| Project/Area Number |
24246048
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Power engineering/Power conversion/Electric machinery
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| Research Institution | Toyohashi University of Technology |
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Principal Investigator |
TAKIKAWA Hirofumi 豊橋技術科学大学, 工学(系)研究科(研究院), 教授 (90226952)
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| Co-Investigator(Kenkyū-buntansha) |
KIYOHARA Syuji 舞鶴工業高等専門学校, 電子制御工学科, 准教授 (40299326)
KANEKO Satoru 神奈川県産業技術センター, その他部局等, 研究員 (40426359)
YAMADA Kenji 石川工業高等専門学校, 電気情報工学科, 准教授 (50249778)
HABUCHI Hitoe 岐阜工業高等専門学校, 電子情報工学科, 准教授 (90270264)
TANOUE Hideto 北九州工業高等専門学校, 電気電子工学科, 講師 (50580578)
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| Co-Investigator(Renkei-kenkyūsha) |
SUDA Yoshiyuki 豊橋技術科学大学, 工学研究科, 准教授 (70301942)
SHIBATA Takayuki 豊橋技術科学大学, 工学研究科, 教授 (10235575)
KAWASHIMA Takahiro 豊橋技術科学大学, 工学研究科, 准教授 (50378270)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥47,060,000 (Direct Cost: ¥36,200,000、Indirect Cost: ¥10,860,000)
Fiscal Year 2014: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000)
Fiscal Year 2013: ¥11,570,000 (Direct Cost: ¥8,900,000、Indirect Cost: ¥2,670,000)
Fiscal Year 2012: ¥23,790,000 (Direct Cost: ¥18,300,000、Indirect Cost: ¥5,490,000)
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| Keywords | フィルタードアーク蒸着 / ダイヤモンドライクカーボ ン膜 / 微細加工 / ナノテクノロジー / パターニング / エッチング / MEMS / ダイヤモンドライクカーボン膜 / 高品質化 / 前処理 / 均一成膜 / 膜厚制御 / 異物フリー技術 / くし形微細加工 |
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| Outline of Final Research Achievements |
In this research, the filtered arc plasma beam deposition system and technique were developed, constructed and established for the fabrication of high-quality hydrogen-free amorphous carbon (a-C) film had uniform thickness on 4-inch Si wafer. The techniques to control pure-carbon plasma beam and substrate holder motion were developed to achieve a-C films had uniform thickness. The thickness change of a-C film on Si wafer was inhibited below 5% in 500 nm thickness. In addition, the variations of the film properties for the deposition conditions of a-C films were clarified, and the primary knowledge for the processing of hydrogen-free a-C films was achieved. The fabricated high-quality a-C films on Si wafers are expected as the functional substrates for MEMS.
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