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GaAsBi laser diodes with low temperature dependence of lasing wavelength

Research Project

Project/Area Number 24246008
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKyoto Institute of Technology

Principal Investigator

MASAHIRO Yoshimoto  京都工芸繊維大学, 工芸科学研究科, 教授 (20210776)

Co-Investigator(Renkei-kenkyūsha) OE Kunishige  京都工芸繊維大学, 名誉教授 (20303927)
Project Period (FY) 2012-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥45,500,000 (Direct Cost: ¥35,000,000、Indirect Cost: ¥10,500,000)
Fiscal Year 2014: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2013: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000)
Fiscal Year 2012: ¥29,250,000 (Direct Cost: ¥22,500,000、Indirect Cost: ¥6,750,000)
Keywordsレーザダイオード / III-V族半導体 / 半金属 / 分子線エピタキシー / レーザ / 結晶成長 / ビスマス / 局在準位 / 半金属半導体合金
Outline of Final Research Achievements

Molecular beam epitaxy (MBE) of GaAsBi and related alloys opens up a new path to exploit metastable alloys exhibiting a particular property such as luminescence with a temperature-insensitive wavelength. A surfactant-like effect of Bi atoms contributes an improvement in quality of GaAsBi under an extreme growth condition outside the conventional one for high-quality III-V semiconductors.
GaAsBi alloys with GaBi molar fractions up to 14.8% has been coherently grown on GaAs. GaAsBi emitted bright photoluminescence (PL) at a wavelength of 1.3 um without intensity degradation. The lasing emission of up to 1.2 and 1.05 um was demonstrated in photo- and electrically-pumped GaAsBi lasers, respectively at room temperature.

Report

(4 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Annual Research Report
  • 2012 Annual Research Report
  • Research Products

    (28 results)

All 2015 2014 2013 2012

All Journal Article (6 results) (of which Peer Reviewed: 6 results,  Acknowledgement Compliant: 1 results) Presentation (20 results) (of which Invited: 6 results) Book (2 results)

  • [Journal Article] Electrically pumped room-temperature operation of GaAs1-xBix laser diodes with low-temperature dependence of oscillation wavelength2014

    • Author(s)
      T. Fuyuki, K. Yoshida, R. Yoshioka, M. Yoshimoto
    • Journal Title

      Appl. Phys. Express

      Volume: 7 Issue: 8 Pages: 082101-082101

    • DOI

      10.7567/apex.7.082101

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Long-wavelength emission in photo-pumped GaAs_<1-x>Bi_x laser with low temperature dependence of lasing wavelength2013

    • Author(s)
      Takuma Fuyuki, Ryo Yoshi oka, Kenji Yoshida and Masahiro Yoshimoto
    • Journal Title

      Applied of Physics Letters

      Volume: 103 Issue: 20 Pages: 202105-202105

    • DOI

      10.1063/1.4830273

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] GaAs1-xBixおよびGaAs/GaAs1-xBixヘテロ界面における局在準位2013

    • Author(s)
      冬木琢真、伊藤瑞記、角 浩輔、吉本昌広
    • Journal Title

      材料

      Volume: 62 Pages: 672-678

    • NAID

      130003384103

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Quantitative estimation of density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy2013

    • Author(s)
      Masahiro Yoshimoto, Mizuki Itoh, Yoriko Tominaga, and Kunishige Oe
    • Journal Title

      J. Cryst. Growth

      Volume: available online Pages: 73-76

    • DOI

      10.1016/j.jcrysgro.2012.12.157

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Interface States in p-Type GaAs/GaAs_1-xBix Heterostructure2012

    • Author(s)
      T. Fuyuki. S. Kashiyama, K. Oe, M. Yoshimoto
    • Journal Title

      The Japanese Journal of Applied Physics

      Volume: 51 Issue: 11S Pages: 11PC02-11PC02

    • DOI

      10.1143/jjap.51.11pc02

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Study of the Deep Levels of a GaAs/p-GaAs_1-xBixHeterostructure Grown by Molecular Beam Epitaxy2012

