| Project/Area Number |
24360269
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
Yoshimoto Mamoru 東京工業大学, 総合理工学研究科(研究院), 教授 (20174998)
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| Co-Investigator(Kenkyū-buntansha) |
YODO Tokuo 大阪工業大学, 工学部, 教授 (70288752)
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| Co-Investigator(Renkei-kenkyūsha) |
MATSUDA Akifumi 東京工業大学, 大学院総合理工学研究科, 講師 (80621698)
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| Project Period (FY) |
2012-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥14,950,000 (Direct Cost: ¥11,500,000、Indirect Cost: ¥3,450,000)
Fiscal Year 2014: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2013: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2012: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
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| Keywords | 結晶構造制御 / 一軸圧縮 / 酸化物薄膜 / 固相結晶化 / エピタキシャル成長 / 酸化バナジウム / 酸化モリブデン / 固相結晶成長 / 層状構造 / 酸化物 / 結晶構造 / 組織制御 / 超機能創出 / 表面ナノ修飾基板 / ナノインプリント |
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| Outline of Final Research Achievements |
In this study, the influence of thermal annealing under uniaxial compression on solid-state crystallization of electronic functional oxide thin films such as VOx or MoOx was investigated for exploring the novel functionalities. As a result, it was found that the epitaxial VO2 and epitaxial V2O3 thin films were obtained through annealing under uniaxial compression of 1 MPa and 10-30 MPa, respectively. Diffusion of oxygen atoms along the layered structure of VOx film under uniaxial compression was thought to have an important role for phase-selective solid state crystallization in this process.
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