• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Development of bright red light-emitting devices by elucidation and control of light-emitting mechanism in rare-earth-doped nitride semiconductors

Research Project

Project/Area Number 24226009
Research Category

Grant-in-Aid for Scientific Research (S)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionOsaka University

Principal Investigator

FUJIWARA Yasufumi  大阪大学, 工学研究科, 教授 (10181421)

Co-Investigator(Kenkyū-buntansha) 吉田 博  大阪大学, 基礎工学研究科, 教授 (30133929)
小泉 淳  大阪大学, 工学(系)研究科(研究院), 助教 (30418735)
児島 貴徳  大阪大学, 工学(系)研究科(研究院), 助教 (70725100)
寺井 慶和  九州工業大学, 情報工学研究院, 教授 (90360049)
Project Period (FY) 2012-05-31 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥212,680,000 (Direct Cost: ¥163,600,000、Indirect Cost: ¥49,080,000)
Fiscal Year 2016: ¥22,620,000 (Direct Cost: ¥17,400,000、Indirect Cost: ¥5,220,000)
Fiscal Year 2015: ¥45,890,000 (Direct Cost: ¥35,300,000、Indirect Cost: ¥10,590,000)
Fiscal Year 2014: ¥42,640,000 (Direct Cost: ¥32,800,000、Indirect Cost: ¥9,840,000)
Fiscal Year 2013: ¥49,660,000 (Direct Cost: ¥38,200,000、Indirect Cost: ¥11,460,000)
Fiscal Year 2012: ¥51,870,000 (Direct Cost: ¥39,900,000、Indirect Cost: ¥11,970,000)
Keywords電気・電子材料 / 薄膜 / 希土類元素 / 発光機能制御 / 発光ダイオード / エネルギー伝達機構 / 局所構造 / オプトロニクス / エネルギー輸送機構
Outline of Final Research Achievements

We succeeded in the development of a novel red light-emitting diode (LED) using Eu-doped GaN. The red emission is due to the intra-4f shell transitions of Eu3+ ions, which is different in a conventional red LED using AlGaInP/GaAs. In this study, in collaboration with computational materials design, we elucidated and controlled light-emitting mechanism of Eu ions through the GaN host for bright red emission. Energy transfer efficiency to Eu ions from the GaN host has been optimized by purposeful engineering of local structures around Eu ions. The coexistence of donor- and acceptor-like impurities/defects in the vicinity of Eu ions made the energy transfer drastically effective. Furthermore, the Eu emission was greatly enhanced in nanostructures. Based on these findings, we were able to prepare an optimized bright LED with the nanostructure as an active layer, with the world record light output power of over 1 mW. Our LED is now ready for wide-scale industrial implementation.

Assessment Rating
Verification Result (Rating)

A

Assessment Rating
Result (Rating)

A: Progress in the research is steadily towards the initial goal. Expected research results are expected.

Report

(9 results)
  • 2017 Research Progress Assessment (Verification Result) ( PDF )
  • 2016 Annual Research Report   Final Research Report ( PDF )
  • 2015 Annual Research Report   Abstract(Research Progress Assessment) ( PDF )   Research Progress Assessment (Result) ( PDF )
  • 2014 Annual Research Report
  • 2013 Annual Research Report
  • 2012 Annual Research Report
  • Research Products

    (118 results)

All 2017 2016 2015 2014 2013 2012 Other

All Int'l Joint Research (5 results) Journal Article (47 results) (of which Int'l Joint Research: 14 results,  Peer Reviewed: 47 results,  Open Access: 7 results,  Acknowledgement Compliant: 24 results) Presentation (52 results) (of which Int'l Joint Research: 17 results,  Invited: 52 results) Book (3 results) Remarks (7 results) Patent(Industrial Property Rights) (4 results)

  • [Int'l Joint Research] Lehigh University/West Chester University/Ohio University(米国)

    • Related Report
      2016 Annual Research Report
  • [Int'l Joint Research] University of Amsterdam(オランダ)

    • Related Report
      2016 Annual Research Report
  • [Int'l Joint Research] Lehigh University/University of Mount Union(米国)

    • Related Report
      2015 Annual Research Report
  • [Int'l Joint Research] University of Amsterdam(オランダ)

    • Related Report
      2015 Annual Research Report
  • [Int'l Joint Research] University of Technology Sydney(オーストラリア)

    • Related Report
      2015 Annual Research Report
  • [Journal Article] Detection of In segregation in InGaN by using Eu as a probe2017

    • Author(s)
      J. Takatsu, B. Mitchell, A. Koizumi, S. Yamanaka, M. Matsuda, T. Gregorkiewicz, T. Kojima, and Y. Fujiwara
    • Journal Title

      Journal of Crystal Growth

      Volume: 470 Pages: 831-834

    • DOI

      10.1016/j.jcrysgro.2016.12.101

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Surface morphology and optical properties of Eu3+ ions incorporated into N-polar GaN grown by organometallic vapor phase epitaxy2017

    • Author(s)
      R. Fuji, B. Mitchell, A. Koizumi, T. Inaba, and Y. Fujiwara
    • Journal Title

      Journal of Crystal Growth

      Volume: 470 Pages: 862-865

    • DOI

      10.1016/j.jcrysgro.2017.01.015

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Emission enhancement and its mechanism of Eu-doped GaN by strain engineering2017

