| Budget Amount *help |
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2014: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2012: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
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| Outline of Final Research Achievements |
In order to realize high temperature high power electronics, development on device fabrication technique has been carried out. Firstly, the operation characteristics was estimated using the analytical model with material parameters. The doping concentration and the thickness of drift layer for diamond switching devices were optimized which realizes constant drain current and transconductance in the temperature ranges from 200 to 300 degC. Fabricated planer MESFET shows breakdown voltages more than 1.5kV which was the best value in the world. To decrease the Ohmic contact resistances on source and drain, p+ contact layers were formed on p- drift layer of MESFET. The increase of the gate width more than 30mm was realized using interconnection of source contact.
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