコン / 双晶 / 一方向凝固 / 振動 / 超音波 / 多結晶 / シリコン / ファセット成長 |
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| Research Abstract |
Large Si crystal grains were obtained below position of an alumina protective tube which was used to apply vibration to melted Si. The vibrated samples with high-solidification rate formed large crystal grains in initial solidification area. When the solidification rate was increased over 20μm/sec, <211>, <110> and <100> direction turned into preferential growth orientations of Si, and the crystal grains grew larger in initial solidification area. By adding vibration and controlling the solidification rate, large Si crystal grains grew up toward the final solidification area.
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Report
(3 results)
Research Products
(19 results)
