| Budget Amount *help |
¥46,410,000 (Direct Cost: ¥35,700,000、Indirect Cost: ¥10,710,000)
Fiscal Year 2014: ¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2013: ¥12,350,000 (Direct Cost: ¥9,500,000、Indirect Cost: ¥2,850,000)
Fiscal Year 2012: ¥17,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥3,990,000)
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| Outline of Final Research Achievements |
In this project, continuing to thermal plasmas and low-temperature plasmas, plasmas with the third range of gas temperatures Tg<373K including plasma gas temperatures below freezing point have been studied in order to create cryoplasma materials prrocess science. In the following, we call this plasma “cryoplasma” to distinguish it from conventional thermal and low-temperature plasmas. For example, we have studied continuous gas temperature-dependent generation of a cryoplasma jet in a broader temperature range from 350K down to 20 K. The variou plasma diagnostics, such as probe method, optical emission method, laser absorption method and laser interferometry, have also be performed to estimate the various plasma properties, such as electron density and temperature. Moreover, as one example of plasma processing at cryogenic temperatures to resist to thermal damages, porous materials ashing process in the field of semicounductor device processing has been developed and studied.
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