| Budget Amount *help |
¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000)
Fiscal Year 2014: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2013: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2012: ¥11,960,000 (Direct Cost: ¥9,200,000、Indirect Cost: ¥2,760,000)
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| Outline of Final Research Achievements |
In order to realize Ge-on-Si active photonic devices operating in the long-near-infrared (LNIR) wavelength range of 1.7 - 2.5 micron, cantilever structures of Ge were fabricated, and direct-bandgap energy was evaluated using micro-photoluminescence (PL) spectroscopy. A uniaxial strain as large as 2% was induced by applying a force to a cantilever structure composed of single layer of Ge, i.e., by elastically bending the structure. This led to a red shift in the PL peak position from 1.57 micron to ~1.85 micron, indicating the decrease of direct bandage energy of Ge. The results suggest that photonic devices of strained Ge are expected, which operate in the LNIR range.
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