• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Formation of relaxed Ge thin films by surfactant mediation and its application to devices

Research Project

Project/Area Number 24246003
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTohoku University

Principal Investigator

WASHIO KATSUYOSHI  東北大学, 工学(系)研究科(研究院), 教授 (20417017)

Co-Investigator(Kenkyū-buntansha) SAKURABA Masao  東北大学, 電気通信研究所, 准教授 (30271993)
Project Period (FY) 2012-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥47,190,000 (Direct Cost: ¥36,300,000、Indirect Cost: ¥10,890,000)
Fiscal Year 2014: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2013: ¥13,780,000 (Direct Cost: ¥10,600,000、Indirect Cost: ¥3,180,000)
Fiscal Year 2012: ¥28,470,000 (Direct Cost: ¥21,900,000、Indirect Cost: ¥6,570,000)
Keywordsゲルマニウム / カーボン / サーファクタント / 緩和 / シリコン / 機能融合 / ドット / 自己組織 / 結晶成長 / 量子ドット / 電子デバイス / 光素子 / コミュニケーション
Outline of Final Research Achievements

To create function-merged devices, formation of fully-relaxed Ge thin films on Si substrate by using carbon as a surfactant was investigated. By studying the process through the formation of Si-C bonds and the simultaneous fabrication of Si-C/Ge-C bonds, it was confirmed that fully-relaxed Ge thin films could be formed. Furthermore, it was found that the formation of Ge quantum dots in a self-assemble manner would be formed by the reconstruction of Si(100) surface into C(4x4) structure through the formation of Si-C bonds.

Report

(4 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Annual Research Report
  • 2012 Annual Research Report
  • Research Products

    (35 results)

All 2015 2014 2013 Other

All Journal Article (5 results) (of which Peer Reviewed: 5 results,  Acknowledgement Compliant: 4 results) Presentation (30 results)

  • [Journal Article] Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top2015

    • Author(s)
      Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
    • Journal Title

      Journal of Crystal Growth

      Volume: 印刷中

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Transition of carbon binding states on Si(100) depending on substrate temperature and its effect on Ge growth2014

    • Author(s)
      Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
    • Journal Title

      Microelectronic Engineering

      Volume: 125 Pages: 14-17

    • DOI

      10.1016/j.mee.2013.12.023

    • Related Report
      2014 Annual Research Report 2013 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Formation of Ge quantum dots on Si substrate using consecutive deposition of Ge/C and in situ post annealing2014

    • Author(s)
      Shinji Hatakeyama, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
    • Journal Title

      Microelectronic Engineering

      Volume: 125 Pages: 28-32

    • DOI

      10.1016/j.mee.2013.12.026

    • Related Report
      2014 Annual Research Report 2013 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Mediation effect of sub-monolayer carbon on interfacial mixing in Ge growth on Si(100)2014

    • Author(s)
      Yuhki Itoh, Ryo Hayase, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
    • Journal Title

      Physica Status Solidi C

      Volume: 11 Issue: 11-12 Pages: 1556-1560

    • DOI

      10.1002/pssc.201400032

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Structural transition in Ge growth on Si mediated by sub-monolayer carbon2014

    • Author(s)
      Yuhki Itoh, Shinji Hatakeyama, Katsuyoshi Washio
    • Journal Title

      Thin Solid Films

      Volume: 557 Pages: 61-65

    • DOI

      10.1016/j.tsf.2013.10.095

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Presentation] Control of surface morphology in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-site post annealing2015

    • Author(s)
      Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
    • Organizer
      9th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Montreal, Canada
    • Year and Date
      2015-05-17 – 2015-05-22
    • Related Report
      2014 Annual Research Report
  • [Presentation] Effect of carbon reaction temperature with Si(100) on Ge dot morphology2015

    • Author(s)
      Yuhki Satoh, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
    • Organizer
      9th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Montreal, Canada
    • Year and Date
      2015-05-17 – 2015-05-22
    • Related Report
      2014 Annual Research Report
  • [Presentation] C/Ge/Si(100)構造におけるサブ原子層カーボンとGe成長温度のGe薄膜形成への影響2015

    • Author(s)
      伊藤友樹、畠山真慈、川島知之、鷲尾勝由
    • Organizer
      第62回 応用物理学会春季学術講演会
    • Place of Presentation
      東海大学、平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] サブ原子層カーボンを用いたGeドットのSi-C結合形成温度依存性に関する検討2015

