| Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2014: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2013: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2012: ¥8,710,000 (Direct Cost: ¥6,700,000、Indirect Cost: ¥2,010,000)
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| Outline of Final Research Achievements |
To realize nanowire-based light-emitting devices, we grew III-V semiconductor nanowires by selective-area metalorganic vapor-epitaxy (SA-MOVPE) and carried out characterization of their optical properties. Main results are summarized as follows. (1) The far-field emission pattern of nanowire-based light-emitting diode was investigated experimentally and theoretically. Peculiar emission patterns for nanowires were clrarified. (2) Density-controled InP nanowire arrays were realized by SA-MOVPE. The InAsP quantum dots (QDs) were embedded in the low-density InP nanowire arrays, and emission from a single QD in a single nanowire was confirmed. (3) Mode structure of the nanowire-based optical cavity was investigated by numerical simulation and its design principle was established. GaAs/InGaAs/GaAs core-multishell heterostructure nanowires were grown following the established design and cavity mode resonance was clearly identified by temperature-dependent photoluminescence study.
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