| Budget Amount *help |
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2014: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000)
Fiscal Year 2013: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
Fiscal Year 2012: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
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| Outline of Final Research Achievements |
Nano-second dynamic crystallization temperature of phase change material, Ge2Sb2Te5 and GeTe were investigated using experiments with step-wise pulse and FEM simulations. After melting, crystallization of the materials were measured with resistance to obtain the crystallization yields from the change. The crystallization temperatures were estimated by associating these data. While the pulse width of 300ns was required for complete crystallization of Ge2Sb2Te5, 40 ns was for the complete crystallization of GeTe. Furthermore, while the crystallization temperature of Ge2Sb2Te5 of about 320 C was estimated at 100ns-pulse width, the temperature of GeTe of about 180 C was estimated at 40 ns. The temperatures increased as the pulse widths were short. It is clear that GeTe has fast mobile atoms from amorphous to crystal state compared with Ge2Sb2Te5 We can estimate crystallization temperature in a range of nano second using this method.
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