| Project/Area Number |
23K04902
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Review Section |
Basic Section 36020:Energy-related chemistry
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| Research Institution | Hokkaido University |
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Principal Investigator |
石 旭 北海道大学, 創成研究機構, 准教授 (20749113)
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| Project Period (FY) |
2023-04-01 – 2026-03-31
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| Project Status |
Granted (Fiscal Year 2023)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2025: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2024: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2023: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | Plasmon / Nickel oxide / Photochemical reduction / Transient absorption / Modal strong Coupling / Carbon dioxide reduction |
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| Outline of Research at the Start |
Based on the strong coupling photoelectrode, the applicant proposes to employ a p-type semiconductor to develop a photocathode under the modal strong coupling conditions for efficient photochemical reaction, such as carbon dioxide reduction and investigate the dynamics of plasmon-induced hot-holes in the p-type semiconductor using a femtosecond laser pump-probe transient spectroscopy.
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| Outline of Annual Research Achievements |
In the past year, to develop a photoelectrochemical reduction system using p-type semiconductor, we have successfully developed the fabrication process to deposit NiO thin film by sputtering. We found that the valency of the Ni in the NiO thin film could be controlled by the O2 partial pressure during the spurring process. Besides, we also demonstrated that the crystallinity of the NiO thin film could be improved by annealing posttreatments.
To measure the photoelectrochemical properties of the p-type NiO electrode, we designed and ordered a custom-made photoelectrochemical reaction cell. We will use it to evaluate and optimize the performance of the NiO photoelectrodes.
For the mechanism study, we improved the optical set up of the transient absorption system using femtosecond laser pulses.
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| Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
In the first financial year, we were mainly planning to establish the basis of the research. This year, we have successfully developed the fabrication process of the p-type semiconductor, designed, and made a photoelectrochemical reaction cell, improved the optical set up of the femtosecond transient absorption measurement system.
A foundation study on optimizing the p-type semiconductor thin film fabrication process have been carried out, and we have smoothly obtained valuable information of the fabrication process.
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| Strategy for Future Research Activity |
In the second financial year, I am planning to load metal nanoparticles, such Au NP, Au-Cu alloy NPs, on the NiO p-type semiconductors and measure their photoelectrochemical properties. It will be important to optimize the ratio of the Au-Cu alloy for the selected photoreduction reactions. On the other hand, I will employ this optimized metal nanoparticle loaded NiO substrate for the transient measurements to figure out the dynamics of the photon-excited carriers to further study the underlying mechanisms.
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