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Development of macro-nano combined growth method for energy saving

Research Project

Project/Area Number 24360012
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypePartial Multi-year Fund
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKyushu University

Principal Investigator

KAKIMOTO Koichi  九州大学, 応用力学研究所, 教授 (90291509)

Co-Investigator(Kenkyū-buntansha) NISHIZAWA Shin-ichi  独立行政法人産業技術総合研究所, エネルギー技術部門, 研究グループ長 (40267414)
NAKANO Satoshi  九州大学, 応用力学研究所, 技術専門職員 (80423557)
Project Period (FY) 2012-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000)
Fiscal Year 2014: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2013: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2012: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
Keywords昇華法 / ワイドバンドギャップ / SiC / 結晶成長 / シリコンカーバイド / 転位 / 残留応力 / 結晶性長 / 3次元解析
Outline of Final Research Achievements

The effect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (C- or Si-face 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. The results reveal that the formation of 4H-SiC was more stable than that of 6H-SiC when a grown crystal was doped with nitrogen using C-face 4H- and 6H-SiC as seed crystals. In contrast, formation of 6H-SiC was favored over 4H-SiC when Si-face 4H- and 6H-SiC seed crystals were used. Meanwhile, the formation of 4H-SiC was more stable than that of 6H-SiC when aluminum was the dopant and C- and Si-faces of 6H-SiC were used as seed crystals. Formation of 6H-SiC occurred over that of 4H-SiC in the cases of C- and Si-faces of 4H-SiC as seed crystals.

Report

(4 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Annual Research Report
  • 2012 Annual Research Report
  • Research Products

    (41 results)

All 2015 2014 2013 2012

All Journal Article (13 results) (of which Peer Reviewed: 13 results,  Open Access: 5 results,  Acknowledgement Compliant: 3 results) Presentation (28 results) (of which Invited: 4 results)

  • [Journal Article] Dislocation-density-based modeling of the plastic behavior of 4H-SiC single crystals using the Alexander-Haasen model2014

    • Author(s)
      B. Gao, K.Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 386 Pages: 215-219

    • DOI

      10.1016/j.jcrysgro.2013.10.023

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory2014

    • Author(s)
      T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, K. Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 385 Pages: 95-99

    • DOI

      10.1016/j.jcrysgro.2013.03.036

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H-SiC single crystals2014

    • Author(s)
      B. Gao, K. Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 392 Pages: 92-97

    • DOI

      10.1016/j.jcrysgro.2014.02.005

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method2014

    • Author(s)
      Bing Gao and Koichi Kakimoto
    • Journal Title

      Cryst. Growth Des.

      Volume: 14 (3) Issue: 3 Pages: 1272-1278

    • DOI

      10.1021/cg401789g

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] Molecular dynamics simulation of graphene growth by surface decomposition of 6H-SiC(0001).2014

    • Author(s)
      Ryosuke Iguchi, Takahiro Kawamura, Yasuyuki Suzuki, Masato Inoue, Yoshihiro Kangawa, Koichi Kakimoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53 065601 Issue: 6 Pages: 1-4

    • DOI

      10.7567/jjap.53.065601

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Highly efficient and stable implementation of the Alexander-Haasen model for numerical analysis of dislocationin crystalgrowth2013

    • Author(s)
      B. Gao n, S.Nakano,K.Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 369 Pages: 32-37

    • DOI

      10.1016/j.jcrysgro.2013.01.039

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of the Inclusion of T ransparency on the Thermal Field and Interface Shape in Long-term Sublimation Growth of SiC Crystals2013

    • Author(s)
      Bing Gao and Koichi Kakimoto
    • Journal Title

      日本結晶成長学会誌

      Volume: Vol.40、No.1 Pages: 20-24

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Numerical investigation of the influence of cooling flux on the generation of dislocations in cylindrical mono-like silicon growth2013

    • Author(s)
      B. Gao, K. Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 384 Pages: 13-20

    • DOI

      10.1016/j.jcrysgro.2013.09.002

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Relationship between the locations of activated dislocations and the cooling flux direction in monocrystalline-like silicon grown in the [001] and [111] directions2013

    • Author(s)
      Bing Gao and Koichi Kakimoto
    • Journal Title

      J. Appl. Cryst.

      Volume: Volume 46, Issue 6 Issue: 6 Pages: 1771-1780

    • DOI

      10.1107/s002188981302517x

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] The impact of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AIN crystals2012

    • Author(s)
      B. Gao, S. Nakano, K. Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 338 Issue: 1 Pages: 69-74

    • DOI

      10.1016/j.jcrysgro.2011.11.030

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Analysis of growth velocity of SiC growth and by the Physical vapor transport method2012

    • Author(s)
      Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano and Shin-ichi Nishizawa
    • Journal Title

      Materials Science Forum

      Volume: 717-720 Pages: 25-28

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Numerical analysis of the velocity of SiC growth by the top seeding method2012

