Improving the output current of boron-doped diamond MOSFETs

Research Project

Project/Area Number	23K03966
Research Category	Grant-in-Aid for Scientific Research (C)
Allocation Type	Multi-year Fund
Section	一般
Review Section	Basic Section 21060:Electron device and electronic equipment-related
Research Institution	National Institute for Materials Science
Principal Investigator	劉江偉国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主幹研究員 (30732119)
Project Period (FY)	2023-04-01 – 2026-03-31
Project Status	Granted (Fiscal Year 2023)
Budget Amount *help	¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000) Fiscal Year 2025: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000) Fiscal Year 2024: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000) Fiscal Year 2023: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Keywords	ダイヤモンド / MOSFET
Outline of Research at the Start	Our research focuses on advancing the development of diamond-based electronic devices for high-voltage, high-temperature, and harsh-environment applications. The applicant will try to resolve the low output current problem in boron-doped diamond metal-oxide-semiconductor field-effect transistors.