| Budget Amount *help |
¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000)
Fiscal Year 2014: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2013: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000)
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| Outline of Final Research Achievements |
Nonradiative recombination (NRR) centers and trap centers which result in efficiency reduction and shortening of operating lifetime were detected based on the method of two-wavelength excited photoluminescence (TWEPL) by improving below-gap excitation (BGE) light sources. We attained first optical detection of NRR centers in AlGaN-MQWs, InAlGaN-MQWs for deep-UV LEDs and derived a set of NRR parameters. Trap centers and NRR centers in Ba3Si6O12N2:Eu2+ (BSON) phosphor were detected by thermo-luminescence and the TWEPL for the first time. The former cause transient component of the BGE effect, while the latter cause the steady state component.
In summary, a comprehensive detection and analysis of defect states in light emitting materials has been attained based on an improved TWEPL method.
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