Preparation of low dislocation density and deep-UV transparent AlN substrates by hydride vapor phase epitaxy

• Project/Area Number: 24360006
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tokyo University of Agriculture and Technology
• Principal Investigator: KUMAGAI Yoshinao 東京農工大学, 工学(系)研究科(研究院), 教授 (20313306)
• Co-Investigator(Kenkyū-buntansha): MURAKAMI Hisashi 東京農工大学, 大学院工学研究院, 准教授 (90401455)
• Research Collaborator: SITAR Zlatko North Carolina State University, Department of Materials Science and Engineering, Professor ; NAGASHIMA Toru 株式会社トクヤマ, 筑波研究所, 主任
• Project Period (FY): 2012-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000); Fiscal Year 2014: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000); Fiscal Year 2013: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000); Fiscal Year 2012: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
• Keywords: 窒化アルミニウム / 転位密度 / 深紫外光透過性 / HVPE法 / 不純物 / 深紫外線LED / MOVPE法 / 昇華法 / 深紫外発光ダイオード

Outline of Final Research Achievements

Homo-epitaxial growth of thick AlN layers by hydride vapor phase epitaxy (HVPE) was investigated on low dislocation density (< 1000 /cm2) AlN wafers prepared by physical vapor transport (PVT). AlN wafers prepared from HVPE layers had high structural quality identical to that of the PVT-AlN wafers and deep-UV transparency with an optical cutoff at 206.5 nm. The development of deep-UV transparency was found to be related to lower concentration of carbon impurity in the HVPE-AlN wafers. Strong electroluminescence (EL) peaking at 268 nm from deep-UV LEDs fabricated by metal-organic chemical vapor deposition (MOCVD) on the HVPE-AlN wafers could be extracted through the HVPE-AlN wafers.

Research Products

• [Journal Article] The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN (2014)
  • Author(s): B. E. Gaddy, Z. Bryan, I. Bryan, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, R. Kirste, Z. Sitar, R. Collazo, and D. L. Irving
  • Journal Title: Applied Physics Letters Volume: 104 Issue: 20
  • DOI: 10.1063/1.4878657
  • Peer Reviewed
• [Journal Article] Vacancy defects in UV-transparent HVPE-AlN (2014)
  • Author(s): T. Kuittinen, F. Tuomisto, Y. Kumagai, T. Nagashima, T. Kinoshita, A. Koukitu, R. Collazo, and Z. Sitar
  • Journal Title: Physica Status Solidi (c) Volume: 11 Issue: 3-4 Pages: 405-407
  • DOI: 10.1002/pssc.201300529
  • Peer Reviewed
• [Journal Article] High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H2 and N2 (2013)
  • Author(s): Kazushiro Nomura, Shoko Hanagata, Atsushi Kunisaki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Issue: 8S Pages: 08JB10-08JB10
  • DOI: 10.7567/jjap.52.08jb10
  • Peer Reviewed
• [Journal Article] Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy (2013)
  • Author(s): T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, B. Moody, S. Mita, S. Inoue, Y. Kumagai, A. Koukitu, and Z. Sitar
  • Journal Title: Applied Physics Express Volume: 6 Issue: 9 Pages: 092103-092103
  • DOI: 10.7567/apex.6.092103
  • Peer Reviewed
• [Journal Article] Vacancy compensation and related donor-acceptor pair recombination in bulk AlN (2013)
  • Author(s): B. E. Gaddy, Z. Bryan, I. Bryan, R. Kirste, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, Z. Sitar, R. Collazo, and D. L. Irving
  • Journal Title: Applied Physics Letters Volume: 103 Issue: 16
  • DOI: 10.1063/1.4824731
  • Peer Reviewed
• [Journal Article] On the origin of the 265 nm absorption band in AlN bulk crystals (2012)
  • Author(s): Ram Collazo
  • Journal Title: Applied Physics Letters Volume: 100 Issue: 19 Pages: 1919141-5
  • DOI: 10.1063/1.4717623
  • Peer Reviewed
• [Journal Article] Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport (2012)
  • Author(s): Yoshinao Kumagai
  • Journal Title: Applied Physics Express Volume: 5 Issue: 5 Pages: 0555041-3
  • DOI: 10.1143/apex.5.055504
  • Peer Reviewed
• [Journal Article] Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport (2012)
  • Author(s): Toru Nagashima
  • Journal Title: Applied Physics Express Volume: 5 Issue: 12 Pages: 1255011-3
  • DOI: 10.1143/apex.5.125501
  • Peer Reviewed
• [Journal Article] Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy (2012)
  • Author(s): Toru Kinoshita
  • Journal Title: Applied Physics Express Volume: 5 Issue: 12 Pages: 1221011-3
  • DOI: 10.1143/apex.5.122101
  • Peer Reviewed
• [Presentation] High-purity and highly-transparent AlN bulk crystal growth for UVC LED application by HVPE (2015)
  • Author(s): Y. Kumagai, T. Nagashima, T. Kinoshita, R. Togashi, R. Yamamoto, B. Moody, H. Murakami, R. Collazo, A. Koukitu and Z. Sitar
  • Organizer: 2015 Photonics West
  • Place of Presentation: The Moscone Center, San Francisco, California, U.S.A.