    • Author(s)
      T. Inaba, B. Mitchell, A. Koizumi, and Y. Fujiwara
    • Journal Title

      Optical Materials Express

      Volume: 7 Issue: 4 Pages: 1381-1387

    • DOI

      10.1364/ome.7.001381

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] High-power Eu-doped GaN red LED based on a multilayer structure grown at lower temperatures by organometallic vapor phase epitaxy2017

    • Author(s)
      W. Zhu, B. Mitchell, D. Timmerman, A. Koizumi, T. Gregorkiewicz, and Y. Fujiwara
    • Journal Title

      MRS Advances

      Volume: 2 Issue: 3 Pages: 159-164

    • DOI

      10.1557/adv.2017.67

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Synthesis and Characterization of a Novel Liquid Eu Precursor EuCppm2 Allowing for the Control of the Eu Oxidation State Ratio in GaN Thin Films Grown by OMVPE2017

    • Author(s)
      B. Mitchell, A. Koizumi, T. Nunokawa, Y. Kuboshima, T. Mogi, S. Higashi, K. Kikukawa, H. Ofuchi, T. Honma, and Y. Fujiwara
    • Journal Title

      Materials Chemistry and Physics

      Volume: 193 Pages: 140-146

    • DOI

      10.1016/j.matchemphys.2017.02.021

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity2016

    • Author(s)
      T. Inaba, D. Lee, R. Wakamatsu, T. Kojima, B. Mitchell, A. Capretti, T. Gregorkiewicz, A.Koizumi, and Y. Fujiwara
    • Journal Title

      AIP Advances

      Volume: 6 Issue: 4 Pages: 045105-045105

    • DOI

      10.1063/1.4946849

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Enhanced photo/electroluminescence properties of GaN:Eu through optimization of the growth conditions and defect environment2016

    • Author(s)
      W. Zhu, B. Mitchell, D. Timmerman, A. Uedono, A. Koizumi, and Y. Fujiwara
    • Journal Title

      APL Materials

      Volume: 4 Issue: 5

    • DOI

      10.1063/1.4950826

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Investigation of optical gain in Eu-doped GaN thin film grown by OMVPE method2016

    • Author(s)
      N. N. Ha, A. Nishikawa, Y. Fujiwara, and T. Gregorkiewicz
    • Journal Title

      Journal of Science: Advanced Materials and Devices

      Volume: 1 Issue: 2 Pages: 220-223

    • DOI

      10.1016/j.jsamd.2016.06.004

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Control of GaN facet structures through Eu doping toward achieving semipolar {1-101} and {2-201} InGaN/GaN quantum wells2016

    • Author(s)
      T. Kojima, S. Takano, R. Hasegawa, D. Timmerman, A. Koizumi, M. Funato, Y. Kawakami, and Y. Fujiwara
    • Journal Title

      Applied Physics Letters

      Volume: 109 Issue: 18

    • DOI

      10.1063/1.4965844

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Optical and Electrical Study of Defects in GaN in situ doped with Eu3+ ion grown by OMVPE2016

    • Author(s)
      J. Wang, A. Koizumi, Y. Fujiwara, and W. M. Jadwisienczak
    • Journal Title

      Journal of Electronic Materials

      Volume: 45 Issue: 12 Pages: 6355-6362

    • DOI

      10.1007/s11664-016-4983-6

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Dimerization of emission centers in Eu-doped GaN red light-emitting diode: cooperative charge capturing using valence states coupling2016

    • Author(s)
      M. Ishii, A. Koizumi, and Y. Fujiwara
    • Journal Title

      Journal of Physics: Condensed Matter

      Volume: 29 Issue: 2 Pages: 025702-025702

    • DOI

      10.1088/0953-8984/29/2/025702

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications2016

    • Author(s)
      B. Mitchell, D. Timmerman, J. Poplawsky, W. Zhu, D. Lee, R. Wakamatsu, J. Takatsu, M. Matsuda, W. Guo, K. Lorenz, E. Alves, A. Koizumi, V. Dierolf, and Y. Fujiwara
    • Journal Title

      Scientific Reports

      Volume: 6 Issue: 1

    • DOI

      10.1038/srep18808

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/f noise involved in forward current2016

    • Author(s)
      M. Ishii, A. Koizumi, and Y. Fujiwara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 1 Pages: 015801-015801

    • DOI

      10.7567/jjap.55.015801

    • NAID

      210000145898

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Study of defects in GaN in situ doped with Eu3+ ion grown by OMVPE2016

    • Author(s)
      J. Wang, A. Koizumi, Y. Fujiwara, and W. M. Jadwisienczak
    • Journal Title

      Journal of Electronic Materials

      Volume: 45 Issue: 4 Pages: 2001-2007

    • DOI

      10.1007/s11664-016-4337-4

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Nanoscale determinant to brighten up GaN:Eu red light-emitting diode: Local potential of Eu-defect complexes2015

    • Author(s)
      Masashi Ishii, Atsushi Koizumi, and Yasufumi Fujiwara
    • Journal Title

      Journal of Applied Physics

      Volume: 117 Issue: 15 Pages: 1553071-7

    • DOI

      10.1063/1.4918662

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Three-dimensional spectrum mapping of bright emission centers: investigating the brightness-limiting process in Er-doped GaN red LEDs2015

