| Budget Amount *help |
¥19,760,000 (Direct Cost: ¥15,200,000、Indirect Cost: ¥4,560,000)
Fiscal Year 2014: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2013: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2012: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000)
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| Outline of Final Research Achievements |
In this study, we measured the force and electric current as well as their dependences on the applied bias voltage and the separation between two bodies, which were brought closer and in contact using a lab-made system of noncontact atomic force microscopy combined with scanning tunneling microscopy. From the obtained results, we discussed the effects of collapse of tunneling barrier during the process of bond formation between them. For the covalent bond between Si atoms, we analyzed the relationship between the strength of the covalent bond and the tunneling current by applying the bias voltage between a tip and a Si sample, while the surface states on both sides were energetically tuned under the bias voltage, leading to a quantum mechanical resonating state. For an H-terminated Si adatom and a Si atom on the tip, we measured the strength of hydrogen bond between them, and evaluated the binding energy of the hydrogen bond.
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