    • Author(s)
      佐藤佑紀、伊藤友樹、川島知之、鷲尾勝由
    • Organizer
      第62回 応用物理学会春季学術講演会
    • Place of Presentation
      東海大学、平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] MBEを用いたSi(100)上2段階Ge薄膜成長における表面平坦化条件の検討2015

    • Author(s)
      早瀬凌、伊藤友樹、川島知之、鷲尾勝由
    • Organizer
      第62回 応用物理学会春季学術講演会
    • Place of Presentation
      東海大学、平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] アモルファスGe上のサブ原子層カーボンの熱処理を用いたSi(100)基板上のGe薄膜形成2015

    • Author(s)
      青山琢磨、伊藤友樹、畠山真慈、川島知之、鷲尾勝由
    • Organizer
      第62回 応用物理学会春季学術講演会
    • Place of Presentation
      東海大学、平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] Effect of sub-monolayer carbon on Ge/Si(100) layer on Ge dot formation2015

    • Author(s)
      Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
    • Organizer
      8th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Tohoku University, Sendai
    • Year and Date
      2015-01-29 – 2015-01-30
    • Related Report
      2014 Annual Research Report
  • [Presentation] Effect of Si(100)c(4×4) surface reconstruction on Ge dots formation2015

    • Author(s)
      Yuhki Satoh, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
    • Organizer
      8th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Tohoku University, Sendai
    • Year and Date
      2015-01-29 – 2015-01-30
    • Related Report
      2014 Annual Research Report
  • [Presentation] Formation of Ge dots on Si(100) using reaction between Ge and sub-monolayer carbon on top2014

    • Author(s)
      Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
    • Organizer
      Materials Today Asia 2014
    • Place of Presentation
      Hong Kong, China
    • Year and Date
      2014-12-09 – 2014-12-12
    • Related Report
      2014 Annual Research Report
  • [Presentation] Formation of Ge dots using stable Si(100)c(4×4) surface reconstructed by Si-C heterodimers2014

    • Author(s)
      Yuhki Satoh, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
    • Organizer
      Materials Today Asia 2014
    • Place of Presentation
      Hong Kong, China
    • Year and Date
      2014-12-09 – 2014-12-12
    • Related Report
      2014 Annual Research Report
  • [Presentation] サブ原子層カーボン/Geの反応を利用したSi(100)基板上Geドットの形成2014

    • Author(s)
      伊藤友樹、川島知之、鷲尾勝由
    • Organizer
      第69回 応用物理学会東北支部学術講演会
    • Place of Presentation
      東北大学、仙台市
    • Year and Date
      2014-12-04 – 2014-12-05
    • Related Report
      2014 Annual Research Report
  • [Presentation] Si-C結合によるc(4×4)表面再構成を利用したGeドットの堆積量依存性に関する検討2014

    • Author(s)
      佐藤佑紀、伊藤友樹、川島知之、鷲尾勝由
    • Organizer
      第69回 応用物理学会東北支部学術講演会
    • Place of Presentation
      東北大学、仙台市
    • Year and Date
      2014-12-04 – 2014-12-05
    • Related Report
      2014 Annual Research Report
  • [Presentation] Geバッファ層とサブ原子層カーボン導入によるGe/Siミキシングの抑制2014

    • Author(s)
      伊藤友樹、早瀬凌、畠山真慈、川島知之、鷲尾勝由
    • Organizer
      第75回 応用物理学会秋季学術講演会
    • Place of Presentation
      札幌市、北海道
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] サブ原子層カーボンを用いたSi基板上Ge薄膜の平坦性向上に関する検討2014

    • Author(s)
      畠山真慈、伊藤友樹、川島知之、鷲尾勝由
    • Organizer
      第75回 応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学、札幌市
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] MBEを用いたSi(100)基板上の2段階Ge薄膜成長2014

    • Author(s)
      早瀬凌、伊藤友樹、川島知之、鷲尾勝由
    • Organizer
      第75回 応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学、札幌市
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] Si-C結合を利用したGeドットの形成温度に関する検討2014

    • Author(s)
      佐藤佑紀、伊藤友樹、川島知之、鷲尾勝由
    • Organizer
      第75回 応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学、札幌市
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] Effects of sub-monolayer carbon reaction at Si surface on Ge dot growth on Si(100)2014