    • Author(s)
      M. Ishii, A. Koizumi, and Y. Fujiwara
    • Journal Title

      Applied Physics Letters

      Volume: 107 Issue: 8 Pages: 0821061-4

    • DOI

      10.1063/1.4929531

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Resonant energy transfer between Eu luminescent sites and their local geometry in GaN2015

    • Author(s)
      D. Timmerman, R. Wakamatsu, K. Tanaka, D. Lee, A. Koizumi, and Y. Fujiwara
    • Journal Title

      Applied Physics Letters

      Volume: 107 Issue: 15

    • DOI

      10.1063/1.4933301

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
  • [Journal Article] Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy2015

    • Author(s)
      T. Arai, D. Timmerman, R. Wakamatsu, D. Lee, A. Koizumi, and Y. Fujiwara
    • Journal Title

      Journal of Luminescence

      Volume: 158 Pages: 70-74

    • DOI

      10.1016/j.jlumin.2014.09.036

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Unique properties of photoluminescence excitation spectra in a Eu-doped GaN epitaxial film2015

    • Author(s)
      M. Nakayama, S. Nakamura, H. Takeuchi, A. Koizumi, and Y. Fujiwara
    • Journal Title

      Applied Physics Letters

      Volume: 106 Issue: 1

    • DOI

      10.1063/1.4905309

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] In situ Eu doping into AlxGa1-xN grown by organometallic vapor phase epitaxy to improve luminescence properties2015

    • Author(s)
      A. Koizumi, K. Kawabata, D. Lee, A. Nishikawa, Y. Terai, H. Ofuchi, T. Honma, and Y. Fujiwara
    • Journal Title

      Optical Materials

      Volume: 41 Pages: 75-79

    • DOI

      10.1016/j.optmat.2014.11.005

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy2014

    • Author(s)
      Y. Fujiwara and V. Dierolf
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53 Issue: 5S1 Pages: 05FA13-05FA13

    • DOI

      10.7567/jjap.53.05fa13

    • NAID

      210000143781

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Thermodynamics and kinetics of three Mg-H-VN complexes in Mg:GaN - A combined First-Principle and experimental study2014

    • Author(s)
      D. Lee, B. Mitchell, Y. Fujiwara, and V. Dierolf
    • Journal Title

      Physical Review Letters

      Volume: 112 Issue: 20

    • DOI

      10.1103/physrevlett.112.205501

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] The role of donor-acceptor pairs in the excitation mechanism of Eu-ions in GaN:Eu epitaxial layers2014

    • Author(s)
      B. Mitchell, J. Poplawsky, D. Lee, A. Koizumi, Y. Fujiwara, and V. Dierolf
    • Journal Title

      Journal of Applied Physics

      Volume: 115 Issue: 20

    • DOI

      10.1063/1.4879253

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Optical activity and external photoluminescence quantum efficiency of Eu3+ in GaN2014

    • Author(s)
      W. D. Boer, C. McConigle, T. Gregorkiewicz, Y. Fujiwara, S. Tanabe, and P. Stallinga
    • Journal Title

      Scientific Reports

      Volume: 4 Issue: 1

    • DOI

      10.1038/srep05235

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Afterglow of Eu-related emission in Eu-doped gallium nitride grown by organometallic vapor phase epitaxy2014

    • Author(s)
      R. Wakamatsu, D. Timmerman, D. Lee, A. Koizumi, and Y. Fujiwara
    • Journal Title

      Journal of Applied Physics

      Volume: 116 Issue: 4

    • DOI

      10.1063/1.4891232

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Enhancement in light efficiency of a GaN:Eu red light-emitting diode by pulse-controlled injected charges2014

    • Author(s)
      M. Ishii, A. Koizumi, and Y. Fujiwara
    • Journal Title

      Applied Physics Letters

      Volume: 105 Issue: 17

    • DOI

      10.1063/1.4900840

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode2014

    • Author(s)
      Y. Kashiwagi, A. Koizumi, Y. Takemura, S. Furuta, M. Yamamoto, M. Saitoh, M. Takahashi, T. Ohno, Y. Fujiwara, K. Murahashi, K. Ohtsuka, and M. Nakamoto
    • Journal Title

      Applied Physics Letters

      Volume: 105 Issue: 22 Pages: 223509-223509

    • DOI

      10.1063/1.4903234

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] 希土類添加GaNとLED応用2014

    • Author(s)
      藤原康文、小泉淳
    • Journal Title

      レーザー研究

      Volume: 42 Pages: 211-215

    • NAID

      130007897579

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Vibrationally induced center reconfiguration in co-doped GaN:Eu,Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels2014

    • Author(s)
      B. Mitchell, D. Lee, D. Lee, Y. Fujiwara, and V. Dierolf
    • Journal Title

      Applied Physics Letters

      Volume: 103 Issue: 24

    • DOI

      10.1063/1.4846575

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Eu添加GaN赤色発光ダイオード ~電気を流してEuを光らせる~2014

    • Author(s)
      藤原康文
    • Journal Title

      オプトロニクス

      Volume: 382 Pages: 114-118

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of annealing on Eu-Mg-H complex optical center in Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy2013

    • Author(s)
      D. Lee, R. Wakamatsu, A. Koizumi, Y. Terai, J. D. Poplawsky, V. Dierolf, and Y. Fujiwara
    • Journal Title

      Applied Physics Letters

      Volume: 102 Issue: 14

    • DOI

      10.1063/1.4800447

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Control of Eu luminescence centers by codoping of Mg and Si in Eu-doped GaN2013

