GaAsBi laser diodes with low temperature dependence of lasing wavelength

• Project/Area Number: 24246008
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Kyoto Institute of Technology
• Principal Investigator: MASAHIRO Yoshimoto 京都工芸繊維大学, 工芸科学研究科, 教授 (20210776)
• Co-Investigator(Renkei-kenkyūsha): OE Kunishige 京都工芸繊維大学, 名誉教授 (20303927)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥45,500,000 (Direct Cost: ¥35,000,000、Indirect Cost: ¥10,500,000); Fiscal Year 2014: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000); Fiscal Year 2013: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000); Fiscal Year 2012: ¥29,250,000 (Direct Cost: ¥22,500,000、Indirect Cost: ¥6,750,000)
• Keywords: レーザダイオード / III-V族半導体 / 半金属 / 分子線エピタキシー / レーザ / 結晶成長 / ビスマス / 局在準位 / 半金属半導体合金

Outline of Final Research Achievements

Molecular beam epitaxy (MBE) of GaAsBi and related alloys opens up a new path to exploit metastable alloys exhibiting a particular property such as luminescence with a temperature-insensitive wavelength. A surfactant-like effect of Bi atoms contributes an improvement in quality of GaAsBi under an extreme growth condition outside the conventional one for high-quality III-V semiconductors.
GaAsBi alloys with GaBi molar fractions up to 14.8% has been coherently grown on GaAs. GaAsBi emitted bright photoluminescence (PL) at a wavelength of 1.3 um without intensity degradation. The lasing emission of up to 1.2 and 1.05 um was demonstrated in photo- and electrically-pumped GaAsBi lasers, respectively at room temperature.

