| Budget Amount *help |
¥17,940,000 (Direct Cost: ¥13,800,000、Indirect Cost: ¥4,140,000)
Fiscal Year 2014: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2013: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2012: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
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| Outline of Final Research Achievements |
A SiC-JFET Power Module for the accelerator cell driver has been developed, which is a novel innovative device that has the scheme of 2 in 1 construction of 2.4 kV high voltage JFET and that have the heat exhaust capacity of kW range.
The performance evaluation tests exhibit that the device has the heat exhaust capability of 400 W, the value of which is twice higher than the conventional device and that the switching performance is better than the conventional device. Also a prototype switching power supply utilizing the developed device was assembled, which proved the capability of equivalent 1 MHz operation.
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