    • Author(s)
      D. Lee, R. Wakamatsu, A. Koizumi, Y. Terai, and Y. Fujiwara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JM01-08JM01

    • DOI

      10.7567/jjap.52.08jm01

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Luminescence properties of Eu-doped GaN grown on GaN substrate2013

    • Author(s)
      R. Wakamatsu, D. Lee, A. Koizumi, V. Dierolf, Y. Terai, and Y. Fujiwara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JM03-08JM03

    • DOI

      10.7567/jjap.52.08jm03

    • NAID

      210000142745

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites2013

    • Author(s)
      R. Wakamatsu, D. Lee, A. Koizumi, V. Dierolf, and Y. Fujiwara
    • Journal Title

      Journal of Applied Physics

      Volume: 114 Issue: 4

    • DOI

      10.1063/1.4816088

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electron-beam-induced migration of hydrogen in Mg-doped GaN using Eu as a probe2013

    • Author(s)
      B. Mitchell, D. Lee, D. Lee, A. Koizumi, J. Poplawsky, Y. Fujiwara, and V. Dierolf
    • Journal Title

      Physical Review B

      Volume: 88 Issue: 12

    • DOI

      10.1103/physrevb.88.121202

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Formation of Eu3+ luminescent centers in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition2013

    • Author(s)
      T. Tsuji, Y. Terai, M. H. B. Kamarudin, and Y. Fujiwara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 11R Pages: 111101-111101

    • DOI

      10.7567/jjap.52.111101

    • NAID

      210000143056

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Roles of defects in the excitation of Eu ions in Eu:GaN2013

    • Author(s)
      J. D. Poplawsky, A. Nishikawa, Y. Fujiwara, and V. Dierolf
    • Journal Title

      Optical Express

      Volume: 21 Issue: 25 Pages: 30633-30641

    • DOI

      10.1364/oe.21.030633

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] 希土類添加半導体の精密制御成長と発光機能2013

    • Author(s)
      小泉淳、藤原康文
    • Journal Title

      スマートプロセス学会誌

      Volume: 2 Pages: 213-218

    • NAID

      10031200067

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Eu luminescence center created by Mg codoping in Eu-doped GaN2012

    • Author(s)
      D. Lee, A. Nishikawa, Y. Terai, and Y. Fujiwara
    • Journal Title

      Applied Physics Letters

      Volume: 100 Issue: 17

    • DOI

      10.1063/1.4704920

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Induced magnetic moment of Eu3+ ions in GaN2012

    • Author(s)
      V. Kachkanov
    • Journal Title

      Scientific Reports

      Volume: 2 Issue: 1

    • DOI

      10.1038/srep00969

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy2012

    • Author(s)
      A.Nishikawa, N.Furukawa, D.Lee, K.Kawabata, T.Matsuno, R.Harada, Y.Terai, Y.Fujiwara
    • Journal Title

      Materials Research Society Symposium Proceedings

      Volume: (印刷中) Pages: 9-13

    • DOI

      10.1557/opl.2011.994

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Photoluminescence x-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy2012

    • Author(s)
      S.Emura, K.Higashi, A.Itatani, H.Torigoe, Y.Kuroda, A.Nishikawa, Y.Fujiwara, H.Asahi
    • Journal Title

      Materials Research Society Symposium Proceedings

      Volume: (印刷中) Pages: 15-20

    • DOI

      10.1557/opl.2011.1241

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometalic vapor-phase epitaxy2012

    • Author(s)
      J.Poplawsky, N.Woodward, A.Nishikawa, Y.Fujiwara, V.Dierolf
    • Journal Title

      Materials Research Society Symposium Proceedings

      Volume: (印刷中) Pages: 21-26

    • DOI

      10.1557/opl.2011.1049

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Site selective magneto-optical studies of Eu ions in gallium nitride2012

    • Author(s)
      N.Woodward, A.Nishikawa, Y.Fujiwara, V.Dierolf
    • Journal Title

      Materials Research Society Symposium Proceedings

      Volume: (印刷中) Pages: 111-115

    • DOI

      10.1557/opl.2011.1156

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] OMVPE法により作製したEu添加GaNの発光特性及び赤色発光ダイオードへの応用2012

    • Author(s)
      西川敦
    • Journal Title

      日本結晶成長学会誌

      Volume: 38 Pages: 270-273

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Concentration quenching in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition2012

    • Author(s)
      T. Tsuji
    • Journal Title

      Journal of Luminescence

      Volume: 132 Issue: 12 Pages: 3125-3128

    • DOI

      10.1016/j.jlumin.2011.12.042

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition2012

    • Author(s)
      T. Tsuji
    • Journal Title

      Journal of Non-Crystalline Solids

      Volume: 358 Issue: 17 Pages: 2443-2445

    • DOI

      10.1016/j.jnoncrysol.2011.12.099

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Presentation] 希土類添加半導体を用いた狭帯域赤色LEDの新展開2017

    • Author(s)
      藤原康文
    • Organizer
      JPC 産業用 LED 応用研究会&JPC 関西定例講演会 ~最新の半導体光源(LED/LD)とその応用~
    • Place of Presentation
      マイドームおおさか、大阪市中央区
    • Year and Date
      2017-03-10
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] Challenge to highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN2017

