Generation and control of quantum correlated photons from atomic-layer doped semiconductors

• Project/Area Number: 24360004
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Saitama University
• Principal Investigator: YAGUCHI Hiroyuki 埼玉大学, 理工学研究科, 教授 (50239737)
• Co-Investigator(Kenkyū-buntansha): ONABE Kentaro 東京大学, 大学院新領域創成科学研究科, 教授 (50204227) ; KATAYAMA Ryuji 東北大学, 金属材料研究所, 准教授 (40343115) ; KUBOYA Shigeyuki 東北大学, 金属材料研究所, 助教 (70583615)
• Co-Investigator(Renkei-kenkyūsha): HIJIKATA Yasuto 埼玉大学, 大学院理工学研究科, 准教授 (70322021) ; YAGI Shuhei 埼玉大学, 大学院理工学研究科, 助教 (30421415) ; AKIYAMA Hidefumi 東京大学, 物性研究所, 准教授 (40251491)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥19,240,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥4,440,000); Fiscal Year 2014: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000); Fiscal Year 2013: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000); Fiscal Year 2012: ¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000)
• Keywords: 半導体 / 光物性 / エピタキシャル成長 / 量子光学 / 単一光子 / 量子もつれ光子対 / 半導体物性 / MBE、エピタキシャル / 応用光学・量子光光学 / 応用光学・量子光工学 / 励起子分子 / 原子層ドーピング / 等電子トラップ

Outline of Final Research Achievements

We have grown nitrogen and erbium atomic-layer doped semiconductors to obtain unpolarized single photons and quantum-entangled photon pairs with highly reproducible wavelengths, which play a key role in the quantum information science. We have successfully observed completely unpolarized biexciton and exciton emission lines, which are suitable for the application to polarization-entangled photon pairs. We have quantitatively studied the temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy, and found that overlayer growth at low temperatures is effective in suppressing the surface segregation and obtaining atomic-layer doped structures.

