Coherent growth of high-quality group-III nitirides on SiC substrates and its device applications
| Project/Area Number |
24360009
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kyoto University |
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Principal Investigator |
Suda Jun 京都大学, 工学(系)研究科(研究院), 准教授 (00293887)
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| Project Period (FY) |
2012-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2015: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2014: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2013: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
Fiscal Year 2012: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
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| Keywords | 窒化アルミニウム / 炭化珪素 / 分子線エピタキシー / 結晶成長 / 転位 / 超格子 / III族窒化物 / 炭化硅素 / コヒーレント / デバイス / 格子欠陥 / ヘテロ構造 |
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| Outline of Final Research Achievements |
Coherent Growth of high-Al-content AlGaN on SiC substrates aiming at device applications were investigated. As high-Al-content AlGaN, AlN/GaN short-period superlattices were grown. Various kinds of AlN/GaN Superlattices were grown to assess critical composition as well as critical thickness for coherent growth on SiC substrates. Superlattices with GaN mole fraction of 20% were successfully growth coherently. On the other hand, it was found that growth of 3-bilayer-thick GaN results in lattice relaxation. The relaxation was gradual. By using this nature, strain-controlled AlN were grown on SiC substrates via ultra-thin GaN/AlN multilayer structures.
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Report
(5 results)
Research Products
(20 results)
