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Generation and control of quantum correlated photons from atomic-layer doped semiconductors

Research Project

Project/Area Number 24360004
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypePartial Multi-year Fund
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionSaitama University

Principal Investigator

YAGUCHI Hiroyuki  埼玉大学, 理工学研究科, 教授 (50239737)

Co-Investigator(Kenkyū-buntansha) ONABE Kentaro  東京大学, 大学院新領域創成科学研究科, 教授 (50204227)
KATAYAMA Ryuji  東北大学, 金属材料研究所, 准教授 (40343115)
KUBOYA Shigeyuki  東北大学, 金属材料研究所, 助教 (70583615)
Co-Investigator(Renkei-kenkyūsha) HIJIKATA Yasuto  埼玉大学, 大学院理工学研究科, 准教授 (70322021)
YAGI Shuhei  埼玉大学, 大学院理工学研究科, 助教 (30421415)
AKIYAMA Hidefumi  東京大学, 物性研究所, 准教授 (40251491)
Project Period (FY) 2012-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥19,240,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥4,440,000)
Fiscal Year 2014: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2013: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2012: ¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000)
Keywords半導体 / 光物性 / エピタキシャル成長 / 量子光学 / 単一光子 / 量子もつれ光子対 / 半導体物性 / MBE、エピタキシャル / 応用光学・量子光光学 / 応用光学・量子光工学 / 励起子分子 / 原子層ドーピング / 等電子トラップ
Outline of Final Research Achievements

We have grown nitrogen and erbium atomic-layer doped semiconductors to obtain unpolarized single photons and quantum-entangled photon pairs with highly reproducible wavelengths, which play a key role in the quantum information science. We have successfully observed completely unpolarized biexciton and exciton emission lines, which are suitable for the application to polarization-entangled photon pairs. We have quantitatively studied the temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy, and found that overlayer growth at low temperatures is effective in suppressing the surface segregation and obtaining atomic-layer doped structures.

Report

(4 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Annual Research Report
  • 2012 Annual Research Report
  • Research Products

    (20 results)

All 2015 2014 2013 2012 Other

All Journal Article (6 results) (of which Peer Reviewed: 6 results,  Acknowledgement Compliant: 1 results) Presentation (14 results)

  • [Journal Article] Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy2015

    • Author(s)
      R. G. Jin, S. Yagi, Y. Hijikata, and H. Yaguchi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 5 Pages: 051201-051201

    • DOI

      10.7567/jjap.54.051201

    • NAID

      210000145121

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] First-principles study on the conduction band electron states of GaAsN alloys2014

    • Author(s)
      K. Sakamoto and H. Yaguchi
    • Journal Title

      Physica Status Solidi C

      Volume: 11 Issue: 3-4 Pages: 911-913

    • DOI

      10.1002/pssc.201300531

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys2014

    • Author(s)
      W. Okubo, S. Yagi, Y. Hijikata, K. Onabe, and H. Yaguchi
    • Journal Title

      Physica Status Solidi A

      Volume: 211 Issue: 4 Pages: 752-755

    • DOI

      10.1002/pssa.201300462

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2013

    • Author(s)
      RG Jin, S Yagi, Y Hijikata, S Kuboya, K Onabe, R Katayama, H Yaguchi
    • Journal Title

      Journal of Crystal Growth

      Volume: 378 Pages: 85-87

    • DOI

      10.1016/j.jcrysgro.2012.12.043

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs2013

    • Author(s)
      Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
    • Journal Title

      THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012

      Volume: 1566 (1) Pages: 538-539

    • DOI

      10.1063/1.4848523

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Biexciton Luminescence from Individual Isoelectronic Traps in NitrogenDelta-DopedGaAs2012

    • Author(s)
      K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
    • Journal Title

      Appl. Phys. Express

      Volume: 5 Issue: 11 Pages: 111201-111201

    • DOI

      10.1143/apex.5.111201

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Presentation] 第一原理計算によるInAsN混晶のバンド構造に関する研究2015

    • Author(s)
      宮崎貴史, 八木修平, 土方泰斗, 矢口裕之
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学(神奈川県・平塚市)
    • Year and Date
      2015-03-13
    • Related Report
      2014 Annual Research Report
  • [Presentation] Luminescence and Quenching Properties in GaPN Revealed by Below-Gap Excitation2014