    • Author(s)
      F. Inui, B. Gao, S. Nakano, K. Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 348 Issue: 1 Pages: 71-74

    • DOI

      10.1016/j.jcrysgro.2012.03.036

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory2012

    • Author(s)
      T Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano Y Kangawa, K. Kakimoto
    • Journal Title

      Journal of Crystal Growth

      Volume: 352 Issue: 1 Pages: 177-180

    • DOI

      10.1016/j.jcrysgro.2012.01.023

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Presentation] 単結晶SiCのナノインデンテーションに関する研究2015

    • Author(s)
      松本光弘、原田博文、柿本浩一、閻 紀旺
    • Organizer
      2015年精密工学会春季大会学術講演会
    • Place of Presentation
      東洋大学 白山キャンパス
    • Year and Date
      2015-03-17 – 2015-03-19
    • Related Report
      2014 Annual Research Report
  • [Presentation] Crystal growth of atomic scale and macro scale calculations2015

    • Author(s)
      Koichi Kakimoto
    • Organizer
      DKT-2015
    • Place of Presentation
      Goethe- Universiat, Frnakfurt am Main, GERMANY
    • Year and Date
      2015-03-04 – 2015-03-06
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] SiC crystal growth of electrical and optical devices2015

    • Author(s)
      K. Kakimoto
    • Organizer
      39th International Conference and Exposition on Advanced Ceramics and Composites
    • Place of Presentation
      Daytona Beach Florida, USA
    • Year and Date
      2015-01-25 – 2015-01-30
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] 数値解析による結晶成長の定量予測:マクロと原子スケールの融合2014

    • Author(s)
      柿本 浩一
    • Organizer
      NCCG-44
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2014-11-06 – 2014-11-08
    • Related Report
      2014 Annual Research Report
  • [Presentation] SiC表面分解法によるステップ端近傍のグラフェン成長シミュレーション2014

    • Author(s)
      土井優太,井口綾佑,河村貴宏,鈴木泰之,寒川義裕,柿本浩一
    • Organizer
      NCCG-44
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2014-11-06 – 2014-11-08
    • Related Report
      2014 Annual Research Report
  • [Presentation] 分子動力学法によるらせん転位を含む4H-SiCの歪エネルギー解析2014

    • Author(s)
      水谷充利,河村貴宏,鈴木泰之,寒川義裕,柿本浩一
    • Organizer
      NCCG-44
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2014-11-06 – 2014-11-08
    • Related Report
      2014 Annual Research Report
  • [Presentation] 二次元核形成理論を用いたSiC昇華法成長における多形安定性の非定常解析2014

    • Author(s)
      荒木清道,高冰,中野智,西澤伸一,柿本浩一
    • Organizer
      NCCG-44
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2014-11-06 – 2014-11-08
    • Related Report
      2014 Annual Research Report
  • [Presentation] 二次元核形成理論を用いたSiC 昇華法成長における多形安定性の非定常解析2014

    • Author(s)
      荒木清道,高  冰, 中野 智,西澤伸一,柿本浩一
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] SiC 表面分解法におけるステップ端からのグラフェン成長シミュレーション2014

    • Author(s)
      雨川将大,吉村善徳,河村貴宏,鈴木泰之,寒川義裕,柿本浩一
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] 分子動力学法による4H-SiC のらせん転位解析2014

    • Author(s)
      水谷充利,河村貴宏, 鈴木泰之,寒川義裕,柿本浩一
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] Crystal Growth of Energy Production and Energy Savin2014

    • Author(s)
      Koichi KAKIMOTO
    • Organizer
      IUMRS-ICA 2014
    • Place of Presentation
      Fukuoka University, Fukuoka
    • Year and Date
      2014-08-24 – 2014-08-30
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Unsteady thermodynamical analysis of the polytype stability in PVT growth of SiC using 2D nucleation theory2014

    • Author(s)
      Seido Araki
    • Organizer
      6th International Workshop on Crystal Growth Technology
    • Place of Presentation
      NOVOTEL Am Tiergarten Berlin, Germany
    • Year and Date
      2014-06-15 – 2014-06-19
    • Related Report
      2014 Annual Research Report
  • [Presentation] Crystal growth of SiC for power devices2014

    • Author(s)
      Koichi Kakimoto
    • Organizer
      CGCT-6
    • Place of Presentation
      Ramada Plaza, Jeju, KOREA
    • Year and Date
      2014-06-11 – 2014-06-14
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Three-dimensional modeling of basal plane dislocations in 4H-SiC2014

    • Author(s)
      Bing Gao, Satoshi Nakano, Koichi Kakimoto
    • Organizer
      E-MRS 2014 SPRING MEETING
    • Place of Presentation
      Congress Center,Lille, France
    • Year and Date
      2014-05-27 – 2014-05-29
    • Related Report
      2014 Annual Research Report
  • [Presentation] PVT を用いたSiC 結晶成長における不純物混入解析2014

