Researches of high temperature power switching devices on high quality semiconductor diamond
| Project/Area Number |
24360113
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Partial Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Power engineering/Power conversion/Electric machinery
|
|---|
| Research Institution | National Institute of Advanced Industrial Science and Technology |
|---|
Principal Investigator |
Umezawa Hitoshi 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員 (80329135)
|
|---|
| Project Period (FY) |
2012-04-01 – 2016-03-31
|
| Project Status |
Completed (Fiscal Year 2015)
|
| Budget Amount *help |
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2015: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2014: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2013: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2012: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
|
|---|
| Keywords | ダイヤモンド / パワーデバイス / FET / 高温動作 / 電界効果型トランジスタ / 低抵抗コンタクト / ディープディプレション型 / ブレークダウン電圧 / 寄生抵抗成分 / エピタキシャル成長 / 半導体デバイス / トランジスタ / 低損失 |
|---|
| Outline of Final Research Achievements |
In order to realize high temperature high power electronics, development on device fabrication technique has been carried out. Firstly, the operation characteristics was estimated using the analytical model with material parameters. The doping concentration and the thickness of drift layer for diamond switching devices were optimized which realizes constant drain current and transconductance in the temperature ranges from 200 to 300 degC. Fabricated planer MESFET shows breakdown voltages more than 1.5kV which was the best value in the world. To decrease the Ohmic contact resistances on source and drain, p+ contact layers were formed on p- drift layer of MESFET. The increase of the gate width more than 30mm was realized using interconnection of source contact.
|
Report
(5 results)
Research Products
(29 results)
-
-
-
-
-
-
-
-
-
-
-
[Presentation] High Voltage Diamond MESFET with VBR > 1.5kV2015
Author(s)
H. Umezawa, T. Matsumoto, S. Ohmagari, Y. Kato and Y. Mokuno
Organizer
2015 International Conference on Solid State Device and Materials - SSDM2015
Place of Presentation
International Conference Center, Sapporo, Japan
Year and Date
2015-09-27
Related Report
Int'l Joint Research
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
