INTEGRATION OF FERROMAGNETIC SINGLE-ELECTRON TRANSISTORS USING ELECTROMIGRATION METHODS

• Project/Area Number: 24360117
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokyo University of Agriculture and Technology
• Principal Investigator: SHIRAKASHI JUN-ICHI 東京農工大学, 工学(系)研究科(研究院), 准教授 (00315657)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Project Status: Completed (Fiscal Year 2014)
• Budget Amount: ¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000); Fiscal Year 2014: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000); Fiscal Year 2013: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000); Fiscal Year 2012: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
• Keywords: 少数電子素子 / スピンエレクトロニクス / エレクトロマイグレーション / マイクロ・ナノデバイス / ナノギャップ / ナノ材料 / 単電子トランジスタ / 磁性

Outline of Final Research Achievements

We present a simple technique for simultaneous control of the electrical properties of multiple Ni nanogaps. This technique is based on electromigration induced by a field emission current and is called "activation". Simultaneous tuning of the tunnel resistance of multiple nanogaps was achieved by passing a Fowler-Nordheim (F-N) field emission current through an initial group of Ni nanogaps connected in series. Furthermore, Ni-based single-electron transistors (SETs) operating at room temperature were successfully fabricated and integrated using activation method. These results clearly imply that electromigration procedure allows us to easily and simply integrate Ni-based SETs.

