| Budget Amount *help |
¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2014: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2013: ¥10,010,000 (Direct Cost: ¥7,700,000、Indirect Cost: ¥2,310,000)
Fiscal Year 2012: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
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| Outline of Final Research Achievements |
We have controlled dislocation structure and morphology in SrTiO3 crystals by using the atomic bonding method (ABM) and investigated electrical conduction mechanisms via dislocation networks in the crystals formed by ABM. Although resistive switching phenomena have been observed for both Nb-doped SrTiO3 and reduction-annealed non-doped SrTiO3 (RSTO), their mechanisms are different from each other: the former can be explained by carrier emission and capture at metal/SrTiO3 interfacial traps accompanied by the space charge limited current conduction, and the latter by the drift motion of oxygen vacancies in the crystal. In particular, by measuring electrical properties of micrometer-scaled devices made from the atomically bonded RSTO, it was found that the dislocation network can effectively be functionalized as an electrical conduction site having the ability of resistive switching.
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