    • Author(s)
      M. Suetsugu, A. Z. M. Touhidul Islam, T. Hanaoka, T. Fukuda, N. Kamata, S. Yagi, and H. Yaguchi
    • Organizer
      The 14th International Symposium on the Science and Technology of Lighting
    • Place of Presentation
      コモ(イタリア)
    • Year and Date
      2014-06-23
    • Related Report
      2014 Annual Research Report
  • [Presentation] Anomalous excitation power dependence of the luminescence from GaAsN/GaAs quantum well2014

    • Author(s)
      Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, H. Yaguchi
    • Organizer
      The 41st International Symposium on Compound Semiconductors
    • Place of Presentation
      モンペリエ(フランス)
    • Year and Date
      2014-05-12
    • Related Report
      2014 Annual Research Report
  • [Presentation] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2012

    • Author(s)
      R. G. Jin, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
    • Organizer
      17th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      奈良県新公会堂(奈良県)
    • Year and Date
      2012-09-24
    • Related Report
      2012 Annual Research Report
  • [Presentation] MBE法によるGaAs(001)基板上へのErGaAs混晶の成長2012

    • Author(s)
      金日国, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Year and Date
      2012-09-12
    • Related Report
      2012 Annual Research Report
  • [Presentation] 窒素δドープGaAs中の単一等電子トラップからの発光のフォトルミネッセンス励起分光測定2012

    • Author(s)
      高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Year and Date
      2012-09-12
    • Related Report
      2012 Annual Research Report
  • [Presentation] 第一原理計算によるGaAsNの電子構造に対する原子配置の影響に関する研究2012

    • Author(s)
      坂元圭, 八木修平, 土方泰斗, 矢口裕之
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Year and Date
      2012-09-12
    • Related Report
      2012 Annual Research Report
  • [Presentation] Biexciton Emission from Single Isoelectronic Traps Formed by Nitrogen-Nitrogen Pairs in GaAs2012

    • Author(s)
      K. Takamiya, T. Fukushima. S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe. R. Katayama, and H. Yaguchi
    • Organizer
      31st International Conference on the Physics of Semiconductors
    • Place of Presentation
      スイス連邦工科大学チューリッヒ校(スイス)
    • Year and Date
      2012-08-02
    • Related Report
      2012 Annual Research Report
  • [Presentation] First Principles Study on the Effect of the Position of Nitrogen Atoms on the Electronic Structure of GaAsN2012

    • Author(s)
      K. Sakamoto and H. Yaguchi
    • Organizer
      31st International Conference on the Physics of Semiconductors
    • Place of Presentation
      スイス連邦工科大学チューリッヒ校(スイス)
    • Year and Date
      2012-07-31
    • Related Report
      2012 Annual Research Report
  • [Presentation] Photoreflectance Study of the Temperature Dependence of Excitonic Transitions in Dilute GaAsN Alloys

    • Author(s)
      W. Okubo, S. Yagi, Y. Hijikata, K. Onabe and H. Yaguchi
    • Organizer
      10th International Conference on Nitride Semiconductors 2013
    • Place of Presentation
      ゲイロード・ナショナル・リゾート・アンド・コンベンション・センター(アメリカ合衆国)
    • Related Report
      2013 Annual Research Report
  • [Presentation] First Principles Study on the Conduction Band Electron States of GaAsN Alloys

    • Author(s)
      K. Sakamoto and H. Yaguchi
    • Organizer
      10th International Conference on Nitride Semiconductors 2013
    • Place of Presentation
      ゲイロード・ナショナル・リゾート・アンド・コンベンション・センター(アメリカ合衆国)
    • Related Report
      2013 Annual Research Report
  • [Presentation] 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定

    • Author(s)
      高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学(京都府)
    • Related Report
      2013 Annual Research Report
  • [Presentation] 第一原理計算によるGaAsN混晶の伝導帯の解析に関する研究

    • Author(s)
      坂本圭, 矢口裕之
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学(京都府)
    • Related Report
      2013 Annual Research Report
  • [Presentation] Excitation power dependence of the emission from various N-N pairs in N δ-doped GaAs

    • Author(s)
      K. Takamiya, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe, and H. Yaguchi
    • Organizer
      4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      UCLAコンファレンス・センター(アメリカ合衆国)
    • Related Report
      2013 Annual Research Report

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Published: 2012-04-24   Modified: 2019-07-29  

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