| Project/Area Number |
24246054
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya University |
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Principal Investigator |
SEIICHI Miyazaki 名古屋大学, 工学(系)研究科(研究院), 教授 (70190759)
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| Co-Investigator(Kenkyū-buntansha) |
MAKIHARA Katsunori 名古屋大学, 大学院工学研究科, 准教授 (90553561)
村上 秀樹 広島大学, 先端物質科学研究科, 助教 (70314739)
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| Co-Investigator(Renkei-kenkyūsha) |
MURAKAMI Hideki 広島大学, 大学院先端物質科学研究科, 助教 (70314739)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥46,930,000 (Direct Cost: ¥36,100,000、Indirect Cost: ¥10,830,000)
Fiscal Year 2014: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
Fiscal Year 2013: ¥14,950,000 (Direct Cost: ¥11,500,000、Indirect Cost: ¥3,450,000)
Fiscal Year 2012: ¥23,010,000 (Direct Cost: ¥17,700,000、Indirect Cost: ¥5,310,000)
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| Keywords | Si系量子ドット / スーパーアトム / Si量子ドット / 発光ダイオード / 量子ドット / 配列制御 |
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| Outline of Final Research Achievements |
Si-QDs with doped Ge core were self-assembled on thermally grown SiO2. PL spectra peaked at ~0.70 eV were observed, even at room temperature. The observed PL band suggested that radiative recombination of photo-generated carriers through quantized states of the Ge core is the dominant pathway for the emission from the dots, reflecting the type II energy band discontinuity between the Si clad and Ge core. We also found that, for P-delta doping to the Ge core, an ionized P donor is responsible for the efficient PL from the P-doped Ge core Si-QDs. In addition, multiple-stacked Si-QDs with ultrathin SiO2 interlayers were formed on ultrathin SiO2 layers. The kinetic energy of emitted electrons shows a peak at ~2.5 eV and less dependent on applied bias but a bias dependent tail toward the higher energy side. These results suggest that ballistical tunneling from the second and/or third topmost Si-QDs is maily responsible for observed electron emission.
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