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Demonstration of ultra-high speed light emitters and detectors for visible light communication

Research Project

Project/Area Number 24360140
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypePartial Multi-year Fund
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionMeijo University

Principal Investigator

KAMIYAMA Satoshi  名城大学, 理工学部, 教授 (10340291)

Project Period (FY) 2012-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000)
Fiscal Year 2014: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2013: ¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2012: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
KeywordsGaN / LED / フォトセンサー / 可視光通信 / PLZT / 光取り出し効率 / 高速変調 / カー効果 / ITO / 光変調器 / ペロブスカイト / フォトディテクタ
Outline of Final Research Achievements

The aims of this study are to realize high-efficiency nitride-based blue LEDs, to demonstrate high-speed optical modulation by an external oscillator, and to demonstrate high-sensitivity HFET type photosensors. A blue LED with light extraction efficiency of 70 % has been achieved by applying the moth-eye-patterned sapphire substrate. Light modulation by an external modulator with Kerr effect in PLZT thin film has been confirmed by FDTD simulation, and deposition condition for the perovskite-phase PLZT thin film was fixed. Super sensitive HFET-type photosensors, whose sensitivity is four orders of magnitude higher than conventional pin photodiode, are also realized.

Report

(4 results)
  • 2014 Annual Research Report   Final Research Report ( PDF )
  • 2013 Annual Research Report
  • 2012 Annual Research Report
  • Research Products

    (13 results)

All 2014 2013 2012 Other

All Journal Article (3 results) (of which Peer Reviewed: 3 results) Presentation (10 results) (of which Invited: 1 results)

  • [Journal Article] Advantages of the moth-eye patterned sapphire substrate for the high performance nitride based LEDs2014

    • Author(s)
      T. Kondo, T. Kitano, A. Suzuki, M. Mori, K. Naniwae, S. Kamiyama, M. Iwaya, T. Takeuchi and I. Akasaki
    • Journal Title

      physica status solidi (c)

      Volume: 11 Pages: 771-774

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Nitride-based hetero-field-effect transistor-type photosensors with extremely high photosensitivity2013

    • Author(s)
      M. Ishiguro, K. Ikeda, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
    • Journal Title

      Physica Status Solidi RRL

      Volume: 7

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Study on Efficiency Component Estimation of 405 nm Light Emitting Diodes from Electroluminescence and Photoluminescence Intensities2013

    • Author(s)
      K. Aoyama, A. Suzuki, T. Kitano, S. Kamiyama, T. Takeuchi, M. Iwaya, and I. Akasaki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52

    • NAID

      210000142741

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Presentation] MOVPE選択成長によるGaNナノコラムのマスクパターン依存性2014

    • Author(s)
      水野尚之、加藤嵩裕、上山智、竹内哲也、岩谷素顕、赤崎勇
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] 高キャリア濃度Siドープn型Al0.03Ga0.97N上のAg電極を用いた高反射電極の検討2014

    • Author(s)
      河合俊介、飯田大輔、岩谷素顕、竹内哲也、上山智、赤﨑勇
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] r面サファイア基板上におけるa面GaN成長に関する検討2014

    • Author(s)
      加藤 貴久、水野 尚之、伊藤弘晃、飯田 大輔、藤井高志、福田承生、上山 智、竹内 哲也、岩谷 素顕、赤﨑 勇
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Related Report
      2014 Annual Research Report
  • [Presentation] 窒化物系LED作製のレーザー加工による光取り出し効率向上の検討2014

    • Author(s)
      花井駿、鈴木敦志、北野司、飯田大輔、加藤貴久、岩谷素顕、竹内 哲也、上山智、赤﨑勇
    • Organizer
      電子情報通信学会 電子部品・材料研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-05-29
    • Related Report
      2014 Annual Research Report
  • [Presentation] High sensitivity group III nitride semiconductor based heterostructure field effect transistor type photosensors2013

    • Author(s)
      M. Iwaya, M. Ishiguro, M. Mizuno, K. Ikeda, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Organizer
      The Collaborative Conference on Crystal Growth (3CG)
    • Place of Presentation
      Cuncun, Mexico
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Moth-eye Patterned Sapphire Substrate technology for cost effective high performance LED2013

    • Author(s)
      T. Kondo, T. Kitano, A. Suzuki, M. Mori, K. Naniwae, S. Kamiyama, T. Takeuchi , M. Iwaya, and I. Akasaki
    • Organizer
      JSAP-MRS Joint Symposia
    • Place of Presentation
      京都
    • Related Report
      2013 Annual Research Report
  • [Presentation] Externally high sensitivity group III nitride semiconductor based heterostructure field effect transistor type photosensors2013

    • Author(s)
      M. Ishiguro, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Organizer
      International Conference on Materials and Applications for Sensors and Transducers
    • Place of Presentation
      Prague, Czech Republic
    • Related Report
      2013 Annual Research Report
  • [Presentation] High sensitivity extremely nitride-based heterofield-effect-trans is tor-type photosensors2012

    • Author(s)
      石黒真未
    • Organizer
      The International Workshop on Nitride Semiconductors 2012
    • Place of Presentation
      札幌
    • Year and Date
      2012-10-15
    • Related Report
      2012 Annual Research Report
  • [Presentation] 窒化物半導体を用いた高感度なHFET型光センサー2012

    • Author(s)
      石黒真未
    • Organizer
      第73回応用物理学会講演会
    • Place of Presentation
      松山
    • Year and Date
      2012-09-12
    • Related Report
      2012 Annual Research Report
  • [Presentation] モスアイ加工サファイア基板を用いた窒化物系LEDの性能向上検討

    • Author(s)
      曽和美保子, 北野司, 近藤俊行, 森みどり, 鈴木敦志, 難波江宏一,上山智, 岩谷素顕, 竹内哲也, 赤﨑勇
    • Organizer
      応用物理学会 SC東海地区学術講演会
    • Place of Presentation
      名古屋
    • Related Report
      2013 Annual Research Report

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Published: 2012-04-24   Modified: 2019-07-29  

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