Research Products

• [Journal Article] Ultrafast Feedback-Controlled Electromigration Using a Field-Programmable Gate Array (2015)
  • Author(s): Y. Kanamaru, M. Ando and J. Shirakashi
  • Journal Title: J. Vac. Sci. Technol. B Volume: 33 Issue: 2
  • DOI: 10.1116/1.4903929
  • Peer Reviewed
• [Journal Article] A Fully Customized Hardware System for Ultra-Fast Feedback-Controlled Electromigration Using FPGA (2014)
  • Author(s): Y. Kanamaru, M. Ando, R. Suda and J. Shirakashi
  • Journal Title: 2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO) Volume: 14778995 Pages: 719-722
  • DOI: 10.1109/nano.2014.6968058
  • Peer Reviewed
• [Journal Article] Resistive Switching Effects in Electromigrated Ni Nanogaps (2014)
  • Author(s): K. Takikawa, R. Suda, M. Ito, T. Toyonaka and J. Shirakashi
  • Journal Title: 2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO) Volume: 14778966 Pages: 715-718
  • DOI: 10.1109/nano.2014.6968014
  • Peer Reviewed
• [Journal Article] Low-temperature deposition of thin Si, Ge, and SiGe films using reducing activity of ballistic hot electrons (2014)
  • Author(s): N. Koshida, R. Suda, M. Yagi, A. Kojima, R. Mentek, B. Gelloz, N. Mori, and J. Shirakashi
  • Journal Title: ECS Trans. Volume: 64 Issue: 6 Pages: 405-410
  • DOI: 10.1149/06406.0405ecst
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Ballistic hot electron effects in nanosilicon dots and their photonic applications (Invited) (2014)
  • Author(s): N. Koshida, N. Ikegami, A. Kojima, R. Mentek, R. Suda, M. Yagi, J. Shirakashi, B. Gelloz, and N. Mori
  • Journal Title: ECS Trans. Volume: 61 Issue: 5 Pages: 47-54
  • DOI: 10.1149/06105.0047ecst
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Electrical Properties of Nanogap-Based Single-Electron Transistors Fabricated by Field-Emission-Induced Electromigration (2014)
  • Author(s): R. Suda, S. Akimoto, K. Morihara and J. Shirakashi
  • Journal Title: Proc. 13th IEEE Int. Conf. on Nanotechnology (IEEE-NANO) Volume: 13 Pages: 87-90
  • DOI: 10.1109/nano.2013.6720862
  • Peer Reviewed
• [Journal Article] Tuning of Resistance of Nanogaps Using Field-Emission-Induced Electromigration with Feedback Control Scheme (2013)
  • Author(s): M. Ando, S. Akimoto, R. Suda and J. Shirakashi
  • Journal Title: Conference Proceedings, 2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO) Volume: Year 2013 Pages: 1141-1144
  • DOI: 10.1109/nano.2013.6721060
  • Peer Reviewed
• [Journal Article] In-Situ Observation of Temperature Distribution of Microheaters Using Near-Infrared Charge Coupled Device Imaging System (2013)
  • Author(s): T. Saito, W. Lin and J. Shirakashi
  • Journal Title: Nanosci. Nanotechnol. Lett. Volume: 5 Issue: 10 Pages: 1076-1080
  • DOI: 10.1166/nnl.2013.1671
  • Peer Reviewed
• [Journal Article] Formation Scheme of Quantum Point Contacts Based on Nanogaps Using Field-Emission-Induced Electromigration (2013)
  • Author(s): R. Suda, M. Yagi, T. Watanabe and J. Shirakashi
  • Journal Title: J. Nanosci. Nanotechnol. Volume: 13 Issue: 2 Pages: 883-887
  • DOI: 10.1166/jnn.2013.6072
  • Peer Reviewed
• [Journal Article] Control Parameters for Fabrication of Single-Electron Transistors Using Field-Emission-Induced Electromigration (2013)
  • Author(s): S. Akimoto, M. Ito, S. Ueno and J. Shirakashi
  • Journal Title: J. Nanosci. Nanotechnol. Volume: 13 Issue: 2 Pages: 993-996
  • DOI: 10.1166/jnn.2013.6073
  • Peer Reviewed
• [Journal Article] Nanoscale Scratching of Platinum Thin Films Using Atomic Force Microscopy with DLC Tips (2012)
  • Author(s): X. Jiang, G Wu, Z. Du, K. J. Ma, J. Shirakashi and A. A. Tseng
  • Journal Title: J. Vac. Sci. Technol. Volume: 30 Issue: 2
  • DOI: 10.1116/1.3694242
  • Peer Reviewed
• [Presentation] Structural Tuning of Nanogaps Using Field-Emission-Induced Electromigration with Bipolar Biasing (2014)
  • Author(s): M. Yagi, M. Ito and J. Shirakashi
  • Organizer: 4th International Conference on Manipulation, Manu-facturing and Measurement on the Nanoscale (3M-NANO 2014)
  • Place of Presentation: Taipei, Taiwan.
  • Year and Date: 2014-10-27 – 2014-10-31
  • Invited
• [Presentation] Simultaneous Fabrication of Nanogaps Using Field-Emission-Induced Electromigration (2014)
  • Author(s): M. Ito, M. Yagi, K. Morihara and J. Shirakashi
  • Organizer: 4th International Conference on Manipulation, Manu-facturing and Measurement on the Nanoscale (3M-NANO 2014)
  • Place of Presentation: Taipei, Taiwan.
  • Year and Date: 2014-10-27 – 2014-10-31
• [Presentation] A Fully Customized Hardware System for Ultra-Fast Feedback-Controlled Electromigration Using FPGA (2014)
  • Author(s): Y. Kanamaru, M. Ando, R. Suda and J. Shirakashi
  • Organizer: IEEE NANO 2014 (2014 IEEE International Conference on Nanotechnology)
  • Place of Presentation: Toronto, ON, Canada.
  • Year and Date: 2014-08-18 – 2014-08-21
• [Presentation] Resistive Switching Effects in Electromigrated Ni Nanogaps (2014)
  • Author(s): K. Takikawa, R. Suda, M. Ito, T. Toyonaka and J. Shirakashi
  • Organizer: IEEE NANO 2014 (2014 IEEE International Conference on Nanotechnology)
  • Place of Presentation: Toronto, ON, Canada.
  • Year and Date: 2014-08-18 – 2014-08-21
• [Presentation] Nanoscale Mechanical Scratching of Graphene Using Scanning Probe Microscopy (2013)
  • Author(s): R. Suda, T. Saito, A. A. Tseng and J. Shirakashi
  • Organizer: 5th IEEE International Nanoelectronics Conference (INEC 2013)
  • Place of Presentation: Sentosa Island, Singapore
  • Year and Date: 2013-01-03
• [Presentation] Electrical Properties of Nanogap-Based Single-Electron Transistors Fabricated by Field-Emission-Induced Electromigration (2013)
  • Author(s): R. Suda, S. Akimoto, K. Morihara and J. Shirakashi
  • Organizer: IEEE NANO 2013 (2013 IEEE International Conference on Nanotechnology)
  • Place of Presentation: Beijing, China
• [Presentation] Tuning of Resistance of Nanogaps Using Field-Emission-Induced Electromigration with Feedback Control Scheme (2013)
  • Author(s): M. Ando, S. Akimoto, R. Suda and J. Shirakashi
  • Organizer: IEEE NANO 2013 (2013 IEEE International Conference on Nanotechnology)
  • Place of Presentation: Beijing, China
• [Presentation] Electromigration-Based Fabrication Methods for Single-Electron Transistors (2013)
  • Author(s): J. Shirakashi
  • Organizer: CMOS Emerging Technologies Research, 2013 Symposium
  • Place of Presentation: Whistler, BC, Canada
  • Invited
• [Presentation] In-Situ Control of Quantum Point Contacts Using Scanning Probe Microscopy Scratch Lithography (2012)
  • Author(s): R. Suda, T. Ohyama, A. A. Tseng and J. Shirakashi
  • Organizer: IEEE NANO 2012 (12th International Conference on Nanotechnology)
  • Place of Presentation: Birmingham, UK.(招待講演)
  • Year and Date: 2012-08-23
• [Presentation] Investigation of Nanogap Formation Process Using Field-Emission-Induced Electromigration with Alternating Current Bias (2012)
  • Author(s): M. Yagi, S. Akimoto, M. Ito and J. Shirakashi
  • Organizer: 2012 International Conference on Nanoscience +Technology (ICN+T 2012)
  • Place of Presentation: Paris, France.
  • Year and Date: 2012-07-25
• [Book] Nanoelectronic Device Applications Handbook, "Chapter 13: Simultaneously Controlled Tuning of Tunneling Properties of Integrated Nanogaps Using Field-Emission-Induced Electromigration" (2013)
  • Author(s): M. Ito, S. Akimoto, R. Suda and J. Shirakashi
  • Publisher: CRC Press, Taylor and Francis Group, LLC
• [Remarks] 白樫研究室ホームページ
  • URL: http://www.tuat.ac.jp/~nanotech/index.htm
• [Remarks] 白樫研究室ホームページ
  • URL: http://www.tuat.ac.jp/~nanotech/index.htm
• [Remarks]
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