| Project/Area Number |
24226005
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| Research Category |
Grant-in-Aid for Scientific Research (S)
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| Allocation Type | Single-year Grants |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Kyushu University |
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Principal Investigator |
DOI Toshiro 九州大学, 産学連携センター, 特任教授 (30207675)
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| Co-Investigator(Kenkyū-buntansha) |
SANO Yasuhisa 大阪大学, 大学院工学研究科, 准教授 (40252598)
KUROKAWA Syuhei 九州大学, 大学院工学研究院, 教授 (90243899)
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| Co-Investigator(Renkei-kenkyūsha) |
OHNISHI Osamu 宮崎大学, 工学教育研究部, 准教授 (50315107)
UNEDA Michio 金沢工業大学, 工学部, 教授 (00298324)
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| Research Collaborator |
AIDA Hideo 並木精密宝石(株), NJC研究所, 所長
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| Project Period (FY) |
2012-05-31 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥215,280,000 (Direct Cost: ¥165,600,000、Indirect Cost: ¥49,680,000)
Fiscal Year 2015: ¥26,910,000 (Direct Cost: ¥20,700,000、Indirect Cost: ¥6,210,000)
Fiscal Year 2014: ¥26,910,000 (Direct Cost: ¥20,700,000、Indirect Cost: ¥6,210,000)
Fiscal Year 2013: ¥92,430,000 (Direct Cost: ¥71,100,000、Indirect Cost: ¥21,330,000)
Fiscal Year 2012: ¥69,030,000 (Direct Cost: ¥53,100,000、Indirect Cost: ¥15,930,000)
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| Keywords | プラズマ融合CMP / 加工効率 / 表面粗さ / 難加工材料 / フェムト秒レーザ / CMP / P-CVM / 疑似ラジカル場 / 超難加工材料 / 疑似ラジカル / 加工レート / 超難加工結晶 / 融合加工装置 / フェムト秒(Fs)レーザ / SiC, GaN, ﾀﾞｲﾔﾓﾝﾄﾞ / 超押し込み実験 / TEM / PCVM / SiC, GaN, ダイヤモンド / 超押し込み試験 |
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| Outline of Final Research Achievements |
In order to establish the high-efficient ultra-precision polishing process of super hard materials such as diamond, GaN, SiC and so on for green-device application, we have proposed two unique process technologies; 1) the pre-process under the addition of quasi-radical field, and 2) the Plasma fusion CMP technology which is quite unique and first in the world.
1) We have shown the following polishing mechanism. By femto-second laser radiation the ultra-thin crystal surface layer becomes amorphous and changes to the minute ripple structure. The surface structure change facilitates surface oxidation during CMP process and causes removal rate increase.
2) We have designed and made the two types of Plasma-fusion CMP machine which can realize the above polishing mechanism; basic type "A" and challenging type "B". Using those machines we have polished the diamond surface. The polished surface was proved to have quite suitable quality for epitaxial growth of semiconductor device application.
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| Assessment Rating |
Verification Result (Rating)
A
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Assessment Rating |
Result (Rating)
A-: Progress in the research is steadily towards the initial goal. However, further efforts are necessary as a part of the research progress is delayed.
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