Development of low defect density semipolar GaN substrates by hydride vapor phase epitaxy
| Project/Area Number |
23860033
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Yamaguchi University |
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Principal Investigator |
YAMANE Keisuke 山口大学, 大学院・理工学研究科, 助教 (80610815)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | ハイドライド気相成長 / 窒化ガリウム基板 / 非極性面 / 窒化物半導体基板 / 半極性面 / 転位 / 窒化ガリウム(GaN) / GaN基板 |
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| Research Abstract |
We fabricated semipolar {10-11}, {11-22} and {20-21} GaN substrates, which are expected to be possible candidates for high performance devices. We used patterned sapphire substrates (PSSs) as substrates for the hydride vapor phase epitaxy growth. It is revealed that the defect density of {10-11} GaN drastically decreased with increasing the thickness. We clarified the difference of natural separation mechanism between on conventional sapphire substrates and PSSs. Finally, it is shown by a fabrication of green LEDs that our GaN substrates can be used for device applications.
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Report
(3 results)
Research Products
(45 results)
