| Budget Amount *help |
¥46,670,000 (Direct Cost: ¥35,900,000、Indirect Cost: ¥10,770,000)
Fiscal Year 2014: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2013: ¥15,210,000 (Direct Cost: ¥11,700,000、Indirect Cost: ¥3,510,000)
Fiscal Year 2012: ¥25,870,000 (Direct Cost: ¥19,900,000、Indirect Cost: ¥5,970,000)
|
|---|
| Outline of Final Research Achievements |
Fundamental studies have been conducted for developing an alternative liquid-phase thin-film deposition technique based on the reducing activity of nanosilicon ballistic electron emitter. From electrochemical analyses of ballistic electron injection into salt solutions, it was confirmed that a unilateral reduction proceeds in different way from either conventional electroplating or electron-beam-induced decomposition. As a consequence, thin metal and semiconductor (Si, Ge, and SiGe) films are uniformly deposited on the emitting surface. The deposition rate was formulated by modeling the mechanism. The structural and compositional characterizations of deposited thin films verified the usefulness of this deposition scheme as a contamination-free room-temperature process. Further technological potential was demonstrated for thin Cu films under a printing mode in which the ballistic electrons impinge upon solution-coated target substrate arranged in parallel with a small space.
|
