| Budget Amount *help |
¥47,060,000 (Direct Cost: ¥36,200,000、Indirect Cost: ¥10,860,000)
Fiscal Year 2014: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2013: ¥13,260,000 (Direct Cost: ¥10,200,000、Indirect Cost: ¥3,060,000)
Fiscal Year 2012: ¥25,740,000 (Direct Cost: ¥19,800,000、Indirect Cost: ¥5,940,000)
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| Outline of Final Research Achievements |
The development of high-power deep-ultraviolet light-emitting diodes (DUV-LEDs) is quite an important subject because they are required for a wide variety of applications, such as sterilization, water purification, medicine and biochemistry. However, high-power operation of a DUV-LED fabricated on a sapphire substrate is difficult because of a large series resistance due to a lateral-injection and a low light-extraction efficiency (LEE). The purpose of this work is to realize a high-power DUV-LED by fabricating a vertical-type large-area LED device on a silicon (Si) substrate.
We demonstrated high-quality AlN buffer layers with no surface cracks by fabricating them on patterned Si substrates. We obtained milli-watt power operations of DUV-LEDs fabricating on the high-quality AlN layer grown on the patterned substrates. We also achieved significant increase of LEE of DUV LED by introducing a transparent p-type AlGaN contact layer and a highly-reflective electrode.
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