| Budget Amount *help |
¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
Fiscal Year 2014: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2013: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2012: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
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| Outline of Final Research Achievements |
Ionic liquid-gated graphene field-effect-transistors were fabricated to generate a band gap in bilayer graphene by applying an effective electric field. From measurements of electrical characteristics as a function of temperature, a band gap of 235 meV was created in bilayer graphene. Electronic states and phonon energies in bilayer graphene were also investigated by electrical and optical measurements under an external electric field, which was controlled by applying bias voltages to a bottom gate and a transparent ionic liquid side gate in a field-effect transistor. The symmetric and antisymmetric optical phonons were visible in the Raman scattering spectra. Moreover, a simple method of directly synthesizing graphene on dielectric surfaces was demonstrated using simple annealing or laser irradiation without a carbon source gas. Gaphene field-effect-transistors were fabricated using these methods.
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