| Budget Amount *help |
¥45,890,000 (Direct Cost: ¥35,300,000、Indirect Cost: ¥10,590,000)
Fiscal Year 2015: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2014: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2013: ¥19,760,000 (Direct Cost: ¥15,200,000、Indirect Cost: ¥4,560,000)
Fiscal Year 2012: ¥15,730,000 (Direct Cost: ¥12,100,000、Indirect Cost: ¥3,630,000)
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| Outline of Final Research Achievements |
For a fixture device of wafer in semiconductor process under vacuum and high- temperature condition, we worked on development of a functional electro-adhesive surface with micro texture in this study. By impregnating three dimensional micro-mesh structure with an adhesive elastomer, an electro-adhesive surface (EAS) regularly generating numerous adhesive spots on the surface according to applied electric field was successfully developed. From the experiment, it is clear that EAS with one-sided patterned electrodes is able to fix a Si wafer with electro-adhesive effect and works in high-vacuum environment. In addition, the performance of EAS is enhanced at high temperature up to 150 degree Celsius. These results represents high applicability of EAS to a fixture device in high-vacuum and high-temperature process.
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