Research Products

• [Journal Article] Electrically pumped room-temperature operation of GaAs1-xBix laser diodes with low-temperature dependence of oscillation wavelength (2014)
  • Author(s): T. Fuyuki, K. Yoshida, R. Yoshioka, M. Yoshimoto
  • Journal Title: Appl. Phys. Express Volume: 7 Issue: 8 Pages: 082101-082101
  • DOI: 10.7567/apex.7.082101
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Long-wavelength emission in photo-pumped GaAs_<1-x>Bi_x laser with low temperature dependence of lasing wavelength (2013)
  • Author(s): Takuma Fuyuki, Ryo Yoshi oka, Kenji Yoshida and Masahiro Yoshimoto
  • Journal Title: Applied of Physics Letters Volume: 103 Issue: 20 Pages: 202105-202105
  • DOI: 10.1063/1.4830273
  • Peer Reviewed
• [Journal Article] GaAs1-xBixおよびGaAs/GaAs1-xBixヘテロ界面における局在準位 (2013)
  • Author(s): 冬木琢真、伊藤瑞記、角 浩輔、吉本昌広
  • Journal Title: 材料 Volume: 62 Pages: 672-678
  • NAID: 130003384103
  • Peer Reviewed
• [Journal Article] Quantitative estimation of density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy (2013)
  • Author(s): Masahiro Yoshimoto, Mizuki Itoh, Yoriko Tominaga, and Kunishige Oe
  • Journal Title: J. Cryst. Growth Volume: available online Pages: 73-76
  • DOI: 10.1016/j.jcrysgro.2012.12.157
  • Peer Reviewed
• [Journal Article] Interface States in p-Type GaAs/GaAs_1-xBix Heterostructure (2012)
  • Author(s): T. Fuyuki. S. Kashiyama, K. Oe, M. Yoshimoto
  • Journal Title: The Japanese Journal of Applied Physics Volume: 51 Issue: 11S Pages: 11PC02-11PC02
  • DOI: 10.1143/jjap.51.11pc02
  • Peer Reviewed
• [Journal Article] Study of the Deep Levels of a GaAs/p-GaAs_1-xBixHeterostructure Grown by Molecular Beam Epitaxy (2012)
  • Author(s): T. Fuyuki, S. Kashiyama, K. Oe, M. Yoshimoto
  • Journal Title: Materials Research Society Symposium Proceedings Volume: 1432 Pages: 27-32
  • DOI: 10.1557/opl.2012.904
  • Peer Reviewed
• [Presentation] GaAsBi Laser Diodes with Low Temperature Dependence of Lasing Wavelength (2015)
  • Author(s): M. Yoshimoto
  • Organizer: 6th International Workshop on Bismuth-Containing Semiconductors
  • Place of Presentation: Madison, Wisconsin, USA
  • Year and Date: 2015-07-19 – 2015-07-22
  • Invited
• [Presentation] Molecular beam epitaxy of GaAsBi and its application to laser diodes with low-temperature dependence of oscillation wavelength (2015)
  • Author(s): M. Yoshimoto
  • Organizer: 18th European Molecular Beam Epitaxy workshop
  • Place of Presentation: Canazei, Italy
  • Year and Date: 2015-03-15 – 2015-03-18
  • Invited
• [Presentation] 発振波長の低い温度依存性を有するGaAs1-xBixレーザダイオードの実現 (2014)
  • Author(s): 冬木琢真，吉田憲司，吉岡諒，吉本昌広
  • Organizer: 第７５回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学
  • Year and Date: 2014-09-17 – 2014-09-20
  • Invited
• [Presentation] Molecular Beam Epitaxy of Laser-quality GaAsBi (2014)
  • Author(s): R. Yoshioka, T. Fuyuki, K. Yoshida, M. Yoshimoto
  • Organizer: 8th International Conference on Molecular Beam Epitaxy (MBE 2014)
  • Place of Presentation: Flagstaff, Arizona, USA
  • Year and Date: 2014-09-07 – 2014-09-12
  • Invited
• [Presentation] 発振波長の低い温度依存性を有するGaAsBiレーザダイオードの実現 (2014)
  • Author(s): 冬木琢真、吉田憲司、吉岡 諒、吉本昌広
  • Organizer: 電子情報通信学会 信頼性/機構デバイス/電子部品・材料/光エレクトロニクス/レーザ・量子エレクトロニクス合同研究会
  • Place of Presentation: 小樽経済センター
  • Year and Date: 2014-08-21 – 2014-08-22
• [Presentation] Molecular beam epitaxy of GaAsBi and its lasing chracteristics (2014)
  • Author(s): M. Yoshimoto
  • Organizer: 6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA)
  • Place of Presentation: Leeds, UK
  • Year and Date: 2014-07-27 – 2014-08-01
  • Invited
• [Presentation] GaAsBi laser diodes fabricated by molecular beam epitaxy (2014)
  • Author(s): M. Yoshimoto, R. Yoshioka, K. Yoshida, and T. Fuyuki
  • Organizer: 5th International Workshop on Bismuth-Containing Semiconductors
  • Place of Presentation: Cork, Ireland
  • Year and Date: 2014-07-13 – 2014-07-16
• [Presentation] GaAsBi Laser Diodes with Low Temperature Dependence of Lasing Wavelength (2014)
  • Author(s): T. Fuyuki, R. Yoshioka, K. Yoshida, M. Yoshimoto
  • Organizer: Conference on Lasers and Electro-Optics (CLEO) 2014
  • Place of Presentation: San Jose, CA , USA
  • Year and Date: 2014-06-08 – 2014-06-13
• [Presentation] MBE成長GaAs1-xBixレーザダイオードの室温発振 (2014)
  • Author(s): 冬木琢真、吉田憲司、吉岡諒、吉本昌広
  • Organizer: 2014年春季 第61回応用物理学関係連合講演会
  • Place of Presentation: 相模原市
• [Presentation] レーザ発振を示すGaAs1-xBixのMBE成長と特性 (2014)
  • Author(s): 吉岡諒，冬木琢真，吉本昌広
  • Organizer: 2014年春季 第61回応用物理学関係連合講演会
  • Place of Presentation: 相模原市
• [Presentation] Long wavelength emission of GaAs1-xBix laser with low-temperature coefficient of lasing wavelength (2013)
  • Author(s): Takuma Fuyuki, and Masahiro Yoshimoto
  • Organizer: 40th International Symposium on Compound Semiconductors (ISCS2013), Kobe, Japan
  • Place of Presentation: 神戸
• [Presentation] Wavelength Extension of GaAs1-xBix Laser with Low Temperature Coefficient of Lasing Wavelength (2013)
  • Author(s): Takuma Fuyuki, and Masahiro Yoshimoto
  • Organizer: 4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
  • Place of Presentation: Arkansas, USA
• [Presentation] Localized states in GaAsBi and GaAs/GaAsBi heterostructures (2013)
  • Author(s): M. Yoshimoto and T. Fuyuki
  • Organizer: 4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
  • Place of Presentation: Arkansas, USA
  • Invited
• [Presentation] 発振波長の低温度依存性を有する光励起GaAsBiレーザの長波長化 (2013)
  • Author(s): 冬木琢真、 吉本昌広
  • Organizer: 第32回電子材料シンポジウム
  • Place of Presentation: 守山市
• [Presentation] 発振波長の低温度依存性を有する光励起GaAs1-xBixレーザの長波長化 (2013)
  • Author(s): 冬木琢真，吉本昌広
  • Organizer: 2013年春季 第60回応用物理学会学術講演会
  • Place of Presentation: 厚木市
• [Presentation] Quantitative estimation of the density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy (2012)
  • Author(s): Mizuki Itoh, Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto
  • Organizer: 17th International Conference on Molecular Beam Epitaxy (MBE2012)
  • Place of Presentation: 奈良
• [Presentation] High Hole Mobility in GaAs1-xBix Alloys (2012)
  • Author(s): Kosuke Kado, Mizuki Itoh, Yoriko Tominaga, Takuma Fuyuki, Kazuya Yamada, Kunishige Oe, Masahiro Yoshimoto
  • Organizer: 3rd International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
  • Place of Presentation: Victoria, Canada
• [Presentation] Interface States in GaAs/p-GaAsBi Heterointerface Using Admittance Spectroscopy (2012)
  • Author(s): Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto
  • Organizer: 3rd International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
  • Place of Presentation: Victoria, Canada
• [Presentation] Study of the Deep Levels of a GaAs/p-GaAs1-xBix Heterostructure Grown by Molecular Beam Epitaxy (2012)
  • Author(s): Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto
  • Organizer: 2012 Materials Reserch Society (MRS) Spring Meeting
  • Place of Presentation: San Francisco
• [Presentation] アドミタンス法によるGaAs/pGaAsBiヘテロ界面評価 (2012)
  • Author(s): 冬木琢真、柏山祥太, 尾江邦重, 吉本昌広
  • Organizer: 第31回電子材料シンポジウム
  • Place of Presentation: 守山市
• [Book] Bismuth-Containing Compounds (2013)
  • Author(s): Masahiro Yoshimoto, Takuma Fuyuki
  • Total Pages: 23
  • Publisher: Springer
• [Book] Molecular beam epitaxy of GaAsBi and related quaternary alloys" Chapter 8 in "Molecular Beam Epitaxy: From research to mass production" (2012)
  • Author(s): Masahiro Yoshimoto, Kunishige Oe
  • Total Pages: 12
  • Publisher: Elsevier Inc.