  • Year and Date: 2015-02-09
  • Invited
• [Presentation] Predicted Properties of Point Defects and Complexes in AlN and AlGaN (2014)
  • Author(s): B. E. Gaddy, Z. Bryan, I. Bryan, R. Kirste, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, R. Collazo, Z. Sitar and D. L. Irving
  • Organizer: 2014 MRS Fall Meeting and Exhibit
  • Place of Presentation: Hynes Convention Center, Boston, Massachusetts, U.S.A.
  • Year and Date: 2014-12-04
• [Presentation] HVPE法によるAlN/sapphireテンプレート上へのSiドープAlN成長の検討 (2014)
  • Author(s): 田中凌平，東城俊介，額賀俊成，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
  • Organizer: 応用物理学会第3回結晶工学未来塾
  • Place of Presentation: 学習院創立百周年記念会館（東京都豊島区）
  • Year and Date: 2014-11-13
• [Presentation] Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy (2014)
  • Author(s): 木下亨，小幡俊之，永島徹，柳裕之，Baxter Moody，三田清二，井上振一郎，熊谷義直，纐纈明伯，Zlatko Sitar
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス（北海道札幌市）
  • Year and Date: 2014-09-18
  • Invited
• [Presentation] AlNのHVPE高温ホモエピタキシャル成長における基板昇降温時表面劣化の原因 (2014)
  • Author(s): 東城俊介，田中凌平，額賀俊成，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス（北海道札幌市）
  • Year and Date: 2014-09-17
• [Presentation] Characterizing The Role of Point Defects and Complexes in UV Absorption and Emission in AlN (2014)
  • Author(s): B. E. Gaddy, Z. A. Bryan, I. S. Bryan, R. Kirste, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, R. Collazo, Z. Sitar and D. L. Irving
  • Organizer: International Workshop on Nitride Semiconductors 2014
  • Place of Presentation: Centennial Hall, Wroclaw, Poland
  • Year and Date: 2014-08-27
• [Presentation] Growth of AlN by Hydride Vapor Phase Epitaxy (2014)
  • Author(s): Y. Kumagai, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, A. Koukitu and Z. Sitar
  • Organizer: International Workshop on Nitride Semiconductors 2014
  • Place of Presentation: Centennial Hall, Wroclaw, Poland
  • Year and Date: 2014-08-26
  • Invited
• [Presentation] Growth of Si-Doped AlN Layers by Hydride Vapor Phase Epitaxy (2014)
  • Author(s): R. Tanaka, S. Tojo, T. Nukaga, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, Y. Kumagai, A. Koukitu and Z. Sitar
  • Organizer: International Workshop on Nitride Semiconductors 2014
  • Place of Presentation: Centennial Hall, Wroclaw, Poland
  • Year and Date: 2014-08-26
• [Presentation] Investigation of Ambient Gas after High-Temperature Growth of AlN by Hydride Vapor Phase Epitaxy (2014)
  • Author(s): S. Tojo, R. Tanaka, T. Nukaga, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, Y. Kumagai, A. Koukitu and Z. Sitar
  • Organizer: International Workshop on Nitride Semiconductors 2014
  • Place of Presentation: Centennial Hall, Wroclaw, Poland
  • Year and Date: 2014-08-26
• [Presentation] HVPE法によるAlN単結晶自立基板の作製とそのデバイス応用 (2014)
  • Author(s): 熊谷義直，永島徹，木下亨，村上尚，纐纈明伯
  • Organizer: 日本結晶成長学会ナノ構造・エピタキシャル成長分科会 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学天白キャンパス（愛知県名古屋市）
  • Year and Date: 2014-07-25
  • Invited
• [Presentation] AlN高温HVPE成長における基板昇降温プロセスが表面に与える影響 (2014)
  • Author(s): 東城俊介，田中凌平，額賀俊成，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
  • Organizer: 日本結晶成長学会ナノ構造・エピタキシャル成長分科会 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学天白キャンパス（愛知県名古屋市）
  • Year and Date: 2014-07-25
• [Presentation] AlN/sapphireテンプレート上へのSiドープAlN層のHVPE成長の検討 (2014)