    • Author(s)
      柿本浩一,Bing Gao,中野 智,寒川義裕,西澤伸一
    • Organizer
      第61 回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] 物理的気相輸送法を用いた4H-SiC 単結晶成長における基底面転位の3 次元2014

    • Author(s)
      高  冰,中野 智,柿本浩一
    • Organizer
      第61 回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] PVT 成長法を用いた4H-SiC 単結晶における基底面転位の低減に対するヒーター電力制御の最適化2014

    • Author(s)
      高  冰,中野 智,柿本浩一
    • Organizer
      第61 回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Related Report
      2013 Annual Research Report
  • [Presentation] SiCバルク結晶成長の現状と将来2013

    • Author(s)
      柿本浩一、Gao Bing 、白桃拓哉、寨川義裕、西澤伸一
    • Organizer
      パワーデバイス用シリコンおよび関連半導体材料にする研究会(第3回) 2013年千葉工業大学
    • Place of Presentation
      千葉工業大学(招待講演)
    • Year and Date
      2013-03-15
    • Related Report
      2012 Annual Research Report
  • [Presentation] コンピュータシミュレーションによる多結晶シリコンの凝固過程と格子欠陥分布2013

    • Author(s)
      柿本浩一
    • Organizer
      第2回微量元素分析・マッピング技術研究会
    • Place of Presentation
      静岡理工科大学(招待講演)
    • Year and Date
      2013-03-12
    • Related Report
      2012 Annual Research Report
  • [Presentation] コンピュータシミュレーションによる多結晶シリコンの凝固過程と鉄不純物分布2013

    • Author(s)
      柿本浩一
    • Organizer
      専門研究会(第一グループ)「シリコン太陽電池の金属不純物評価とゲッタリング技術」
    • Place of Presentation
      つま恋(招待講演)
    • Year and Date
      2013-03-11
    • Related Report
      2012 Annual Research Report
  • [Presentation] Study of the effect of doped nitrogen and aluminum on polytype stability during PVT growth of SiC using 2D nucleation theory2013

    • Author(s)
      Koichi Kakimoto, Takuya Shiramomo, Bing Gao, Frederic Mercier, Shin-ichi Nishizawa, Satoshi Nakano
    • Organizer
      17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
    • Place of Presentation
      Warsaw, Poland
    • Related Report
      2013 Annual Research Report
  • [Presentation] Dislocation density-based modeling of plastic deformation of 4H-SiC single crystals by the Alexander-Haasen model during PVT growth2013

    • Author(s)
      B. Gao, S. Nishizawa, K. Kakimoto
    • Organizer
      第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学、京都
    • Related Report
      2013 Annual Research Report
  • [Presentation] PVT成長法におけるAlexander-Haasenモデルを用いた4H-SiC単結晶の転位密度塑性挙動モデル2013

    • Author(s)
      高冰,西澤伸一,柿本浩一
    • Organizer
      第43回結晶成長国内会議
    • Place of Presentation
      長野市生涯学習センター
    • Related Report
      2013 Annual Research Report
  • [Presentation] 昇華法成長SiC結晶中への不純物混入解析2013

    • Author(s)
      柿本浩一,高冰,白桃拓哉,西澤伸一,中野智,寒川義裕
    • Organizer
      第43回結晶成長国内会議
    • Place of Presentation
      長野市生涯学習センター
    • Related Report
      2013 Annual Research Report
  • [Presentation] PVTを用いたSiCバルク結晶成長における転位および多結晶分布の非定常数値解析2012

    • Author(s)
      高冰, 中野智, 西澤伸一, 柿本浩一
    • Organizer
      第42回結晶成長国内会議NCCG-42
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2012-11-09
    • Related Report
      2012 Annual Research Report
  • [Presentation] SiC結晶成長の分子動力学シミュレーション2012

    • Author(s)
      速水義之, 河村貴宏, 鈴木泰之, 寒川義裕, 柿本浩一
    • Organizer
      第42回結晶成長国内会議NCCG-42
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2012-11-09
    • Related Report
      2012 Annual Research Report
  • [Presentation] Numerical and experimental investigation of directional solidification of silicon with a seed2012

    • Author(s)
      K. Kakimoto
    • Organizer
      CSSC6
    • Place of Presentation
      Aix-les-Bains, France(招待講演)
    • Year and Date
      2012-10-10
    • Related Report
      2012 Annual Research Report
  • [Presentation] シリコン結晶系太陽電池の結晶成長と変換効率2012

    • Author(s)
      柿本浩一, Bing Gao,中野 智, 寒川義裕, 原田博文
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学・松山大学(招待講演)
    • Year and Date
      2012-09-11
    • Related Report
      2012 Annual Research Report

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Published: 2012-04-24   Modified: 2019-07-29  

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