| Budget Amount *help |
¥12,610,000 (Direct Cost: ¥9,700,000、Indirect Cost: ¥2,910,000)
Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2014: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2013: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2012: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
|
|---|
| Outline of Final Research Achievements |
This research analyzed operation of class E amplifier and its family circuits and proposed several improvements which enables low peak switch voltage, low surge voltage, and high efficient operation for wide load range in order to realize on-chip high frequency power supply. Especially, this research project analyzed effect of nonlinear capacitance to the peak switch voltage. This research project proposed circuits which can reduce peak switch voltage of class E amplifier, circuits which can reduce surge voltage at load fluctuations, circuits which can maintain high efficiency at load variations, and driving circuits suitable for GaN HEMT devices. These research achievements were published in journals of IEEE, IEEJ, IEICE, and IJRER.
|
