| Budget Amount *help |
¥18,330,000 (Direct Cost: ¥14,100,000、Indirect Cost: ¥4,230,000)
Fiscal Year 2014: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
Fiscal Year 2012: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
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| Outline of Final Research Achievements |
The 3-dimensional devices and Junctionless FETs (J-FETs), which are receiving great attention for near future devices, are studied numerically with emphasis on the Coulomb interaction among electrons via Monte Carlo simulations for realistic prediction of device properties. Since high electron density in the channel is inevitable in J-FETs, the Coulomb interaction greatly affects the device performance, namely, the drain current is degraded by about 30 %. Also, we have found that the dynamical screening effects in the channel region (dynamical plasmon excitations) become of crucial importance in determining device properties in nanoscale 3-D devices.
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