| Project/Area Number |
24246103
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Physical properties of metals
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
OHNO Yutaka 東北大学, 金属材料研究所, 准教授 (80243129)
TOKUMOTO Yuki 東北大学, 金属材料研究所, 助教 (20546866)
KUTSUKAKE Kentaro 東北大学, 金属材料研究所, 助教 (00463975)
DEURA Momoko 東北大学, 金属材料研究所, 助教 (90609299)
沓掛 健太朗 東北大学, 金属材料研究所, 助教 (00463795)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥47,840,000 (Direct Cost: ¥36,800,000、Indirect Cost: ¥11,040,000)
Fiscal Year 2014: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
Fiscal Year 2013: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
Fiscal Year 2012: ¥32,500,000 (Direct Cost: ¥25,000,000、Indirect Cost: ¥7,500,000)
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| Keywords | 半導体物性 / 転位ナノ物性 / ワイドギャップ半導体 / 転位動特性 / 転位電子光学物性 / 転位電子光学特性 |
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| Outline of Final Research Achievements |
In various wide bandgap semiconductors as III-nitrides, II-VI zinc compounds and IV-IV compounds, dislocations are one of the detrimental defects affecting the device functions and at present, crucial for controlling in order to improve device efficiencies. Thus, various intrinsic properties of dislocations in the semiconductors were comprehensively investigated in terms of dynamic, electrical and optical properties together with the atomic structures and discussed a new ability to functional devices.
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