  • Author(s): 田中凌平，東城俊介，額賀俊成，富樫理恵，永島徹，木下亨，Baxter Moody，村上尚，Ramon Collazo，熊谷義直，纐纈明伯，Zlatko Sitar
  • Organizer: 日本結晶成長学会ナノ構造・エピタキシャル成長分科会 第6回窒化物半導体結晶成長講演会
  • Place of Presentation: 名城大学天白キャンパス（愛知県名古屋市）
  • Year and Date: 2014-07-25
• [Presentation] MOCVD growth of AlGaN alloy for DUV-LEDs (2014)
  • Author(s): T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, B. Moody, S. Inoue, Y. Kumagai, A. Koukitu, R. Collazo, and Z. Sitar
  • Organizer: 17th International Conference on Metalorganic Vapor Phase Epitaxy
  • Place of Presentation: EPFL, Lausanne, Switzerland
  • Year and Date: 2014-07-15
  • Invited
• [Presentation] Deep UV-LEDs Fabricated of on HVPE-AlN Substrates (2014)
  • Author(s): T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, B. Moody, R. Collazo, S. Inoue, Y. Kumagai, A. Koukitu and Z. Sitar
  • Organizer: 5th International Symposium on Growth of III-Nitrides
  • Place of Presentation: The Westin Peachtree Plaza, Atlanta, Georgia, U.S.A.
  • Year and Date: 2014-05-21
  • Invited
• [Presentation] Hydride Vapor Phase Epitaxy and Doping of AlN (2014)
  • Author(s): Y. Kumagai, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, A. Koukitu and Z. Sitar
  • Organizer: 5th International Symposium on Growth of III-Nitrides
  • Place of Presentation: The Westin Peachtree Plaza, Atlanta, Georgia, U.S.A.
  • Year and Date: 2014-05-19
  • Invited
• [Presentation] Deep ultraviolet light-emitting diodes fabricated on AIN substrates prepared by hydride vapor phase epitaxy (2013)
  • Author(s): T, Kinoshita, K, Hironaka, T, Obata, T, Nagashima, R, F, Dalmau, R, Schlesser, B, Moody, J, Xie, S, Inoue, Y, Kumagai, A, Koukitu, Z, Sitar
  • Organizer: 2013 Photonics West
  • Place of Presentation: The Moscone Center, San Francisco (米国)
  • Year and Date: 2013-02-06
• [Presentation] Hetero- and Homo-Epitaxy of Thick AIN Layers by Hydride Vapor Phase Epitaxy (2012)
  • Author(s): Y, Kumagai, Y, Kubota, T, Nagashima, T, Kinoshita, R, Dalmau, R, Schlesser, B, Moody, J, Xie, H, Murakami, A, Koukitu, Z, Sitar
  • Organizer: 2012 Collaborative Conference on Crystal Growth
  • Place of Presentation: Doubletree by Hilton Orlandoat SeaWorld (米国)(招待講演)
  • Year and Date: 2012-12-12
• [Presentation] HVPE法による深紫外光透過性を有する高品質AINウェーハーの作製 (2012)
  • Author(s): 坂巻鮨之介, 久保田有紀, 永島徹, 木下亨, R, Dalmau, R, Schlesser, B, Moody, J, Xie, 村上尚, 熊谷義直, 纐纈明伯, Z, Sitar
  • Organizer: 第42回結晶成長国内会議
  • Place of Presentation: 九州大学筑紫キャンパス
  • Year and Date: 2012-11-09
• [Presentation] On the origin of the 265 nm absorption band in AIN bulk crystals (2012)
  • Author(s): R, Collazo, J, Xie, B, E, Gaddy, Z, Bryan, R, Kirste, M, Hoffmann, R, Dalmau, B, Moody, Y, Kumagai, T, Nagashima, Y, Kubota, T, Kinoshita, A, Koukitu, D, L, Irving, Z, Sitar
  • Organizer: International Workshop on Nitride Semiconductors 2012
  • Place of Presentation: 札幌コンベンションセンター
  • Year and Date: 2012-10-18
• [Presentation] Optical and structural properties of intentionally C-doped thick HVPE AIN layers grown on PVT AIN substrates (2012)
  • Author(s): T, Nagashima, Y, Kubota, T, Kinoshita, R, Schlesser, B, Moody, J, Xie, H, Murakami, Y, Kumagai, A, Koukitu, Z, Sitar
  • Organizer: International Workshop on Nitride Semiconductors 2012
  • Place of Presentation: 札幌コンベンションセンター
  • Year and Date: 2012-10-18
• [Presentation] Prediction of point defect behavior in nitrides using hybrid exchange DFT: Applications to the deep-UV absorption band in AIN (2012)
