Flexible electronics on mica substrates

• Project/Area Number: 24245040
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Inorganic industrial materials
• Research Institution: The University of Tokyo
• Principal Investigator: FUJIOKA Hiroshi 東京大学, 生産技術研究所, 教授 (50282570)
• Project Period (FY): 2012-05-31 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥45,630,000 (Direct Cost: ¥35,100,000、Indirect Cost: ¥10,530,000); Fiscal Year 2014: ¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000); Fiscal Year 2013: ¥13,130,000 (Direct Cost: ¥10,100,000、Indirect Cost: ¥3,030,000); Fiscal Year 2012: ¥14,690,000 (Direct Cost: ¥11,300,000、Indirect Cost: ¥3,390,000)
• Keywords: 雲母 / 窒化物半導体 / フレキシブルエレクトロニクス / GaN / スパッタ

Outline of Final Research Achievements

We have investigated the feasibility of fabricating flexible GaN-based light emitting diodes (LEDs) on mica substrates. The polarity control of the GaN films on mica substrates has been demonstrated with and without the AlN buffer layers. It has been found that it is possible to grow n- and p-type GaN films and to form a multiple quantum wells on mica substrates. We fabricated GaN-based LEDs and confirmed their successful operation. These results indicate that the present technique is quite promising as a future fabrication method for large-area and flexible GaN light-emitting displays.

Research Products

• [Journal Article] Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique (2014)
  • Author(s): 中村 英司、上野 耕平
  • Journal Title: Applied Physics Letter Volume: 104 Issue: 5 Pages: 051121-051121
  • DOI: 10.1063/1.4864283
  • Peer Reviewed
• [Journal Article] Theoretical study on initial stage of InN growth on cubic zirconia (111) substrates (2013)
  • Author(s): Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, and H. Fujioka
  • Journal Title: Physica Status Solidi RRL Volume: 7 Issue: 3 Pages: 207-210
  • DOI: 10.1002/pssr.201206465
  • Peer Reviewed
• [Journal Article] Theoretical Investigation of the Polarity Determination for c-plane InN Grown on Yttria-Stabilized Zirconia (111) Substrates with Yttrium Surface Segregation (2013)
  • Author(s): Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, and H. Fujioka
  • Journal Title: Applied Physics Express Volume: 6-021002 Issue: 2 Pages: 1-3
  • DOI: 10.7567/apex.6.021002
  • NAID: 10031152671
  • Peer Reviewed
• [Journal Article] Structural properties of m-plane InAlN films grown on ZnO substrates with room-temperature GaN buffer layers (2013)
  • Author(s): T. Kajima, A. Kobayashi, K. Uen, J. Ohta, H. Fujioka, and M. Oshima
  • Journal Title: Applied Physics Express Volume: 6-021003 Issue: 2 Pages: 1-3
  • DOI: 10.7567/apex.6.021003
  • Peer Reviewed
• [Journal Article] Band Configuration of SiO2/m-Plane ZnO Heterointerface Correlated with Electrical Properties of Al/SiO2/ZnO Structures (2013)
  • Author(s): J. Liu, A. Kobayashi, K. Ueno, J. Ohta, H. Fujioka, and M. Oshima
  • Journal Title: Japanese Journal of Applied Physics Volume: 52-011101 Issue: 1R Pages: 1-4
  • DOI: 10.7567/jjap.52.011101
  • NAID: 210000141719
  • Peer Reviewed
• [Journal Article] Electron mobility of ultrathin InN grown on yttria-stabilized zirconia with two-dimensionally grown initial layers (2013)
