| Budget Amount *help |
¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2016: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2015: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2014: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2013: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2012: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Outline of Final Research Achievements |
Both the longitudinal optical (LO) and transverse optical (TO) phonons are indispensable for multiaxial strain analysis in ultra-thin Ge and SiGe films by Raman spectroscopy. The TO phonon, however, is hardly excited under (001) backscattering geometry due to the kimitted z-polarized component. We achieved excitation of both LO and TO phonons by oil-immersion Raman spectroscopy, which can excite the z-polarized component effectively because of high numerical aperture lens. Then, the phonon deformation potentials (PDPs) of SiGe for the whole Ge concentration range were extracted for the first time. Thus, the derived PDPs of SiGe allows us to measure complex strain states in SiGe promised as next-generation channel material.
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