窒化物超格子フォノニック結晶による室温熱輸送制御

• Project/Area Number: 23K26054
• Project/Area Number (Other): 23H01359 (2023)
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Multi-year Fund (2024); Single-year Grants (2023)
• Section: 一般
• Review Section: Basic Section 19020:Thermal engineering-related
• Research Institution: National Institute for Materials Science
• Principal Investigator: SANG Liwen 国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, 主幹研究員 (90598038)
• Co-Investigator(Kenkyū-buntansha): 角谷 正友 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主席研究員 (20293607)
• Project Period (FY): 2023-04-01 – 2027-03-31
• Project Status: Granted (Fiscal Year 2024)
• Budget Amount: ¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000); Fiscal Year 2026: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000); Fiscal Year 2025: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000); Fiscal Year 2024: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000); Fiscal Year 2023: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
• Keywords: 熱輸送 / thermal management / GaN / phonon

Outline of Research at the Start

The control of the heat conduction through manipulation of phonons has not been exploited in the wide-band gap semiconductors. The purpose of this research is to achieve the effective thermal dissipation in GaN high-power and RF devices by using superlattices phononic crystals.