    • Author(s)
      Y. Fujiwara, T. Inaba, W. Zhu, B. Mitchell1, T. Kojima, and T. Gregorkiewicz
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices 2017, German-Japanese-Spanish Joint Workshop
    • Place of Presentation
      Hotel Punta Rotja, Mallorca, Spain
    • Year and Date
      2017-03-05
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] 希土類添加GaNの物性と構造評価2017

    • Author(s)
      藤原康文
    • Organizer
      材料系共同利用研究報告会
    • Place of Presentation
      大阪大学吹田キャンパス、吹田市
    • Year and Date
      2017-01-16
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] The Influence of Local and Extended Defect Environments on the Optical and Material Properties of GaN:Eu2016

    • Author(s)
      B. B.Mitchell, W. Zhu, J. Poplawsky, A. Koizumi, V. Dierolf, and Y. Fujiwara
    • Organizer
      2016 MRS Fall Meeting, Symposium EM2: Rare-Earths in Advanced Photonics and Spintronics
    • Place of Presentation
      Boston, USA
    • Year and Date
      2016-11-27
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Eu-Doped GaN for Highly Efficient Wavelength-Stable Red LEDs2016

    • Author(s)
      Y. Fujiwara
    • Organizer
      Defects in Semiconductors, Gordon Research Conference
    • Place of Presentation
      Colby-Sawyer College, New London, USA
    • Year and Date
      2016-08-14
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Current understanding of Eu emission centers in Eu-doped GaN grown by organometallic vapor phase epitaxy2016

    • Author(s)
      A. Koizumi and Y. Fujiwara
    • Organizer
      9th Pacific Rim International Conference on Advanced Materials and Processing (PRICM9)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2016-08-01
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN as an active layer2016

    • Author(s)
      Y. Fujiwara
    • Organizer
      Light Conference 2016
    • Place of Presentation
      Changchun, China
    • Year and Date
      2016-07-04
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Enhanced red emission from Eu ions embedded in a GaN resonant optical microcavity2016

    • Author(s)
      Y. Fujiwara, T. Inaba, T. Kojima, B. Mitchell, A. Capretti, T. Gregorkiewicz, and A. Koizumi
    • Organizer
      Collaborative Conference on 3D and Materials Research 2016 (CC3DMR2016)
    • Place of Presentation
      Incheon, Seoul, Korea
    • Year and Date
      2016-06-20
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 希土類添加半導体とその新規発光デバイスへの応用2016

    • Author(s)
      藤原康文
    • Organizer
      分子・物質合成プラットフォーム平成28年度研究会
    • Place of Presentation
      銀杏会館、大阪大学吹田キャンパス、吹田市
    • Year and Date
      2016-06-17
    • Related Report
      2016 Annual Research Report
    • Invited
  • [Presentation] Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN2016

    • Author(s)
      Y. Fujiwara, T. Inaba, B. Mitchell, T. Kojima, and A. Koizumi
    • Organizer
      International Conference on Processing & Manufacturing of Advanced Materials; Processing, Fabrication, Properties, Applications (THERMEC’2016)
    • Place of Presentation
      Graz, Austria
    • Year and Date
      2016-05-29
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Enhanced Red Photo/electroluminescence from Eu-doped GaN through Optimization of Defect Environment2016

    • Author(s)
      Y. Fujiwara, W. Zhu, B. Mitchell, D. Timmerman, A. Uedono, and A. Koizumi
    • Organizer
      4th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA’16)
    • Place of Presentation
      Pacifico-Yokohama, Yokohama, Japan
    • Year and Date
      2016-05-18
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Valence state control of Eu ions in Eu-doped GaN grown by organometallic vapor phase epitaxy2016

    • Author(s)
      Y. Fujiwara, T. Nunokawa, M. Matsuda, W. Zhu, T. Kojima, and A. Koizumi
    • Organizer
      Workshop on Computational Nano-Materials Design and Realization for Energy-Saving and Energy-Creation Materials
    • Place of Presentation
      Osaka University, Japan
    • Year and Date
      2016-03-25
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] スパッタリング併用有機金属気相堆積法と希土類添加ZnOへの応用2016

    • Author(s)
      藤原康文
    • Organizer
      第63回 応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス、東京都目黒区
    • Year and Date
      2016-03-19
    • Related Report
      2015 Annual Research Report
    • Invited
  • [Presentation] Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN2015

    • Author(s)
      Y. Fujiwara, T. Inaba, B. Mitchell, T. Kojima, and A. Koizumi
    • Organizer
      2nd International Workshop on Luminescent Materials 2015 (LumiMat’15)
    • Place of Presentation
      Kyoto University, Kyoto, Japan
    • Year and Date
      2015-12-12
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Optoelectronic communications with GaN:Eu red LED: Messages from atomic scale emission centers2015

    • Author(s)
      M. Ishii and Y. Fujiwara
    • Organizer
      2nd International Workshop on Luminescent Materials 2015 (LumiMat’15)
    • Place of Presentation
      Kyoto University, Kyoto, Japan
    • Year and Date
      2015-12-12
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Eu添加GaN赤色LEDの高輝度化に向けて2015

    • Author(s)
      藤原康文、稲葉智宏,朱婉新,児島貴徳,小泉淳
    • Organizer
      日本学術振興会 ワイドギャップ半導体光・電子デバイス第162委員会第96回研究会
    • Place of Presentation
      湯田温泉ホテルかめ福、山口市
    • Year and Date
      2015-12-11
    • Related Report
      2015 Annual Research Report
    • Invited
  • [Presentation] Towards Photonic Applications of Rare-Earth-Doped ZnO2015

