| Budget Amount *help |
¥47,190,000 (Direct Cost: ¥36,300,000、Indirect Cost: ¥10,890,000)
Fiscal Year 2014: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2013: ¥13,780,000 (Direct Cost: ¥10,600,000、Indirect Cost: ¥3,180,000)
Fiscal Year 2012: ¥28,470,000 (Direct Cost: ¥21,900,000、Indirect Cost: ¥6,570,000)
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| Outline of Final Research Achievements |
To create function-merged devices, formation of fully-relaxed Ge thin films on Si substrate by using carbon as a surfactant was investigated. By studying the process through the formation of Si-C bonds and the simultaneous fabrication of Si-C/Ge-C bonds, it was confirmed that fully-relaxed Ge thin films could be formed. Furthermore, it was found that the formation of Ge quantum dots in a self-assemble manner would be formed by the reconstruction of Si(100) surface into C(4x4) structure through the formation of Si-C bonds.
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