    • Author(s)
      T. Fuyuki, S. Kashiyama, K. Oe, M. Yoshimoto
    • Journal Title

      Materials Research Society Symposium Proceedings

      Volume: 1432 Pages: 27-32

    • DOI

      10.1557/opl.2012.904

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Presentation] GaAsBi Laser Diodes with Low Temperature Dependence of Lasing Wavelength2015

    • Author(s)
      M. Yoshimoto
    • Organizer
      6th International Workshop on Bismuth-Containing Semiconductors
    • Place of Presentation
      Madison, Wisconsin, USA
    • Year and Date
      2015-07-19 – 2015-07-22
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Molecular beam epitaxy of GaAsBi and its application to laser diodes with low-temperature dependence of oscillation wavelength2015

    • Author(s)
      M. Yoshimoto
    • Organizer
      18th European Molecular Beam Epitaxy workshop
    • Place of Presentation
      Canazei, Italy
    • Year and Date
      2015-03-15 – 2015-03-18
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] 発振波長の低い温度依存性を有するGaAs1-xBixレーザダイオードの実現2014

    • Author(s)
      冬木琢真,吉田憲司,吉岡諒,吉本昌広
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Molecular Beam Epitaxy of Laser-quality GaAsBi2014

    • Author(s)
      R. Yoshioka, T. Fuyuki, K. Yoshida, M. Yoshimoto
    • Organizer
      8th International Conference on Molecular Beam Epitaxy (MBE 2014)
    • Place of Presentation
      Flagstaff, Arizona, USA
    • Year and Date
      2014-09-07 – 2014-09-12
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] 発振波長の低い温度依存性を有するGaAsBiレーザダイオードの実現2014

    • Author(s)
      冬木琢真、吉田憲司、吉岡 諒、吉本昌広
    • Organizer
      電子情報通信学会 信頼性/機構デバイス/電子部品・材料/光エレクトロニクス/レーザ・量子エレクトロニクス合同研究会
    • Place of Presentation
      小樽経済センター
    • Year and Date
      2014-08-21 – 2014-08-22
    • Related Report
      2014 Annual Research Report
  • [Presentation] Molecular beam epitaxy of GaAsBi and its lasing chracteristics2014

    • Author(s)
      M. Yoshimoto
    • Organizer
      6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA)
    • Place of Presentation
      Leeds, UK
    • Year and Date
      2014-07-27 – 2014-08-01
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] GaAsBi laser diodes fabricated by molecular beam epitaxy2014

    • Author(s)
      M. Yoshimoto, R. Yoshioka, K. Yoshida, and T. Fuyuki
    • Organizer
      5th International Workshop on Bismuth-Containing Semiconductors
    • Place of Presentation
      Cork, Ireland
    • Year and Date
      2014-07-13 – 2014-07-16
    • Related Report
      2014 Annual Research Report
  • [Presentation] GaAsBi Laser Diodes with Low Temperature Dependence of Lasing Wavelength2014

    • Author(s)
      T. Fuyuki, R. Yoshioka, K. Yoshida, M. Yoshimoto
    • Organizer
      Conference on Lasers and Electro-Optics (CLEO) 2014
    • Place of Presentation
      San Jose, CA , USA
    • Year and Date
      2014-06-08 – 2014-06-13
    • Related Report
      2014 Annual Research Report
  • [Presentation] MBE成長GaAs1-xBixレーザダイオードの室温発振2014

    • Author(s)
      冬木琢真、吉田憲司、吉岡諒、吉本昌広
    • Organizer
      2014年春季 第61回応用物理学関係連合講演会
    • Place of Presentation
      相模原市
    • Related Report
      2013 Annual Research Report
  • [Presentation] レーザ発振を示すGaAs1-xBixのMBE成長と特性2014

