| Project/Area Number |
23860062
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Toyota National College of Technology |
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Principal Investigator |
MUROTANI Hideaki 豊田工業高等専門学校, 電気・電子システ, 助教 (20612906)
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| Project Period (FY) |
2011 – 2012
|
| Project Status |
Completed (Fiscal Year 2012)
|
| Budget Amount *help |
¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | 電気・電子材料 / 薄膜・量子構造 / 窒化物半導体 / LED / フォトルミネッセンス / 電子・電子材料 |
|---|
| Research Abstract |
The optical properties of InGaN alloy semiconductor systems have been studied by means of photoluminescence (PL) and time-resolved PL spectroscopy. On the basis of the evaluation of the internal quantum efficiency (IQE) and recombination dynamics of InGaN nanowires, the controversial issues of the estimation of IQE were clarified. Moreover, the mechanism of efficiency reduction under the higher excitation condition was discussed based on the analysis of the excitation power density dependence of IQE. It was found that the reduction of the IQE under higher excitation power density reflected the saturation of localized states by photo-generated excitons.
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