  • Author(s): Z, Sitar, B, E, Gaddy, R, Collazo, J, Xie, Z, Biyan, R, Kirste, M, Hoffmann, R, Dalmau, B, Moody, Y, Kumagai, T, Nagashima, Y, Kubota, T, Kinoshita, A, Koukitu, D, L, Irving
  • Organizer: International Workshop on Nitride Semiconductors 2012
  • Place of Presentation: 札幌コンベンションセンター
  • Year and Date: 2012-10-16
• [Presentation] Homoepitaxial growth of thick AIN layers by HYPE on bulk AIN substrates prepared by PVT (2012)
  • Author(s): R, Sakamaki, Y, Kubota, T, Nagashima, T, Kinoshita, R, Dalmau, R, Schlesser, B, Moody, J, Xie, H, Murakami, Y、Kumagai, A, Koukitu, Z, Sitar
  • Organizer: International Workshop on Nitride Semiconductors 2012
  • Place of Presentation: 札幌コンベンションセンター
  • Year and Date: 2012-10-15
• [Presentation] Predictive Calculations of Defect Properties using Hybrid Exchange DFT: Applications to Optically Active Impurities in AIN (2012)
  • Author(s): B, E, Gaddy, R, Collazo, J, Xie, Z, Bryan, R, Kirste, M, Hoffmann, R, Dalmau, B, Moody, Y, Kumagai, T, Nagashima, Y, Kubota, T, Kinoshita, A, Koukitu, Z, Sitar, D, L, Irving
  • Organizer: International Workshop on Nitride Semiconductors 2012
  • Place of Presentation: 札幌コンベンションセンター
  • Year and Date: 2012-10-15
• [Presentation] バルクPVT基板上HVPE成長によるAIN自立基板の作製 (2012)
  • Author(s): 坂巻龍之介, 久保田有紀, 永島徹, 木下亨, R, Dalmau, R, Schlesser, B, Moody, J, Xie, 村上尚, 熊谷義直, 纐纈明伯, Z, Sitar
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 松山大学文京キャンパス
  • Year and Date: 2012-09-13
• [Presentation] HVPE成長フリースタンディングAIN基板の異方性を考慮した分光エリプソメトリー評価 (2012)
  • Author(s): 岡本浩, 佐藤崇信, 堤浩一, 鈴木道夫, 熊谷義直, 久保田有紀, 永島徹, 木下亨, R, Dalmau, R, Schlesser, B, Moody, J, Xie, 村上尚, 纐纈明伯, Z, Sitar
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 松山大学文京キャンパス
  • Year and Date: 2012-09-13
• [Presentation] PVT基板上に成長したCドープHVPE法AIN厚膜の光学特性と構造特性 (2012)
  • Author(s): 永島徹, 久保田有紀, 木下亨, R, Schlesser, B, Moody, J, Xie, 村上尚, 熊谷義直, 纐纈明伯, Z, Sitar
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 松山大学文京キャンパス
  • Year and Date: 2012-09-13
• [Presentation] Deep-UV Transparent AlN Substrates Prepared by HVPE for UV-C LED Applications
  • Author(s): T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
  • Organizer: Conference on LED and Its Industrial Application '13
  • Place of Presentation: パシフィコ横浜
• [Presentation] Fabrication of DUV-LEDs on AlN Substrates
  • Author(s): T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, J. Xie, R. Collazo, S. Inoue, Y. Kumagai, A. Koukitu, and Z. Sitar
  • Organizer: Conference on LED and Its Industrial Application '13
  • Place of Presentation: パシフィコ横浜
  • Invited
• [Presentation] HVPE法によるAlN基板作製と260 nm帯深紫外LEDへの応用
  • Author(s): 熊谷義直，纐纈明伯
  • Organizer: 応用物理学会応用電子物性分科会研究例会「ワイドギャップ半導体の基板から展開するデバイス ～実用デバイスへの展開～」
  • Place of Presentation: 京都テルサ
  • Invited
• [Presentation] HVPE法による深紫外光透過性を有する高品質AlNの成長
  • Author(s): 額賀俊成，坂巻龍之介，久保田有紀，永島徹，木下亨，B. Moody，J. Xie，村上尚，熊谷義直，纐纈明伯，Z. Sitar
  • Organizer: 日本結晶成長学会ナノ構造・エピタキシャル成長分科会 第5回窒化物半導体結晶成長講演会
  • Place of Presentation: 大阪大学銀杏会館
• [Presentation] DUV-LEDs Fabricated on HVPE-AlN Substrates
  • Author(s): T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, J. Xie, R. Collazo, S. Inoue, Y. Kumagai, A. Koukitu and Z. Sitar
  • Organizer: 10th International Conference on Nitride Semiconductors
  • Place of Presentation: Washington, D.C., U.S.A.
