| Budget Amount *help |
¥44,850,000 (Direct Cost: ¥34,500,000、Indirect Cost: ¥10,350,000)
Fiscal Year 2014: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
Fiscal Year 2013: ¥27,170,000 (Direct Cost: ¥20,900,000、Indirect Cost: ¥6,270,000)
Fiscal Year 2012: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000)
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| Outline of Final Research Achievements |
In the Si LSI technology, substitutional structures of the dopant atoms into the silicon crystal as ionized local electronic states have been used to be carrier sources. For development of quantum information processing devices and spintronics devices which become now popular topics, substitutional structures of the heavy metal atoms into the silicon crystal as ionized or not ionized local electronic states should be a need to be spin sources.
By utilizing the specificity of heavy metal nanostructures, the research and development of high concentration of spin source impurities δ doping was carried out. High concentration in the spin source impurities δ -doped was achieved for bismuth and manganese elements. The results of this study, the high concentration impurity δ doping technique of bismuth and manganese, is expected to be seeds for creating a new silicon-based spintronic devices.
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