Formation of relaxed Ge thin films by surfactant mediation and its application to devices
| Project/Area Number |
24246003
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
WASHIO KATSUYOSHI 東北大学, 工学(系)研究科(研究院), 教授 (20417017)
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| Co-Investigator(Kenkyū-buntansha) |
SAKURABA Masao 東北大学, 電気通信研究所, 准教授 (30271993)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥47,190,000 (Direct Cost: ¥36,300,000、Indirect Cost: ¥10,890,000)
Fiscal Year 2014: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2013: ¥13,780,000 (Direct Cost: ¥10,600,000、Indirect Cost: ¥3,180,000)
Fiscal Year 2012: ¥28,470,000 (Direct Cost: ¥21,900,000、Indirect Cost: ¥6,570,000)
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| Keywords | ゲルマニウム / カーボン / サーファクタント / 緩和 / シリコン / 機能融合 / ドット / 自己組織 / 結晶成長 / 量子ドット / 電子デバイス / 光素子 / コミュニケーション |
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| Outline of Final Research Achievements |
To create function-merged devices, formation of fully-relaxed Ge thin films on Si substrate by using carbon as a surfactant was investigated. By studying the process through the formation of Si-C bonds and the simultaneous fabrication of Si-C/Ge-C bonds, it was confirmed that fully-relaxed Ge thin films could be formed. Furthermore, it was found that the formation of Ge quantum dots in a self-assemble manner would be formed by the reconstruction of Si(100) surface into C(4x4) structure through the formation of Si-C bonds.
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Report
(4 results)
Research Products
(35 results)
