New Dopants for Creation of Next Generation Functional Silicon Devices
| Project/Area Number |
24246017
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
MIKI Kazushi 国立研究開発法人物質・材料研究機構, 高分子材料ユニット, グループリーダー (30354335)
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| Co-Investigator(Kenkyū-buntansha) |
FUKATSU Susumu 東京大学, 総合文化研究科, 教授 (60199164)
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| Project Period (FY) |
2012-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥44,850,000 (Direct Cost: ¥34,500,000、Indirect Cost: ¥10,350,000)
Fiscal Year 2014: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
Fiscal Year 2013: ¥27,170,000 (Direct Cost: ¥20,900,000、Indirect Cost: ¥6,270,000)
Fiscal Year 2012: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000)
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| Keywords | ドーパント / エピタキシャル成長 / ナノ構造 / EXAFS / レーザアニール / シリコン / アニール |
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| Outline of Final Research Achievements |
In the Si LSI technology, substitutional structures of the dopant atoms into the silicon crystal as ionized local electronic states have been used to be carrier sources. For development of quantum information processing devices and spintronics devices which become now popular topics, substitutional structures of the heavy metal atoms into the silicon crystal as ionized or not ionized local electronic states should be a need to be spin sources.
By utilizing the specificity of heavy metal nanostructures, the research and development of high concentration of spin source impurities δ doping was carried out. High concentration in the spin source impurities δ -doped was achieved for bismuth and manganese elements. The results of this study, the high concentration impurity δ doping technique of bismuth and manganese, is expected to be seeds for creating a new silicon-based spintronic devices.
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Report
(4 results)
Research Products
(38 results)
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[Presentation] Mn Doping into Si2013
Author(s)
Takashi Kanazawa, Koichi Murata,Satoshi Tsubomatsu and Kazushi Miki
Organizer
The international workshop on Science and Patents (IWP)
Place of Presentation
つくば市
Year and Date
2013-09-06
Related Report
Invited
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