Project/Area Number |
23H01359
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Review Section |
Basic Section 19020:Thermal engineering-related
|
Research Institution | National Institute for Materials Science |
Principal Investigator |
SANG Liwen 国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, 主幹研究員 (90598038)
|
Project Period (FY) |
2023-04-01 – 2027-03-31
|
Project Status |
Granted (Fiscal Year 2023)
|
Budget Amount *help |
¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
Fiscal Year 2023: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
|
Keywords | thermal management / GaN / phonon |
Outline of Research at the Start |
The control of the heat conduction through manipulation of phonons has not been exploited in the wide-band gap semiconductors. The purpose of this research is to achieve the effective thermal dissipation in GaN devices through coherent phonon heat conduction by using superlattices phononic crystals.
|