Longer-wavelength operation of germanium-on-silicon light-emission and photodetection devices using lattice strain control
Project/Area Number |
24360133
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Electron device/Electronic equipment
|
Research Institution | The University of Tokyo |
Principal Investigator |
ISHIKAWA Yasuhiko 東京大学, 工学(系)研究科(研究院), 准教授 (60303541)
|
Project Period (FY) |
2012-04-01 – 2015-03-31
|
Project Status |
Completed (Fiscal Year 2014)
|
Budget Amount *help |
¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000)
Fiscal Year 2014: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2013: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2012: ¥11,960,000 (Direct Cost: ¥9,200,000、Indirect Cost: ¥2,760,000)
|
Keywords | 半導体物性 / 光物性 / MBE、エピタキシャル / 光源技術 / 電子・電気材料 |
Outline of Final Research Achievements |
In order to realize Ge-on-Si active photonic devices operating in the long-near-infrared (LNIR) wavelength range of 1.7 - 2.5 micron, cantilever structures of Ge were fabricated, and direct-bandgap energy was evaluated using micro-photoluminescence (PL) spectroscopy. A uniaxial strain as large as 2% was induced by applying a force to a cantilever structure composed of single layer of Ge, i.e., by elastically bending the structure. This led to a red shift in the PL peak position from 1.57 micron to ~1.85 micron, indicating the decrease of direct bandage energy of Ge. The results suggest that photonic devices of strained Ge are expected, which operate in the LNIR range.
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Report
(4 results)
Research Products
(10 results)