  • Invited
• [Presentation] Donor-Acceptor Pair Compensation and the Broad 2.8 eV Luminescence in Bulk AlN
  • Author(s): B. E. Gaddy, Z. A. Bryan, I. S. Bryan, R. Kirste, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, Z. Sitar, R. Collazo and D. L. Irving
  • Organizer: 10th International Conference on Nitride Semiconductors
  • Place of Presentation: Washington, D.C., U.S.A.
• [Presentation] Influence of Growth Temperature on Homo-Epitaxial Growth of AlN by HVPE on PVT-AlN Substrates
  • Author(s): T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu and Z. Sitar
  • Organizer: 10th International Conference on Nitride Semiconductors
  • Place of Presentation: Washington, D.C., U.S.A.
• [Presentation] Vacancy Defects in UV-Transparent HVPE-AlN
  • Author(s): T. Kuittinen, F. Tuomisto, Y. Kumagai, T. Nagashima, T. Kinoshita, A. Koukitu, R. Collazo and Z. Sitar
  • Organizer: 10th International Conference on Nitride Semiconductors
  • Place of Presentation: Washington, D.C., U.S.A.
• [Presentation] Growth of high quality AlN with deep-UV transparency by HVPE
  • Author(s): T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: 同志社大学京田辺キャンパス
• [Presentation] Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport
  • Author(s): 熊谷義直，久保田有紀，永島徹，木下亨，R. Dalmau，R. Schlesser，B. Moody，J. Xie，村上尚，纐纈明伯，Z. Sitar
  • Organizer: 第74回応用物理学会学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス
  • Invited
• [Presentation] Influence of growth parameters on homo-epitaxial growth of thick AlN layers by HVPE on PVT-AlN substrates
  • Author(s): Y. Kumagai, T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, A. Koukitu, Z. Sitar
  • Organizer: 8th International Workshop on Bulk Nitride Semiconductors
  • Place of Presentation: Seeon, Germany
  • Invited
• [Presentation] Properties of homoepitaxial AlN layers grown by HVPE on PVT-AlN substrates
  • Author(s): T. Nagashima, Y. Kubota, R. Okayama, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, R. Collazo, Z. Sitar
  • Organizer: 8th International Workshop on Bulk Nitride Semiconductors
  • Place of Presentation: Seeon, Germany
  • Invited
• [Presentation] HVPE炉内高温雰囲気下におけるAlN単結晶表面の劣化
  • Author(s): 坂巻龍之介，額賀俊成，平連有紀，永島徹，木下亨，B. Moody，村上尚，R. Collazo，熊谷義直，纐纈明伯，Z. Sitar
  • Organizer: 第43回結晶成長国内会議
  • Place of Presentation: 長野市生涯学習センター
• [Presentation] HVPE法によるPVT-AlN基板上ホモエピタキシャル成長における成長速度増加の検討
  • Author(s): 額賀俊成，坂巻龍之介，平連有紀，永島徹，木下亨，B. Moody，村上尚，R. Collazo，熊谷義直，纐纈明伯，Z. Sitar
  • Organizer: 第43回結晶成長国内会議
  • Place of Presentation: 長野市生涯学習センター
• [Presentation] Performance of DUV-LEDs fabricated on HVPE-AlN substrates
  • Author(s): T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, B. Moody, R. Collazo, S. Inoue, Y. Kumagai, A. Koukitu, Z. Sitar
  • Organizer: 2014 Photonics West
  • Place of Presentation: San Francisco, U.S.A.
  • Invited
• [Remarks]
  • URL: http://www.tuat.ac.jp/disclosure/pressrelease/2012/20121225135159/index.html