  • Author(s): K. Okubo, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
  • Journal Title: Applied Physics Letters Volume: 102-022103 Issue: 2 Pages: 1-3
  • DOI: 10.1063/1.4776210
  • Peer Reviewed
• [Journal Article] Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces (2012)
  • Author(s): A.Kobayashi, K.Ohkubo, J. Ohta, M. Oshima, and H. Fujioka
  • Journal Title: Physica Status Solidi A Volume: 209 Issue: 11 Pages: 2251-2254
  • DOI: 10.1002/pssa.201228287
  • Peer Reviewed
• [Presentation] PSD 法により作製した高In 組成InGaN 薄膜の光学定数評価 (2014)
  • Author(s): 野口英成, 上野耕平, 太田実雄, 小林篤, 藤岡洋
  • Organizer: 第6回 窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学
  • Year and Date: 2014-07-25 – 2014-07-26
• [Presentation] Fabrication of Nitride Devices by Pulsed Sputtering Deposition (2014)
  • Author(s): H. Fujioka
  • Organizer: CIMTEC2014
  • Place of Presentation: Montecatini Terme, Italy
  • Year and Date: 2014-06-15 – 2014-06-19
  • Invited
• [Presentation] Pulsed Sputtering Technique for Fabrication of Future Nitride Devices (2014)
  • Author(s): H. Fujioka
  • Organizer: E-MRS 2014 SPRING MEETING, SYMPOSIUM K
  • Place of Presentation: Congress Center, Lille, France
  • Year and Date: 2014-05-26 – 2014-05-30
  • Invited
• [Presentation] Nitride Materials and Devices Prepared by Pulsed Sputtering (2014)
  • Author(s): H. Fujioka
  • Organizer: International Conference on Metamaterials and Nanophysics
  • Place of Presentation: Hotel Melia Varadero, Cuba
  • Year and Date: 2014-04-22 – 2014-05-01
  • Invited
• [Presentation] PSD法により成長したInGaN薄膜の光学特性評価 (2014)
  • Author(s): 上野耕平，野口英成，太田実雄，藤岡 洋，尾嶋正治
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学
  • Year and Date: 2014-03-17 – 2014-03-20
• [Presentation] Preparation of Nitride Devices by Plasma Processing (2014)
  • Author(s): H. Fujioka
  • Organizer: ISPlasma 2014
  • Place of Presentation: 名古屋大学
  • Year and Date: 2014-03-02 – 2014-03-06
  • Invited
• [Presentation] 窒化物発光素子製造プロセスの低温化 (2013)
  • Author(s): 中村英司，上野耕平，太田実雄，藤岡洋，尾嶋正治
  • Organizer: 第43回結晶成長国内会議（NCCG-43）
  • Place of Presentation: 長野市生涯学習センター
  • Year and Date: 2013-11-07
• [Presentation] Characteristics of GaN Films Prepared by PXD and Their Device Applications (2013)
  • Author(s): H. Fujioka
  • Organizer: ICMAT2013
  • Place of Presentation: Suntec International Convention & Exhibition Centre, Singapore
  • Year and Date: 2013-06-30 – 2013-07-05
  • Invited
• [Presentation] Characteristics of GaN devices prepared by pulsed sputtering (2013)
  • Author(s): Hiroshi Fujioka
  • Organizer: 5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
  • Place of Presentation: Nagoya, Japan
  • Invited
• [Presentation] 安定化ジルコニア基板上へのN 極性InN 薄膜の成長 (2013)
  • Author(s): 大関正彬，大久保佳奈，小林 篤，太田実雄，尾嶋正治，藤岡 洋
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] 絶縁膜/ 極薄InN/YSZ 構造の作製と評価 (2013)
  • Author(s): 大久保佳奈，小林 篤，太田実雄，尾嶋正治，藤岡 洋
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] 非晶質基板上へ成長したInN の特性評価 (2013)
  • Author(s): 伊藤剛輝，小林 篤，太田実雄，藤岡 洋，尾嶋正治
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] N 極性InGaN/GaN 量子井戸構造の作製および評価 (2013)
  • Author(s): 岸川英司，上野耕平，井上 茂，太田実雄，藤岡 洋
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] Si(110) 基板上へのGaN 薄膜成長と中間層の効果 (2013)
  • Author(s): 近藤尭之，上野耕平，太田実雄，藤岡 洋