    • Author(s)
      Y. Fujiwara
    • Organizer
      International Conference on Advanced Materials (IUMRS-ICAM2015)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2015-10-25
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Towards highly efficient wavelength-stable red light-emitting diodes with Eu-doped GaN: effects of in-plane strain on Eu emission-2015

    • Author(s)
      Y. Fujiwara, T. Inaba, T. Kojima, and A. Koizumi
    • Organizer
      5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2015)
    • Place of Presentation
      Lakeshore Hotel, Hsinchu, Taiwan
    • Year and Date
      2015-09-06
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Drastic enhancement of Eu emission from red light-emitting Eu-doped GaN in a microcavity2015

    • Author(s)
      Y. Fujiwara, T. Inaba, T. Kojima, and A. Koizumi
    • Organizer
      11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2015)
    • Place of Presentation
      BEXCO, Busan, Korea
    • Year and Date
      2015-08-24
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN2015

    • Author(s)
      Y. Fujiwara
    • Organizer
      15th International Meeting on Information Display (IMID2015)
    • Place of Presentation
      EXCO, Daegu, Korea
    • Year and Date
      2015-08-18
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Valence control of Eu ions in Eu-doped GaN grown by organometallic vapor phase epitaxy2015

    • Author(s)
      Y. Fujiwara, M. Matsuda, W. Zhu, T. Kojima, and A. Koizumi
    • Organizer
      SPIE Nanoscience + Engineering
    • Place of Presentation
      San Diego, USA
    • Year and Date
      2015-08-09
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN as an active layer2015

    • Author(s)
      Y. Fujiwara, T. Kojima, and A. Koizumi
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices -2015 German-Japanese-Spanish Joint Workshop-
    • Place of Presentation
      Shiran-Kaikan, Kyoto University, Kyoto, Japan
    • Year and Date
      2015-07-11
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Present understanding of Eu luminescent centers in Eu-doped GaN2015

    • Author(s)
      Y. Fujiwara, R. Wakamatsu, A. Koizumi, and V. Dierolf
    • Organizer
      Collaborative Conference on 3D and Materials Research 2015 (CC3DMR2015)
    • Place of Presentation
      BEXCO, Busan, Korea
    • Year and Date
      2015-06-15
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] GaNを用いた窒化物半導体赤色LEDとその高輝度化2015

    • Author(s)
      藤原康文
    • Organizer
      日本学術振興会 透明酸化物光・電子材料第166委員会 第66回研究会、(5)
    • Place of Presentation
      アイビーホール青学会館(東京都渋谷区)
    • Year and Date
      2015-01-30
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] 希土類元素の精密ドーピングによる半導体光機能性の制御2014

    • Author(s)
      藤原康文、Dolf Timmerman、児島貴徳、小泉淳
    • Organizer
      第25回光物性研究会
    • Place of Presentation
      神戸大学百年記念会館(神戸市)
    • Year and Date
      2014-12-12 – 2014-12-13
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Eu site-dependent energy transfer in red light emitter of Eu-doped GaN2014

    • Author(s)
      Y. Fujiwara, R. Wakamatsu, D. Lee, B. Mitchell, A. Koizumi, and V. Dierolf
    • Organizer
      2014 MRS Fall Meeting, Symposium T: Wide-Bandgap Materials for Solid-State Lighting and Power Electronics, T4.05
    • Place of Presentation
      Boston, USA
    • Year and Date
      2014-11-30 – 2014-12-05
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Europium-doped gallium nitride and its application to environmentally-friendly red light-emitters2014

    • Author(s)
      Y. Fujiwara, D. Timmerman, T. Kojima, and A. Koizumi
    • Organizer
      1st International Symposium on Interactive Materials Science Cadet Program, IL7
    • Place of Presentation
      Hotel Hankyu Expo Park, Osaka, Japan
    • Year and Date
      2014-11-16 – 2014-11-19
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Eu-doped GaN and its application to environmentally-friendly red light-emitting diodes2014

    • Author(s)
      Y. Fujiwara, D. Timmerman, T. Kojima, and A. Koizumi
    • Organizer
      The second International Conference on Advanced Materials and Nanotechnology (ICAMN2014), IN04
    • Place of Presentation
      Hanoi, Vietnam
    • Year and Date
      2014-10-29 – 2014-11-01
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Energy transfer processes in Eu-doped GaN2014

    • Author(s)
      D. Timmerman and Y. Fujiwara
    • Organizer
      The second International Conference on Advanced Materials and Nanotechnology (ICAMN2014), IN19
    • Place of Presentation
      Hanoi, Vietnam
    • Year and Date
      2014-10-29 – 2014-11-01
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] 希土類元素を極める ―希土類添加半導体から何が見えてくるのか―2014

    • Author(s)
      藤原康文、児島孝徳、Dolf Timmerman、小泉淳
    • Organizer
      日本金属学会2014年秋期講演大会公募シンポジウム「S3 エレクトロニクス薄膜材料の科学と技術 Ⅱ」、S3-8
    • Place of Presentation
      名古屋大学東山キャンパス(名古屋市千種区)
    • Year and Date
      2014-09-24 – 2014-09-26
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Optical and electrical properties of Eu,Si-codoped GaN grown by organometallic vapor-phase epitaxy2014

