| Budget Amount *help |
¥20,410,000 (Direct Cost: ¥15,700,000、Indirect Cost: ¥4,710,000)
Fiscal Year 2014: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2013: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2012: ¥12,090,000 (Direct Cost: ¥9,300,000、Indirect Cost: ¥2,790,000)
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| Outline of Final Research Achievements |
An automated and high-throughput atomistic model generator has been developed, targeting three-dimensional oxide/semiconductor interface structures. This work is aiming to build a foundation of the researches and developments of the rapidly emerging three-dimensional electronic devices. It can provide realistic atomistic models for various electric and thermal transport simulations. As an example, the thermal conductivity of a silicon nanowire has been studied, and the origin of the peculiar thermal property has been clarified.
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