Research Products

• [Journal Article] Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy (2015)
  • Author(s): R. G. Jin, S. Yagi, Y. Hijikata, and H. Yaguchi
  • Journal Title: Japanese Journal of Applied Physics Volume: 54 Issue: 5 Pages: 051201-051201
  • DOI: 10.7567/jjap.54.051201
  • NAID: 210000145121
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] First-principles study on the conduction band electron states of GaAsN alloys (2014)
  • Author(s): K. Sakamoto and H. Yaguchi
  • Journal Title: Physica Status Solidi C Volume: 11 Issue: 3-4 Pages: 911-913
  • DOI: 10.1002/pssc.201300531
  • Peer Reviewed
• [Journal Article] Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys (2014)
  • Author(s): W. Okubo, S. Yagi, Y. Hijikata, K. Onabe, and H. Yaguchi
  • Journal Title: Physica Status Solidi A Volume: 211 Issue: 4 Pages: 752-755
  • DOI: 10.1002/pssa.201300462
  • Peer Reviewed
• [Journal Article] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates (2013)
  • Author(s): RG Jin, S Yagi, Y Hijikata, S Kuboya, K Onabe, R Katayama, H Yaguchi
  • Journal Title: Journal of Crystal Growth Volume: 378 Pages: 85-87
  • DOI: 10.1016/j.jcrysgro.2012.12.043
  • Peer Reviewed
• [Journal Article] Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs (2013)
  • Author(s): Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
  • Journal Title: THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 Volume: 1566 (1) Pages: 538-539
  • DOI: 10.1063/1.4848523
  • Peer Reviewed
• [Journal Article] Biexciton Luminescence from Individual Isoelectronic Traps in NitrogenDelta-DopedGaAs (2012)
  • Author(s): K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
  • Journal Title: Appl. Phys. Express Volume: 5 Issue: 11 Pages: 111201-111201
  • DOI: 10.1143/apex.5.111201
  • Peer Reviewed
• [Presentation] 第一原理計算によるInAsN混晶のバンド構造に関する研究 (2015)
  • Author(s): 宮崎貴史, 八木修平, 土方泰斗, 矢口裕之
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学(神奈川県・平塚市)
  • Year and Date: 2015-03-13
• [Presentation] Luminescence and Quenching Properties in GaPN Revealed by Below-Gap Excitation (2014)
  • Author(s): M. Suetsugu, A. Z. M. Touhidul Islam, T. Hanaoka, T. Fukuda, N. Kamata, S. Yagi, and H. Yaguchi
  • Organizer: The 14th International Symposium on the Science and Technology of Lighting
  • Place of Presentation: コモ(イタリア)
  • Year and Date: 2014-06-23
• [Presentation] Anomalous excitation power dependence of the luminescence from GaAsN/GaAs quantum well (2014)
  • Author(s): Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, H. Yaguchi
  • Organizer: The 41st International Symposium on Compound Semiconductors
  • Place of Presentation: モンペリエ(フランス)
  • Year and Date: 2014-05-12
• [Presentation] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates (2012)
  • Author(s): R. G. Jin, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
  • Organizer: 17th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: 奈良県新公会堂(奈良県)
  • Year and Date: 2012-09-24
• [Presentation] MBE法によるGaAs(001)基板上へのErGaAs混晶の成長 (2012)
  • Author(s): 金日国, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学(愛媛県)
  • Year and Date: 2012-09-12
• [Presentation] 窒素δドープGaAs中の単一等電子トラップからの発光のフォトルミネッセンス励起分光測定 (2012)
  • Author(s): 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学(愛媛県)
  • Year and Date: 2012-09-12
• [Presentation] 第一原理計算によるGaAsNの電子構造に対する原子配置の影響に関する研究 (2012)
  • Author(s): 坂元圭, 八木修平, 土方泰斗, 矢口裕之
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学(愛媛県)
  • Year and Date: 2012-09-12
• [Presentation] Biexciton Emission from Single Isoelectronic Traps Formed by Nitrogen-Nitrogen Pairs in GaAs (2012)
  • Author(s): K. Takamiya, T. Fukushima. S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe. R. Katayama, and H. Yaguchi
  • Organizer: 31st International Conference on the Physics of Semiconductors
  • Place of Presentation: スイス連邦工科大学チューリッヒ校(スイス)
  • Year and Date: 2012-08-02
• [Presentation] First Principles Study on the Effect of the Position of Nitrogen Atoms on the Electronic Structure of GaAsN (2012)
  • Author(s): K. Sakamoto and H. Yaguchi
  • Organizer: 31st International Conference on the Physics of Semiconductors
  • Place of Presentation: スイス連邦工科大学チューリッヒ校(スイス)
  • Year and Date: 2012-07-31
• [Presentation] Photoreflectance Study of the Temperature Dependence of Excitonic Transitions in Dilute GaAsN Alloys
  • Author(s): W. Okubo, S. Yagi, Y. Hijikata, K. Onabe and H. Yaguchi
  • Organizer: 10th International Conference on Nitride Semiconductors 2013
  • Place of Presentation: ゲイロード・ナショナル・リゾート・アンド・コンベンション・センター（アメリカ合衆国）
• [Presentation] First Principles Study on the Conduction Band Electron States of GaAsN Alloys
  • Author(s): K. Sakamoto and H. Yaguchi
  • Organizer: 10th International Conference on Nitride Semiconductors 2013
  • Place of Presentation: ゲイロード・ナショナル・リゾート・アンド・コンベンション・センター（アメリカ合衆国）
• [Presentation] 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定
  • Author(s): 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学（京都府）
• [Presentation] 第一原理計算によるGaAsN混晶の伝導帯の解析に関する研究
  • Author(s): 坂本圭, 矢口裕之
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学（京都府）
• [Presentation] Excitation power dependence of the emission from various N-N pairs in N δ-doped GaAs
  • Author(s): K. Takamiya, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe, and H. Yaguchi
  • Organizer: 4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
  • Place of Presentation: UCLAコンファレンス・センター（アメリカ合衆国）