Research on preparation of ultra thin multilayer film consisting of L10 ordered alloy and MgO for MRAM application
| Project/Area Number |
23860047
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Chuo University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2012: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | スピンエレクトロニクス / ナノ材料 / 結晶工学 / エピタキシャル / 超格子 |
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| Research Abstract |
The formation technique of magnetic tunnel junction (MTJ) consisting of ferromagnetic L1_0ordered alloy and MgO layers is investigated for future magnetoresistive random access memory (MRAM) devices. The structure is controlled in atomic level
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Report
(3 results)
Research Products
(43 results)
