Research on ultrafine GaN nanowall light-emitting devices having InGaN quantum active layer
| Project/Area Number |
24310106
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Sophia University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
KISHINO Katsumi 上智大学, 理工学部, 教授 (90134824)
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| Project Period (FY) |
2012-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥20,020,000 (Direct Cost: ¥15,400,000、Indirect Cost: ¥4,620,000)
Fiscal Year 2015: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2014: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2013: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2012: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
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| Keywords | ナノ光デバイス / 量子構造 / 化合物半導体 / ナノ結晶 / ナノ加工 / 窒化物半導体 / 発光ダイオード / エッチング / ＧａＮ / ナノウォール / ナノコラム / GaN |
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| Outline of Final Research Achievements |
Based on GaN nanowall crystal, we aimed to develop ultrafine GaN nanostructures approaching the limit of artificial fabrication limit (< 50 nm in width), and application technology for optoelectronic devices. We have developed a low-damage GaN etching technique of hydrogen environment anisotropic thermal etching (HEATE), fabricated InGaN/GaN nanowalls and nanopillars with lateral dimension of 30 nm, demonstrated room temperature current injection blue-color emission from InGaN/GaN nano-LEDs, and realized GaN nanopillars with smallest diameter of 10 nm. The research goal have been achieved.
We also obtained unplanned results of the high performance transparent conductive film with a high average transmittance of 88.2% (315-780 nm) and low sheet resistance of 7.6 ohm/sq., and development of a solution based deposition technique named "nano-mist deposition (NMD)" for functional thin films.
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Report
(5 results)
Research Products
(70 results)
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[Presentation] Lasing action in floated connection type AlGaN microdisks2015
Author(s)
Sho Suzuki, Tetsuya Kouno, Hoshi Takeshima, Akihiko Kikuchi, Katsumi Kishino, Masaru Sakai, and Kazuhiko Hara
Organizer
The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
Place of Presentation
Act City Hamamatsu, Hamamatsu, Shizuoka, Japan
Year and Date
2015-11-08
Related Report
Int'l Joint Research
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