| Project/Area Number |
23860011
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | University of Tsukuba |
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Principal Investigator |
TOKO Kaoru 筑波大学, 数理物質系, 助教 (30611280)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | ゲルマニウム / 太陽電池 / 結晶成長 / 大粒径ゲルマニウム薄膜 / 低温成長 / 結晶方位制御 / 環境材料 |
|---|
| Research Abstract |
In order to develop high-efficiency tandem solar cells to versatile flexible substrates, I investigated Al-inducedcrystallization (AIC) of amorphous Ge thin films on amorphous insulating substrates; the AIC has been well investigated to form large-grained Si layers on glass. I clarified the important parameters on the AIC. By controlling these parameters, I accomplished the low-temperature formation of a highly (111) oriented polycrystalline Ge with large grains. In addition, the Ge layer contained almost no extended defects, and had a good crystal quality.
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