    • Author(s)
      A. Koizumi, S. Kuwata, and Y. Fujiwara
    • Organizer
      Energy Materials Nanotechnology Meeting, A31
    • Place of Presentation
      Chengdu, China
    • Year and Date
      2014-09-22 – 2014-09-25
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] 希土類元素を極める ~Eu添加GaNから何が見えてきたか~2014

    • Author(s)
      藤原康文,小泉淳,大渕博宣,本間徹生
    • Organizer
      第17回XAFS討論会、2I-01
    • Place of Presentation
      徳島大学総合科学部(徳島市)
    • Year and Date
      2014-09-01 – 2014-09-03
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Strain-dependent energy transfer from GaN host to Eu ions in Eu-doped GaN2014

    • Author(s)
      Y. Fujiwara, R. Wakamatsu, and A. Koizumi
    • Organizer
      16th International Conference on High Pressure in Semiconductor Physics, Inv-8
    • Place of Presentation
      Mexico City, Mexico
    • Year and Date
      2014-08-06 – 2014-08-08
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] 希土類元素を極める ~希土類添加半導体を題材として~2014

    • Author(s)
      藤原康文
    • Organizer
      第7回次世代先端光科学研究会
    • Place of Presentation
      京都大学化学研究所(京都府宇治市)
    • Year and Date
      2014-07-28 – 2014-07-29
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Rare-earth-doped Semiconductors and Their Application to Photonic Devices2014

    • Author(s)
      Y. Fujiwara
    • Organizer
      Collaborative Conference on 3D & Materials Research (CC3DMR) 2014
    • Place of Presentation
      Incheon, Korea
    • Year and Date
      2014-06-22 – 2014-06-28
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Eu添加GaNにおける赤色発光効率のEuイオン局所構造依存性2014

    • Author(s)
      藤原康文、若松龍太、小泉淳
    • Organizer
      第353回蛍光体同学会講演会
    • Place of Presentation
      化学会館ホール(東京都千代田区)
    • Year and Date
      2014-06-06
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Effects of impurity codoping on luminescence properties in Eu-doped GaN2014

    • Author(s)
      Y. Fujiwara, D. Lee, A. Koizumi, B. Mitchell, and V. Dierolf
    • Organizer
      5th International Workshop on Photoluminescence Rare Earths (PRE’14): Photonic Materials and Devices, I-2
    • Place of Presentation
      San Sebastian, Spain
    • Year and Date
      2014-05-14 – 2014-05-16
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Eu添加GaN赤色発光ダイオードの現状と将来展望2014

    • Author(s)
      藤原康文
    • Organizer
      レーザー学会第9回「レーザーの農業応用」専門委員会
    • Place of Presentation
      大阪大学吹田キャンパス、大阪府吹田市
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] 希土類元素がもたらす桃源郷 ~希土類添加半導体とLEDへの応用~2014

    • Author(s)
      藤原康文
    • Organizer
      日本フォトニクス協議会関西設立記念講演会
    • Place of Presentation
      大阪商工会議所、大阪府大阪市中央区
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Eu-doped GaN and its application to nitride-based red light-emitting diodes2013

    • Author(s)
      Y. Fujiwara and A. Koizumi
    • Organizer
      Collaborative Conference on 3D & Materials Research (CC3DMR) 2013
    • Place of Presentation
      Jeju, Korea
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Rare-earth doped semiconductors and their application to novel light-emitting devices2013

    • Author(s)
      Y. Fujiwara
    • Organizer
      8th Pacific Rim International Conference on Advanced Materials and Processing (PRICM8)
    • Place of Presentation
      Waikoloa, Hawaii, USA
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Development of properties and functionalities by precise control of rare earth doping2013

    • Author(s)
      Y. Fujiwara and A. Koizumi
    • Organizer
      17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
    • Place of Presentation
      Warsaw, Poland
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Local-structure dependent energy transfer from the host to Eu ions in Eu-doped GaN2013

    • Author(s)
      Y. Fujiwara, R. Wakamatsu, D. Lee, V. Dierolf, and A. Koizumi
    • Organizer
      International Workshop on Luminescent Materials 2013 (LumiMat’13)
    • Place of Presentation
      Kyoto, Japan
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Recent progress in GaN-based red light-emitting diodes using Eu by organometallic vapor phase epitaxy2013

    • Author(s)
      Y. Fujiwara, D. Lee, R. Wakamatsu, and A. Koizumi
    • Organizer
      International Conference on Processing and Manufacturing of Advanced Materials (THERMEC’2013)
    • Place of Presentation
      Las Vegas, USA
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] 窒化物半導体赤色LEDの現状と将来展望~希土類元素がもたらす桃源郷!2013

    • Author(s)
      藤原康文
    • Organizer
      SEMI FORUM JAPAN 2013
    • Place of Presentation
      グランキューブ大阪、大阪府大阪市北区
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] 希土類元素を極める ~希土類添加窒化物半導体から何が見えてくるか~2013

    • Author(s)
      藤原康文、小泉淳
    • Organizer
      第5回 窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学吹田キャンパス、大阪府吹田市
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] 希土類元素がもたらす桃源郷!~希土類添加半導体と発光ダイオードへの応用~2013