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] PSD 法によるパターンサファイア基板上GaN 薄膜成長 (2013)
  • Author(s): 上野耕平，井上 茂，太田実雄，藤岡 洋，尾嶋正治
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] PSD 法によるC ドープGaN 薄膜の成長 (2013)
  • Author(s): 渡辺拓人，丹所昂平，井上 茂，太田実雄，藤岡 洋
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] GaN growth on graphene by pulsed sputtering deposition (2013)
  • Author(s): Jeongwoo Shon，太田実雄，上野耕平，藤岡 洋
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] ポリマーを出発材料に用いたグラファイトシート上への窒化物薄膜結晶成長と発光素子への応用 (2013)
  • Author(s): 太田実雄，金子俊郎，平崎哲郎，植 仁志，児玉昌也，藤岡 洋
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] 窒化物LED 低温製造プロセスの開発 (2013)
  • Author(s): 中村英司，上野耕平，井上 茂，太田実雄，藤岡 洋，尾嶋正治
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] Characteristics of InN and Related Materials with Various Surface Orientations (2012)
  • Author(s): Hiroshi Fujioka, Kana Ohkubo, Masaaki Ooseki, Atsushi Kobayashi and Masaharu Oshima
  • Organizer: 2012 Electronic Materials Conference (EMC2012)
  • Place of Presentation: Pennsylvania, USA
• [Presentation] Feasibility of Large Area Nitride Semiconductor Devices (2012)
  • Author(s): Hiroshi Fujioka
  • Organizer: The 1st International Symposium on Single Crystals and Wafers for LEDs
  • Place of Presentation: Wonju, Korea
  • Invited
• [Presentation] Future prospect of large area nitride devices prepared by pulsed sputtering deposition (2012)
  • Author(s): Hiroshi Fujioka
  • Organizer: 4th International Symposium on Growth of III-Nitrides (ISGN-4)
  • Place of Presentation: St. Petersburg, Russia
  • Invited
• [Presentation] InGaN prepared by pulsed sputtering and its application to solar cells (2012)
  • Author(s): K. Morita, M. Katoh, J. Ohta, S. Inoue, H.Fujioka
  • Organizer: 4th International Symposium on Growth of III-Nitrides (ISGN-4)
  • Place of Presentation: St. Petersburg, Russia
• [Presentation] Improvement in crystalline quality of GaN prepared by pulsed sputtering by the use of SiNx islands (2012)
  • Author(s): T. Kondo, J. Ohta, S. Inoue, A. Kobayashi, and H. Fujioka
  • Organizer: 4th International Symposium on Growth of III-Nitrides (ISGN-4)
  • Place of Presentation: St. Petersburg, Russia
• [Presentation] Polarity inversion mechanism at oxidized AlN layers (2012)
  • Author(s): E. Kishikawa, K. Ueno, S. Inoue, J. Ohta, H. Fujioka, and M. Oshima
  • Organizer: 4th International Symposium on Growth of III-Nitrides (ISGN-4)
  • Place of Presentation: St. Petersburg, Russia
• [Presentation] Characterization of ultrathin InN films grown on YSZ substrates (2012)
  • Author(s): K. Okubo, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
  • Organizer: 4th International Symposium on Growth of III-Nitrides (ISGN-4)
  • Place of Presentation: St. Petersburg, Russia
• [Presentation] Epitaxial growth of semipolar InAlN with high In concentrations on yttria-stabilized zirconia substrates (2012)
  • Author(s): M. Oseki, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima
  • Organizer: 4th International Symposium on Growth of III-Nitrides (ISGN-4)
  • Place of Presentation: St. Petersburg, Russia
• [Presentation] Feasibility of large area nitride devices prepared by pulsed sputtering (2012)
  • Author(s): Hiroshi Fujioka
  • Organizer: International Workshop on Nitride Semiconductors 2012 （IWN2012）
