Thin film deposition based on reducing activity of nanosiicon ballistic electron emitter
Project/Area Number |
24246053
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Research Category |
Grant-in-Aid for Scientific Research (A)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
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Research Institution | Tokyo University of Agriculture and Technology |
Principal Investigator |
KOSHIDA NOBUYOSHI 東京農工大学, 工学(系)研究科(研究院), 名誉教授 (50143631)
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Co-Investigator(Kenkyū-buntansha) |
SHIRAKSHI Junichi 東京農工大学, 大学院工学研究院, 准教授 (00315657)
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Project Period (FY) |
2012-04-01 – 2015-03-31
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Project Status |
Completed (Fiscal Year 2014)
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Budget Amount *help |
¥46,670,000 (Direct Cost: ¥35,900,000、Indirect Cost: ¥10,770,000)
Fiscal Year 2014: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2013: ¥15,210,000 (Direct Cost: ¥11,700,000、Indirect Cost: ¥3,510,000)
Fiscal Year 2012: ¥25,870,000 (Direct Cost: ¥19,900,000、Indirect Cost: ¥5,970,000)
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Keywords | ナノシリコン / 弾道電子放出 / 還元効果 / 薄膜堆積 / 薄膜デバイス / 還元 / プリンティング / 薄膜素子 / 電解還元 / 電子・電気材料 / 電子デバイス・機器 / シリコンナノドット / 弾道電子 / 電解還元効果 / 超薄膜 / 表面・界面物性 |
Outline of Final Research Achievements |
Fundamental studies have been conducted for developing an alternative liquid-phase thin-film deposition technique based on the reducing activity of nanosilicon ballistic electron emitter. From electrochemical analyses of ballistic electron injection into salt solutions, it was confirmed that a unilateral reduction proceeds in different way from either conventional electroplating or electron-beam-induced decomposition. As a consequence, thin metal and semiconductor (Si, Ge, and SiGe) films are uniformly deposited on the emitting surface. The deposition rate was formulated by modeling the mechanism. The structural and compositional characterizations of deposited thin films verified the usefulness of this deposition scheme as a contamination-free room-temperature process. Further technological potential was demonstrated for thin Cu films under a printing mode in which the ballistic electrons impinge upon solution-coated target substrate arranged in parallel with a small space.
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Report
(4 results)
Research Products
(63 results)
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[Journal Article] Development of Ballistic Hot Electron Emitter and its Applications to Parallel Processing: Active-Matrix Massive Direct-Write Lithography in Vacuum and Thin Films Deposition in Solutions2015
Author(s)
N. Koshida, A. Kojima, N. Ikegami, R. Suda, M. Yagi, J. Shirakashi, T. Yoshida, H. Miyaguchi, M. Muroyama, H. Nishino, S. Yoshida, M. Sugata, K. Totsu, and M. Esashi
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Journal Title
Proc. SPIE Symp. on Advanced Lithography)
Volume: 9423
DOI
Related Report
Peer Reviewed / Acknowledgement Compliant
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[Journal Article] Development of maskless electron-beam lithography using nc-Si electron-emitter array2013
Author(s)
A. Kojima, N. Ikegami, T. Yoshida, H. Miyaguchi, M. Muroyama, H. Nishino, S. Yoshida, M. Sugata, S. Cakir, H. Ohyi, N. Koshida, and M. Esashi
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Journal Title
Proc. SPIE Symp. on Advanced Lithography
Volume: 8680
DOI
Related Report
Peer Reviewed
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[Presentation] Applications of Nanosilicon Ballistic Electron Emitter to Nanofabrication Process2015
Author(s)
N. Koshida, R. Suda, M. Yagi, J. Shirakashi, A. Kojima, N. Ikegami, T. Yoshida, H. Miyaguchi, M. Muroyama, S. Yoshida, K. Totsu, and M. Esashi
Organizer
Int. IEEE Conf. on Nanotechnology
Place of Presentation
Rome, Italy
Year and Date
2015-07-27 – 2015-07-31
Related Report
Invited
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[Presentation] Low-Temperature Deposition of Thin Si, Ge, and SiGe Films Using Reducing Activity of Ballistic Hot Electrons2014
Author(s)
N. Koshida, R. Suda, M. Yagi, A. Kojima, R. Mentek, B. Gelloz, N. Mori, and J. Shirakashi
Organizer
Electrochem. Soc. Int. Symp. on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
Place of Presentation
Cancun, Mexico
Year and Date
2014-10-07
Related Report
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[Presentation] Deposition of Thin Si, Ge, and SiGe Films by Ballistic Electro-Reduction2014
Author(s)
N. Koshida, R. Suda, M. Yagi, A. Kojima, R. Mentek, B. Gelloz, N. Mori, and J. Shirakashi
Organizer
The 15th Int. Union of Mater. Res. Soc., Int. Conf. in Asia 2014
Place of Presentation
福岡大学(福岡市城南区)
Year and Date
2014-08-26
Related Report
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[Presentation] Ballistic electro-deposion of thin Si, Ge, and SiGe films
Author(s)
R. Suda, M. Ito, M.Yagi, A. Kojima, R. Mentek, N. Mori, J. Shirakashi, and N. Koshida
Organizer
Int. Conf. Solid State Devices and Materials
Place of Presentation
Hilton Fukuoka Sea Hawk, Fukuoka, Japan
Related Report
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