| Project/Area Number |
24000013
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| Research Category |
Grant-in-Aid for Specially Promoted Research
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
Engineering
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| Research Institution | Sophia University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
OHTSUKI Tomi 上智大学, 理工学部, 教授 (50201976)
SEKIGUCHI Hiroto 豊橋技術科学大学, 工学研究科, 准教授 (00580599)
KOUNO Tetsuya 静岡大学, 工学部, 助教 (20612089)
EMA Kazuhiro 上智大学, 理工学部, 教授 (40194021)
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| Co-Investigator(Renkei-kenkyūsha) |
KIKUCHI Akihiko 上智大学, 理工学部, 教授 (90266073)
NAKAOKA Toshihiro 上智大学, 理工学部, 准教授 (20345143)
NOMURA Ichirou 上智大学, 理工学部, 教授 (00266074)
SEKINE Tomoyuki 上智大学, 理工学部, 名誉教授 (60110722)
OTO Kenichi 千葉大学, 大学院理学研究科, 教授 (30263198)
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| Project Period (FY) |
2012 – 2016
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥538,850,000 (Direct Cost: ¥414,500,000、Indirect Cost: ¥124,350,000)
Fiscal Year 2016: ¥74,750,000 (Direct Cost: ¥57,500,000、Indirect Cost: ¥17,250,000)
Fiscal Year 2015: ¥74,750,000 (Direct Cost: ¥57,500,000、Indirect Cost: ¥17,250,000)
Fiscal Year 2014: ¥75,400,000 (Direct Cost: ¥58,000,000、Indirect Cost: ¥17,400,000)
Fiscal Year 2013: ¥115,700,000 (Direct Cost: ¥89,000,000、Indirect Cost: ¥26,700,000)
Fiscal Year 2012: ¥198,250,000 (Direct Cost: ¥152,500,000、Indirect Cost: ¥45,750,000)
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| Keywords | 窒化物半導体 / ナノコラム / 三原色 / LED / フォトニック結晶 / 超細線 / ランダムレーザ / 選択成長 / 超細線化 / マイクロ・ナノデバイス / 光物性 / 半導体超微細化 / 量子ドット / 超格子 |
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| Outline of Final Research Achievements |
GaN nanocolumns are one-dimensional nanocrystals, which had been discovered by the leader of this project. In this project, we have improved the method for selective area growth of the nanocolumns, resulting in the successful fabrication of densely packed, ordered fine-nanocolumn arrays with a nanocolumn diameter of 26 nm. Using this method, nanocolumn arrays with various nanocolumn diameters were prepared on the same substrate, following which we investigated various nanocrystal effects such as dislocation filtering, strain relaxation, and In compositional fluctuation suppression as a function of the diameter. Single photon emission characteristics were obtained based on the quantum dot effect observed in InGaN nanocolumns. The nanocrystal effects contribute to the improvement of the emission properties of the nanocolumns, and we observed an internal quantum efficiency of over 20% in the 600-nm-wavelength red-emission range of the nanocolumns. We developed the selective area growth of the InGaN nanocolumns on the Si substrates, and established the flip-chip process of nanocolumn LEDs, which paved the way for the development of high-density two-dimensional LED arrays. Multicolor-emission integrated nanocolumn LEDs were also fabricated; the high-density integration of the microscopic emission area (10×10 μm^2) nanocolumn arrays was performed by controlling their emission colors from blue to red, resulting in white-colored LED operation. Nanocolumn LEDs with a high directional radiation beam was demonstrated using the nanocolumn photonic crystal effect. The nanocolumn system was fabricated changing the nanocolumn diameter one-dimensionally along the in-plane direction. The random lasing occurred for the nanocolumn system, providing a broad lasing spectrum, which is suitable for speckle reduction. The nanocolumn-based technologies developed in this study will contribute to the fabrication of next-generation displays with low power consumption.
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| Assessment Rating |
Verification Result (Rating)
A-
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Assessment Rating |
Result (Rating)
A: Progress in the research is steadily towards the initial goal. Expected research results are expected.
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