Advancement of Filtered Arc Deposition System and Fabrication and Processing of High-Quality Hydrogen-Free DLC Films
| Project/Area Number |
24246048
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (A)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Power engineering/Power conversion/Electric machinery
|
|---|
| Research Institution | Toyohashi University of Technology |
|---|
Principal Investigator |
TAKIKAWA Hirofumi 豊橋技術科学大学, 工学(系)研究科(研究院), 教授 (90226952)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
KIYOHARA Syuji 舞鶴工業高等専門学校, 電子制御工学科, 准教授 (40299326)
KANEKO Satoru 神奈川県産業技術センター, その他部局等, 研究員 (40426359)
YAMADA Kenji 石川工業高等専門学校, 電気情報工学科, 准教授 (50249778)
HABUCHI Hitoe 岐阜工業高等専門学校, 電子情報工学科, 准教授 (90270264)
TANOUE Hideto 北九州工業高等専門学校, 電気電子工学科, 講師 (50580578)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
SUDA Yoshiyuki 豊橋技術科学大学, 工学研究科, 准教授 (70301942)
SHIBATA Takayuki 豊橋技術科学大学, 工学研究科, 教授 (10235575)
KAWASHIMA Takahiro 豊橋技術科学大学, 工学研究科, 准教授 (50378270)
|
|---|
| Project Period (FY) |
2012-04-01 – 2015-03-31
|
| Project Status |
Completed (Fiscal Year 2014)
|
| Budget Amount *help |
¥47,060,000 (Direct Cost: ¥36,200,000、Indirect Cost: ¥10,860,000)
Fiscal Year 2014: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000)
Fiscal Year 2013: ¥11,570,000 (Direct Cost: ¥8,900,000、Indirect Cost: ¥2,670,000)
Fiscal Year 2012: ¥23,790,000 (Direct Cost: ¥18,300,000、Indirect Cost: ¥5,490,000)
|
|---|
| Keywords | フィルタードアーク蒸着 / ダイヤモンドライクカーボ ン膜 / 微細加工 / ナノテクノロジー / パターニング / エッチング / MEMS / ダイヤモンドライクカーボン膜 / 高品質化 / 前処理 / 均一成膜 / 膜厚制御 / 異物フリー技術 / くし形微細加工 |
|---|
| Outline of Final Research Achievements |
In this research, the filtered arc plasma beam deposition system and technique were developed, constructed and established for the fabrication of high-quality hydrogen-free amorphous carbon (a-C) film had uniform thickness on 4-inch Si wafer. The techniques to control pure-carbon plasma beam and substrate holder motion were developed to achieve a-C films had uniform thickness. The thickness change of a-C film on Si wafer was inhibited below 5% in 500 nm thickness. In addition, the variations of the film properties for the deposition conditions of a-C films were clarified, and the primary knowledge for the processing of hydrogen-free a-C films was achieved. The fabricated high-quality a-C films on Si wafers are expected as the functional substrates for MEMS.
|
Report
(4 results)
Research Products
(53 results)
-
[Journal Article] Expansion of lattice constants of aluminum nitride thin film prepared on sapphire substrate by ECR plasma sputtering method2014
Author(s)
S Kaneko, H Torii, T Amazawa, T Ito, M Yasui, M Kurouchi, A Fukushima, T Tokumasu, S Lee, S Park, H Takikawa, M Yoshimoto
-
Journal Title
Japanese Journal of Applied Physics
Volume: 53
Issue: 11S
Pages: 11RA11-11RA11
DOI
NAID
Related Report
Peer Reviewed / Open Access / Acknowledgement Compliant
-
-
-
-
-
-
-
[Journal Article] Fabrication of Micro-OLEDs by Room-temperature Curing Contact-imprint Using DLC Molds2013
Author(s)
I. Ishikawa, K. Sakurai, S. Kiyohara, C. Ito, H. Tanoue, Y. Suda, H. Takikawa, Y. Taguchi, Y. Sugiyama, Y. Omata, Y. Kurashima
-
Journal Title
Mater. Res. Soc. Symp. Proc.
Volume: Vol.1511
DOI
Related Report
Peer Reviewed
-
-
-
[Presentation] Dry engraving of metales nameplates using cutter with super DLC coat2015
Author(s)
Y. Fujii, Y. Miyamoto, Y. Suda, H. Takikawa, H. Tanoue, M. Kamiya, M, Taki, Y. Hasegawa, N. Tsuji
Organizer
IS Plasma 2015
Place of Presentation
Nagoya, Japan
Year and Date
2015-03-27 – 2015-03-30
Related Report
-
-
-
-
-
-
-
-
-
-
-
-
-
[Presentation] Properties of epitaxial AlN thin film deposited onsapphire substrate by ECR plasma2013
Author(s)
S. Kaneko, T. Ito, M. Yasui, M. Kurouchi, T. Nagano, H. Torii, T. Amazawa, L. Seughwan, S. Park, A. Fukushima, T. Tikumasu, H. Takikawa
Organizer
6th International Conference on Advanced Infocomm Technology (ICAIT)
Place of Presentation
Hsinchu, Taiwan
Related Report
Invited
-
-
[Presentation] Variation of lattice constants in MgO film prepared in oxidizing atmosphere2013
Author(s)
S. Kaneko, H. Torii, T. Ito, M. Yasui, A. Fukushima, T. Tokumasu, S. Park, T. Endo H. Takikawa, M. Yoshimoto
Organizer
23rd annual meeting MRS-J, International Symposium
Place of Presentation
Yokohama, Japan
Related Report
Invited
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