    • Author(s)
      吉岡諒,冬木琢真,吉本昌広
    • Organizer
      2014年春季 第61回応用物理学関係連合講演会
    • Place of Presentation
      相模原市
    • Related Report
      2013 Annual Research Report
  • [Presentation] Long wavelength emission of GaAs1-xBix laser with low-temperature coefficient of lasing wavelength2013

    • Author(s)
      Takuma Fuyuki, and Masahiro Yoshimoto
    • Organizer
      40th International Symposium on Compound Semiconductors (ISCS2013), Kobe, Japan
    • Place of Presentation
      神戸
    • Related Report
      2013 Annual Research Report
  • [Presentation] Wavelength Extension of GaAs1-xBix Laser with Low Temperature Coefficient of Lasing Wavelength2013

    • Author(s)
      Takuma Fuyuki, and Masahiro Yoshimoto
    • Organizer
      4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
    • Place of Presentation
      Arkansas, USA
    • Related Report
      2013 Annual Research Report
  • [Presentation] Localized states in GaAsBi and GaAs/GaAsBi heterostructures2013

    • Author(s)
      M. Yoshimoto and T. Fuyuki
    • Organizer
      4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
    • Place of Presentation
      Arkansas, USA
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] 発振波長の低温度依存性を有する光励起GaAsBiレーザの長波長化2013

    • Author(s)
      冬木琢真、 吉本昌広
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      守山市
    • Related Report
      2013 Annual Research Report
  • [Presentation] 発振波長の低温度依存性を有する光励起GaAs1-xBixレーザの長波長化2013

    • Author(s)
      冬木琢真,吉本昌広
    • Organizer
      2013年春季 第60回応用物理学会学術講演会
    • Place of Presentation
      厚木市
    • Related Report
      2012 Annual Research Report
  • [Presentation] Quantitative estimation of the density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy2012

    • Author(s)
      Mizuki Itoh, Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      17th International Conference on Molecular Beam Epitaxy (MBE2012)
    • Place of Presentation
      奈良
    • Related Report
      2012 Annual Research Report
  • [Presentation] High Hole Mobility in GaAs1-xBix Alloys2012

    • Author(s)
      Kosuke Kado, Mizuki Itoh, Yoriko Tominaga, Takuma Fuyuki, Kazuya Yamada, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      3rd International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
    • Place of Presentation
      Victoria, Canada
    • Related Report
      2012 Annual Research Report
  • [Presentation] Interface States in GaAs/p-GaAsBi Heterointerface Using Admittance Spectroscopy2012

    • Author(s)
      Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      3rd International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
    • Place of Presentation
      Victoria, Canada
    • Related Report
      2012 Annual Research Report
  • [Presentation] Study of the Deep Levels of a GaAs/p-GaAs1-xBix Heterostructure Grown by Molecular Beam Epitaxy2012

    • Author(s)
      Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      2012 Materials Reserch Society (MRS) Spring Meeting
    • Place of Presentation
      San Francisco
    • Related Report
      2012 Annual Research Report
  • [Presentation] アドミタンス法によるGaAs/pGaAsBiヘテロ界面評価2012

    • Author(s)
      冬木琢真、柏山祥太, 尾江邦重, 吉本昌広
    • Organizer
      第31回電子材料シンポジウム
    • Place of Presentation
      守山市
    • Related Report
      2012 Annual Research Report
  • [Book] Bismuth-Containing Compounds2013

    • Author(s)
      Masahiro Yoshimoto, Takuma Fuyuki
    • Total Pages
      23
    • Publisher
      Springer
    • Related Report
      2013 Annual Research Report
  • [Book] Molecular beam epitaxy of GaAsBi and related quaternary alloys" Chapter 8 in "Molecular Beam Epitaxy: From research to mass production"2012

    • Author(s)
      Masahiro Yoshimoto, Kunishige Oe
    • Total Pages
      12
    • Publisher
      Elsevier Inc.
    • Related Report
      2012 Annual Research Report

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Published: 2013-05-15   Modified: 2019-07-29  

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