    • Author(s)
      藤原康文
    • Organizer
      大阪大学光科学センター・りそな中小企業振興財団 技術懇親会「先進光源と産業応用」
    • Place of Presentation
      大阪大学(吹田市)
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] 希土類元素を極める ~「希土類添加半導体」を題材として~2013

    • Author(s)
      藤原康文
    • Organizer
      平成24年度大阪大学「物質・材料科学研究推進機構」講演会「物質科学における分野融合」
    • Place of Presentation
      大阪大学(豊中市)
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Current status of environment-friendly red light-emitting diodes with Eu-doped GaN2012

    • Author(s)
      Y. Fujiwara
    • Organizer
      5th International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA 2012)
    • Place of Presentation
      Nara, Japan
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] Environmentally friendly red light-emitting diodes using Eu-doped GaN2012

    • Author(s)
      Y. Fujiwara
    • Organizer
      LED 50th Anniversary Symposium
    • Place of Presentation
      Urbana-Champaign, Illinois, USA
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] 希土類元素を極める ~「希土類添加半導体」を題材として~2012

    • Author(s)
      藤原康文
    • Organizer
      大阪大学ナノ理工学人材育成産学コンソーシアム 平成24年度 第1回ナノ理工学情報交流会 (一般公開)「ナノ理工学に関する長期展望テーマの提案」
    • Place of Presentation
      大阪大学(豊中キャンパス)
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] 希土類添加半導体発光デバイス2012

    • Author(s)
      藤原康文
    • Organizer
      第126回微小光学研究会「微小光学の周期表-元素を見直す-」
    • Place of Presentation
      早稲田大学(東京都新宿区)
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Book] Rare Earth and Transition Metal Doping of Semiconductor Materials2016

    • Author(s)
      V. Dierolf, I.T. Ferguson, J.M. Zavada
    • Total Pages
      454
    • Publisher
      Elsevier
    • Related Report
      2015 Annual Research Report
  • [Book] Progress in Advanced Structural and Functional Materials Design2013

    • Author(s)
      Y. Fujiwara, Y. Terai, and A. Nishikawa(分担執筆)
    • Total Pages
      287
    • Publisher
      Springer
    • Related Report
      2013 Annual Research Report
  • [Book] Progress in Advanced Structural and Functional Materials Design2013

    • Author(s)
      Y. Fujiwara (分担執筆)
    • Total Pages
      287
    • Publisher
      Springer
    • Related Report
      2012 Annual Research Report
  • [Remarks] 大阪大学藤原研究室

    • URL

      http://www.mat.eng.osaka-u.ac.jp/mse6/

    • Related Report
      2016 Annual Research Report 2015 Annual Research Report
  • [Remarks] 大阪大学藤原研究室紹介動画

    • URL

      http://www.mat.eng.osaka-u.ac.jp/mse6/?video

    • Related Report
      2016 Annual Research Report
  • [Remarks] 藤原研究室紹介動画

    • URL

      http://www.mat.eng.osaka-u.ac.jp/mse6/?video

    • Related Report
      2015 Annual Research Report 2014 Annual Research Report
  • [Remarks] 大阪大学藤原研究室

    • URL

      http://www.mat.eng.osaka-u.ac.jp/mse6/?FrontPage

    • Related Report
      2014 Annual Research Report
  • [Remarks] 基盤研究(S)「希土類添加窒化物半導体における赤色発光機構の解明/制御による高輝度発光素子の開発」

    • URL

      http://www.mat.eng.osaka-u.ac.jp/mse6/kiban/

    • Related Report
      2014 Annual Research Report
  • [Remarks] 大阪大学藤原研究室

    • URL

      http://www.mat.eng.osaka-u.ac.jp/mse6/

    • Related Report
      2013 Annual Research Report
  • [Remarks] 大阪大学藤原研究室

    • URL

      http://www.mat.eng.osaka-u.ac.jp/mse6/

    • Related Report
      2012 Annual Research Report
  • [Patent(Industrial Property Rights)] AlInN厚膜形成技術2017

    • Inventor(s)
      藤原康文、稲葉智宏
    • Industrial Property Rights Holder
      藤原康文、稲葉智宏
    • Industrial Property Rights Type
      特許
    • Filing Date
      2017-02-28
    • Related Report
      2016 Annual Research Report
  • [Patent(Industrial Property Rights)] 窒化物半導体基板とその製造方法および半導体デバイス2016

    • Inventor(s)
      藤原康文、朱婉新、小泉淳、他2名
    • Industrial Property Rights Holder
      藤原康文、朱婉新、小泉淳、他2名
    • Industrial Property Rights Type
      特許
    • Filing Date
      2016-11-25
    • Related Report
      2016 Annual Research Report
  • [Patent(Industrial Property Rights)] 赤色発光半導体素子とその製造方法2013

    • Inventor(s)
      藤原康文、小泉淳
    • Industrial Property Rights Holder
      藤原康文、小泉淳
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-047022
    • Filing Date
      2013-03-08
    • Related Report
      2012 Annual Research Report
  • [Patent(Industrial Property Rights)] 赤色発光半導体素子とその製造方法、および窒化物半導体素子用基板とその製造方法2012

    • Inventor(s)
      藤原康文、小泉淳、寺井慶和
    • Industrial Property Rights Holder
      藤原康文、小泉淳、寺井慶和
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2012-184347
    • Filing Date
      2012-08-23
    • Related Report
      2012 Annual Research Report

URL: 

Published: 2012-11-27   Modified: 2022-01-28  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi