| Project/Area Number |
23K03941
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 21050:Electric and electronic materials-related
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| Research Institution | Toyohashi University of Technology |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
石川 靖彦 豊橋技術科学大学, 工学(系)研究科(研究院), 教授 (60303541)
山根 啓輔 豊橋技術科学大学, 工学(系)研究科(研究院), 准教授 (80610815)
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| Project Period (FY) |
2023-04-01 – 2026-03-31
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| Project Status |
Granted (Fiscal Year 2023)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2025: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2024: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2023: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Keywords | Nitride materials / Silicon Photonics / Nonlinear Optics / Reactive Sputtering / Group-IV Nitride / Nonlinear Material |
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| Outline of Research at the Start |
Novel group-IV nitrides, “GeNx and SnNx”, are investigated, for the first time, as a potential second/third-order nonlinear optical device material in Si photonics toward on-chip optical intensity modulation and wavelength conversion.
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| Outline of Annual Research Achievements |
In the first part of the project, we focused on the fabrication of the germanium nitride samples by RF sputtering. By x-ray diffraction and scanning electron microscopy and ellipsometry we have characterized the samples and observed the influence of the Sputtering power in the crystallographic quality of the samples. Particularly we observed a poor incorporation of the Nitrogen atoms at larger power values compared with Aluminum Nitride and Silicon Nitride, in order to solve this problem, we have changed the deposition conditions including the sputtering power and the germanium nitrogen rate deposition. With this we successfully achieved Germanium Nitride samples for 100 watts power.
Preliminary results of the optical characterization related to the band gap energy look promising.
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| Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
In this project we have faced some unexpected difficulties in the preparation of the Germanium Nitride samples. From previous experience the Aluminum Nitride and Silicon Nitride deposition conditions are more flexible than the ones for successful Germanium Nitride within our equipment. From this we required a larger number of experiments focused on the growth deposition of Germanium Nitride. The first year of the project was expected to focus in the Germanium Nitride deposition which is going right on schedule.
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| Strategy for Future Research Activity |
There are some depositions conditions that we are investigating in order to improve our results. We have studied low sputtering power conditions, but we are researching the lowest possible that the equipment is able to provide as the Argon Nitrogen rate.
The next part is the complete optical characterization which has already started.
For the last year of the research well continue with the etching procedure of the germanium nitride, considering similar material as aluminum nitride we had planned the etching conditions since there is not many information available for our material, and with this the fabrication of the optical ring resonator.
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