| Budget Amount *help |
¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000)
Fiscal Year 2014: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2012: ¥8,580,000 (Direct Cost: ¥6,600,000、Indirect Cost: ¥1,980,000)
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| Outline of Final Research Achievements |
A GaP p-n homojunction bulk crystal was formed by ion-implanting Zn atoms (p-type impurity atoms) to a GaP single crystal substrate containing S atoms (n-type impurity atoms). As a result of the dressed-photon-phonon-assisted annealing, strong electroluminescence was obtained in the energy region higher than the bandgap energy. The optimum ratio between the injected current number and irradiated photon number condition for this annealing was found to be 1:1.3. By this finding, it was confirmed that the dressed-photon-phonon-assisted annealing was based on the stimulated emission of photons.
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