| Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2014: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2013: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000)
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| Outline of Final Research Achievements |
The strain-induced silicon nanowires (SiNWs) will be effective for high-sensitive piezoresistance elements used in MEMS force sensors due to their electronic energy band structural features under mechanical strain. This research examined the piezoresistive effect of individual SiNWs under uniaxial tensile strain using the MEMS-based nanotensile testing device. The SiNWs in directions of <111> and <112> were grown on the testing device by the VLS technique. The SiNWs were tensioned using the device and simultaneously their I-V characteristics were measured. The resistance change ratio of strain-induced SiNWs of <111> and <112> directions have reached -80% and -35% at 0.03 strain, respective. The gauge factors for SiNWs of <111> and <112> also showed -170.7 at 0.002 strain and -128.9 at 0.001 strain, respectively, which were larger than unknown values for n-type bulk silicon. These results are extremely important to nanomechanical force sensors.
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