    • Author(s)
      Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
    • Organizer
      15th IUMRS-ICA
    • Place of Presentation
      Fukuoka University, Fukuoka
    • Year and Date
      2014-08-24 – 2014-08-30
    • Related Report
      2014 Annual Research Report
  • [Presentation] Effect of sub-monolayer carbon mediation on interfacial mixing in Ge growth on Si(100)2014

    • Author(s)
      Yuhki Itoh, Shinji Hatakeyama, Ryo Hayase, Tomoyuki Kawashima, Katsuyoshi Washio
    • Organizer
      E-MRS 2014 Spring Meeting
    • Place of Presentation
      Lille, France
    • Year and Date
      2014-05-26 – 2014-05-30
    • Related Report
      2014 Annual Research Report
  • [Presentation] Effect of carbon binding states on Ge growth on Si(100) substrate2014

    • Author(s)
      Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
    • Organizer
      7th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Related Report
      2013 Annual Research Report
  • [Presentation] Formation of Ge quantum dots using in-situ post annealing amorphous Ge/C structure2014

    • Author(s)
      Shinji Hatakeyama, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
    • Organizer
      7th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      Sendai
    • Related Report
      2013 Annual Research Report
  • [Presentation] サブモノレイヤカーボンによるGe/Siミキシングの抑制に関する検討2014

    • Author(s)
      伊藤 友樹, 早瀬 凌, 畠山 真慈, 川島 知之, 鷲尾 勝由
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      相模原市
    • Related Report
      2013 Annual Research Report
  • [Presentation] Si基板上アモルファスGe/Cのアニール処理によるGeドットの形成に関する検討2014

    • Author(s)
      畠山真慈, 伊藤友樹, 奥野颯, 川島知之, 鷲尾勝由
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      相模原市
    • Related Report
      2013 Annual Research Report
  • [Presentation] Si基板上での低温Ge薄膜成長2014

    • Author(s)
      早瀬 凌, 伊藤 友樹, 川島 知之, 鷲尾 勝由
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      相模原市
    • Related Report
      2013 Annual Research Report
  • [Presentation] Structural transition of Ge growth on Si induced by submonolayer carbon2013

    • Author(s)
      Yuhki Itoh, Shinji Hatakeyama, Takuya Matsuo, and Katsuyoshi Washio
    • Organizer
      8th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Fukuoka
    • Related Report
      2013 Annual Research Report
  • [Presentation] 異なる結合状態のカーボン・バッファ層を用いた Si基板上Ge薄膜成長2013

    • Author(s)
      伊藤友樹, 畠山真慈, 奥野颯, 鷲尾勝由
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      京田辺市
    • Related Report
      2013 Annual Research Report
  • [Presentation] Influence of submonolayer carbon coverage and deposition temperature on Ge growth on Si(100)2013

    • Author(s)
      Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
    • Organizer
      E-MRS 2013 FALL MEETING
    • Place of Presentation
      Warsaw, Porland
    • Related Report
      2013 Annual Research Report
  • [Presentation] Carbon-interfered growth of Ge quantum dots on Si substrate2013

    • Author(s)
      Shinji Hatakeyama, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
    • Organizer
      E-MRS 2013 FALL MEETING
    • Place of Presentation
      Warsaw, Porland
    • Related Report
      2013 Annual Research Report
  • [Presentation] Structural transition of Ge growth on Si induced by submonolayer carbon2013

    • Author(s)
      Yuhki Itoh, Shinji Hatakeyama, Takuya Matsuo, Katsuyoshi Washio
    • Organizer
      The 8th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      福岡
    • Related Report
      2012 Annual Research Report
  • [Presentation] カーボン・サーファクタントを用いたSi基板上の緩和Ge薄膜成長の検討

    • Author(s)
      伊藤友樹、畠山真慈、松尾拓哉、鷲尾勝由
    • Organizer
      応用物理学会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] カーボン・サブ単原子バッファ層を用いたSi基板上のGeドットの形成に関する検討

    • Author(s)
      畠山真慈、伊藤友樹、松尾拓哉、鷲尾勝由
    • Organizer
      応用物理学会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2012 Annual Research Report

URL: 

Published: 2013-05-15   Modified: 2019-07-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi