| Budget Amount *help |
¥218,140,000 (Direct Cost: ¥167,800,000、Indirect Cost: ¥50,340,000)
Fiscal Year 2016: ¥28,600,000 (Direct Cost: ¥22,000,000、Indirect Cost: ¥6,600,000)
Fiscal Year 2015: ¥28,860,000 (Direct Cost: ¥22,200,000、Indirect Cost: ¥6,660,000)
Fiscal Year 2014: ¥28,990,000 (Direct Cost: ¥22,300,000、Indirect Cost: ¥6,690,000)
Fiscal Year 2013: ¥31,980,000 (Direct Cost: ¥24,600,000、Indirect Cost: ¥7,380,000)
Fiscal Year 2012: ¥99,710,000 (Direct Cost: ¥76,700,000、Indirect Cost: ¥23,010,000)
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| Outline of Final Research Achievements |
This research is aimed at controlling two-dimensional electrons accumulated at oxide polar interfaces and developing new quantum conduction functions. By accumulating a small amount of electrons at ZnO polar interface, We have achieved very high electron mobility over one million cm2/Vs and observed new even-demoninator fractional quantum Hall states of ν=3/2. Quantum scattering time of this system is now as high as in the top-quality GaAs two-dimensional gas. By accumulating a large amount of electrons at interfaces between ferroelectric titanate films and ionic liquids, we have demonstrated novel transistor operation with ferroelectric channel materials.
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