  • Place of Presentation: Sapporo, Japan
  • Invited
• [Presentation] Optical and structural characteristics of nonpolar InGaN and InAlN films grown on ZnO substrates (2012)
  • Author(s): Atsushi Kobayashi, Hiroaki Tamaki, JitsuoOhta, Masaharu Oshima, and Hiroshi Fujioka
  • Organizer: International Workshop on Nitride Semiconductors 2012 （IWN2012）
  • Place of Presentation: Sapporo, Japan
• [Presentation] Pulsed sputtering deposition of high-quality AlN on thermally-nitrided sapphire substrates (2012)
  • Author(s): Kohei Ueno, Eiji Kishikawa, Shigeru Inoue, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima, and Hiroyuki Fukuyama
  • Organizer: International Workshop on Nitride Semiconductors 2012 （IWN2012）
  • Place of Presentation: Sapporo, Japan
• [Presentation] Low-temperature growth of semipolar InAlN on YSZ substrates (2012)
  • Author(s): M. Oseki, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima
  • Organizer: International Workshop on Nitride Semiconductors 2012 （IWN2012）
  • Place of Presentation: Sapporo, Japan
• [Presentation] Comprehensive study of polarity flip mechanism at thermally-oxidized AlN layers (2012)
  • Author(s): Eiji Kishikawa, Kohei Ueno, Shigeru Inoue, Jitsuo Ohta, Masaharu Oshima, and Hiroshi Fujioka
  • Organizer: International Workshop on Nitride Semiconductors 2012 （IWN2012）
  • Place of Presentation: Sapporo, Japan
• [Presentation] Crystal Growth of Nitride Semiconductors on Large Substrates (2012)
  • Author(s): Hiroshi Fujioka
  • Organizer: CCCG-16
  • Place of Presentation: Hefei, China
  • Invited
• [Presentation] Nitride Devices Fabricated with Pulsed Sputtering Depositon (2012)
  • Author(s): Hiroshi Fujioka
  • Organizer: Intensive Discussion on Growth of Nitride Semiconductors
  • Place of Presentation: Sendai, Japan
  • Invited
• [Presentation] Feasibility of III-Nitride LEDs prepared on large area substrates (2012)
  • Author(s): Hiroshi Fujioka
  • Organizer: 2012 International Symposium on Crystal Growth
  • Place of Presentation: Seoul, Korea
  • Invited
• [Presentation] Si(110)基板上GaN薄膜の極性制御 (2012)
  • Author(s): 近藤尭之、太田実雄、井上茂、藤岡洋
  • Organizer: 秋季 第73回応用物理学会学術講演会
  • Place of Presentation: 松山大学
• [Presentation] YSZ基板上への 酸窒化インジウム混晶薄膜の作製 (2012)
  • Author(s): 小林篤、伊藤剛輝、太田実雄、尾嶋正治、藤岡洋
  • Organizer: 秋季 第73回応用物理学会学術講演会
  • Place of Presentation: 松山大学
• [Presentation] 高速エピタキシャル成長させたInN薄膜の特性評価 (2012)
  • Author(s): 大関正彬、大久保佳奈、小林篤、太田実雄、尾嶋正治、藤岡洋
  • Organizer: 秋季 第73回応用物理学会学術講演会
  • Place of Presentation: 松山大学
• [Presentation] YSZ(111)基板上に作製したInN薄膜の特性 (2012)
  • Author(s): 大久保佳奈，大関正彬，小林 篤，太田実雄，尾嶋正治，藤岡 洋
  • Organizer: 秋季 第73回応用物理学会学術講演会
  • Place of Presentation: 松山大学
• [Presentation] ZnO基板上へコヒーレント成長させた窒化物半導体薄膜の特性 (2012)
  • Author(s): 小林篤，梶間智文，玉木啓晶，太田実雄，尾嶋正治，藤岡洋
  • Organizer: 第42回結晶成長国内会議
  • Place of Presentation: 九州大学
• [Presentation] パルススパッタ堆積法によるサファイア基板上GaN(000-1)薄膜の高品質化 (2012)
  • Author(s): 上野耕平，中村英司，岸川英司，井上茂，太田実雄，藤岡洋，尾嶋正治
  • Organizer: 第42回結晶成長国内会議
  • Place of Presentation: 九州大学
• [Presentation] パルススパッタ法によるSi(110)基板上へのGaN薄膜成長と構造特性評価 (2012)
  • Author(s): 近藤尭之，井上茂，太田実雄，藤岡洋
  • Organizer: 第42回結晶成長国内会議
  • Place of Presentation: 九州大学
• [Presentation] YSZ基板を用いたc面InN薄膜の高品質化 (2012)
  • Author(s): 大久保佳奈，大関正彬，小林篤，太田実雄，尾嶋正治，藤岡洋
  • Organizer: 第42回結晶成長国内会議
  • Place of Presentation: 九州大学